ON NZQA5V6XV5T1G, NZQA6V2XV5T1G, NZQA6V8XV5T1G Schematic [ru]
NZQA5V6XV5T1G Series
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features
• SOT−553 Package Allows Four Separate Unidirectional
Configurations
• Low Leakage < 1 mA @ 3 V for NZQA5V6XV5T1G
• Breakdown Voltage: 5.6 V − 6.8 V @ 1 mA
• ESD Protection Meeting IEC61000−4−2 − Level 4
• These are Pb−Free Devices
Mechanical Characteristics
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• 100% Lead Free, MSL1 @ 260°C Reflow Temperature
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SOT−553
CASE 463B
PLASTIC
MARKING DIAGRAM
xx MG
G
xx = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
2
5
3
ORDERING INFORMATION
Device Package Shipping
NZQA5V6XV5T1G SOT−553
(Pb−Free)
NZQA5V6XV5T3G SOT−553
(Pb−Free)
NZQA6V2XV5T1G SOT−553
(Pb−Free)
NZQA6V8XV5T1G SOT−553
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
4
†
4000 / Tape & Reel
16000 /
Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 3
1 Publication Order Number:
NZQA5V6XV5T1/D
NZQA5V6XV5T1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
I
V
V
RWM
V
QV
V
Z
I
Z
MAXIMUM RATINGS (T
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
PP
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
Maximum Temperature Coefficient of V
BR
I
Forward Current
F
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
ZK
Maximum Zener Impedance @ I
ZK
F
= 25°C unless otherwise noted)
A
T
ZT
ZK
BR
RWM
VCV
BR
V
RWM
I
I
F
I
V
R
F
I
T
I
PP
Uni−Directional
V
Characteristic Symbol Value Unit
Peak Power Dissipation (8 X 20 ms @ TA = 25°C) (Note 1)
P
Steady State Power − 1 Diode (Note 2) P
Thermal Resistance Junction to Ambient
R
Above 25°C, Derate
Maximum Junction Temperature T
Jmax
Operating Junction and Storage Temperature Range TJ T
ESD Discharge MIL STD 883C − Method 3015−6
V
IEC1000−4−2, Air Discharge
IEC1000−4−2, Contact Discharge
Lead Solder Temperature (10 seconds duration) T
PK
D
q
JA
stg
PP
L
100 W
300 mW
370
2.7
°C/W
mW/°C
150 °C
−55 to +150 °C
16
kV
16
9
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
= 25°C)
A
Typ Capacitance
Device
Device
Marking
Breakdown Voltage
VBR @ 1 mA (Volts)
Min Nom Max V
Leakage Current
IRM @ V
RWM
I
RWM
RM
(mA)
VC Max @ I
PP
@ 0 V Bias
(Note 3)
VF @ IF =
200 mA
VC (V) IPP (A) (pF) (V)
NZQA5V6XV5T1G 56 5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3
NZQA6V2XV5T1G 62 5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3
NZQA6V8XV5T1G 68 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3
1. Non−repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C
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2
Max
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