ON NUP4060AXV6 Schematic [ru]

NUP4060AXV6

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4−Line Transient Voltage
Suppressor Array

This 4−line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over−transient voltage and ESD sensitive
equipment such as cell phones, portables, computers, printers and
other applications. This device features a common cathode design
which protects four independent lines in a single SOT−563 package.

Features

• Protects up to 4 Lines in a Single SOT−563 Package

• ESD Rating: IEC61000−4−2: Level 4

Contact (8 kV), Air (15 kV)

• V

Pin = 16 V Protection

CC

D1, D2, and D3 Pins = 6.8 V Protection

• Low Capacitance (< 7 pF @ 3 V) for D

• This is a Pb−Free Device

Applications

• Hand Held Portable Applications

• USB Interface

• Notebooks, Desktops, Servers

• SIM Card Protection

MAXIMUM RATINGS (T

Symbol

PPK 1 Peak Power Dissipation VCC Diode

T

J

T

STG

T

L

ESD IEC 61000−4−2 Air

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 1.

8x20 msec double exponential waveform,
(Note 1) D

Operating Junction Temperature Range −40 to 125 °C
Storage Temperature Range −55 to 150 °C
Lead Solder Temperature – Maximum

(10 seconds)

IEC 61000−4−2 Contact

= 25°C, unless otherwise specified)

J

Rating Value Unit

, D2, and D

1

, D2, and D

1

3

3

200

20

260 °C

15000

8000

W
W

V

http://onsemi.com

SOT−563 4−LINE TRANSIENT

VOLTAGE SUPPRESSOR

PIN ASSIGNMENT

D

1

1

D

2

2

V

CC

3

6

1

SOT−563

CASE 463A

STYLE 6

MT = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location

ORDERING INFORMATION

Device Package Shipping

NUP4060AXV6T1G SOT−563

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

(Pb−Free)

GND

6

D

5

3

GND

4

MARKING
DIAGRAM

MT MG

G

1

4000/Tape & Ree

†

© Semiconductor Components Industries, LLC, 2007

January , 2007 − Rev. 1

1 Publication Order Number:

NUP4060/D

NUP4060AXV6

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C, unless otherwise specified)

J

Conditions Symbol Min Typ Max Unit

Reverse Working Voltage (D1, D2, and D3) (Note 2) V
Breakdown Voltage (D1, D2, and D3) IT = 1 mA, (Note 3) V
Breakdown Voltage (VCC) IT = 5 mA, (Note 3) V
Reverse Leakage Current (D1, D2, and D3) V

= 3 V I

RWM

Reverse Leakage Current (VCC) VBR = 11 V I
Capacitance (D1, D2, and D3) VR = 3 V, f = 1 MHz (Line to GND) C

2. TVS devices are normally selected according to the working peak reverse voltage (V

or continuous peak operating voltage level.

is measured at pulse test current IT.

3. V

BR

), which should be equal or greater than the DC

RWM

RWM

BR

BR2

R
R

J

− − 5.0 V

6.2 6.8 7.2 V

15.3 16 17.1 V

− 0.01 0.5

− − 0.05

− 7 10 pF

mA
mA

http://onsemi.com

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