ON NL17SZ00DFT2, NL17SZ00XV5T Schematic [ru]

NL17SZ00
Single 2−Input NAND Gate
The NL17SZ00 is a single 2−input NAND Gate in two tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive.
Features
Tiny SOT−353 and SOT−553 Packages
2.7 ns T
at 5 V (typ)
PD
Source/Sink 24 mA at 3.0 V
Over−Voltage Tolerant Inputs
Pin For Pin with NC7SZ00P5X, TC7SZ00FU and TC7SZ00AFE
Chip Complexity: FET s = 20
Designed for 1.65 V to 5.5 V V
Operation
CC
Pb−Free Packages are Available
5
V
CC
4
Y
GND
A
1
B
2
3
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5
1
SOT−353/SC70−5/SC−88A
DF SUFFIX
CASE 419A
L1 = Specific Device Marking M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
5
1
SOT−553
XV5 SUFFIX
CASE 463B
L1 = Specific Device Marking M = Date Code
PIN ASSIGNMENT
MARKING
DIAGRAMS
5
L1 MG
G
1
5
L1 M
1
Figure 1. Pinout (Top View)
A B
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 5
Pin
1 2 3
&
Y
4 5
Function
A B
GND
Y
V
CC
FUNCTION TABLE
Output
Input
A
L
L H H
B
L
H
L
H
Y = AB
Y
H H H L
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
1 Publication Order Number:
NL17SZ00/D
NL17SZ00
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL Moisture Sensitivity Level 1
F
R
ESD ESD Classification Human Body Model (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
3. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
DC Supply Voltage *0.5 to )7.0 V DC Input Voltage *0.5 to )7.0 V DC Output Voltage *0.5 to to VCC + 0.5 V DC Input Diode Current *50 mA DC Output Diode Current *50 mA DC Output Sink Current $50 mA DC Supply Current per Supply Pin $100 mA Storage Temperature Range *65 to )150 °C Lead Temperature, 1 mm from Case for 10 Seconds 260 °C Junction Temperature Under Bias )150 °C Thermal Resistance SOT−353 (Note 1)
SOT−553
Power Dissipation in Still Air at 85°C SOT−353
SOT−553
350 496
186 135
°C/W
mW
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Class Z
Machine Model (Note 3)
Charged Device Model (Note 4)
Class A
N/A
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
V
V
T
tr, t
CC
IN
OUT
A
f
DC Supply Voltage 1.65 5.5 V DC Input Voltage 0 5.5 V DC Output Voltage 0 VCC + 0.5 V Operating Temperature Range *40 )85 °C Input Rise and Fall Time VCC = 3.0 V $0.3 V
V
= 5.0 V $0.5 V
CC
0 0
100
20
ns/V
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2
DC ELECTRICAL CHARACTERISTICS
l
t
l
t
Symbo
V
IH
V
IL
V
OH
V
OL
I
IN
I
CC
Parameter Condition
High−Level Input Voltage 1.65 to 1.95
Low−Level Input Voltage 1.65 to 1.95
High−Level Output Voltage
IN
= V
or V
IL
IH
V
Low−Level Output Voltage
IN
= V
or V
IH
OH
V
IOH = 100 mA
I I
I
OH
I
OH
I
OH
I
OH
IOL = 100 mA
I I I I
Input Leakage Current VIN = VCC or GND 0 to 5.5 $0.1 $1.0 Quiescent Supply Current VIN = VCC or GND 5.5 1 10
= −3 mA
OH
= −8 mA
OH
= −12 mA = −16 mA = −24 mA = −32 mA
I
= 3 mA
OL
I
= 8 mA
OL
= 12 mA
OL
= 16 mA
OL
= 24 mA
OL
= 32 mA
OL
NL17SZ00
V
CC
(V)
2.3 to 5.5
2.3 to 5.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
TA = 255C *405C v TA v 855C
Min Typ Max Min Max
0.75 V
CC
0.7 V
CC
VCC − 0.1
1.55
1.9
2.2
2.4
2.3
3.8
V
CC
1.65
2.1
2.4
2.7
2.5
4.0
0.25 V
0.3 V
CC
CC
0.75 V
CC
0.7 V
CC
VCC − 0.1
1.55
1.9
2.2
2.4
2.3
3.8
0.1
0.08
0.20
0.22
0.28
0.38
0.42
0.24
0.3
0.4
0.4
0.55
0.55
0.25 V
0.3 V
0.1
0.24
0.3
0.4
0.4
0.55
0.55
CC
CC
Uni
V
V
V
V
mA mA
AC ELECTRICAL CHARACTERISTICS t
Symbo
t
PLH
t
PHL
Parameter Condition
Propagation Delay (Figure 3 and 4)
RL = 1 MW, C RL = 1 MW, C RL = 1 MW, C RL = 1 MW, C RL = 500 W, C RL = 1 MW, C RL = 500 W, C
= tF = 3.0 ns
R
= 15 pF
L
= 15 pF
L
= 15 pF
L
= 15 pF
L
= 50 pF
L
= 15 pF
L
= 50 pF
L
V
CC
(V)
TA = 255C *405C v TA v 855C
Min Typ Max Min Max
1.65 2.0 5.4 11.4 2.0 12
1.8 2.0 4.5 9.5 2.0 10.0
2.5 to 0.2 0.8 3.0 6.5 0.8 7.0
3.3 $ 0.3
0.5 2.4 4.5 0.5 4.7
1.5 2.4 5.0 1.5 5.2
5.0 $ 0.5
0.5 2.0 3.9 0.5 4.1
0.8 2.4 4.3 0.8 4.5
Uni
ns
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Unit
C
C
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I power consumption; P
Input Capacitance VCC = 5.5 V, VI = 0 V or V
IN
Power Dissipation Capacitance
PD
(Note 5)
D
= CPD V
2
fin + ICC VCC.
CC
10 MHz, VCC = 3.3 V, VI = 0 V or V 10 MHz, VCC = 5.5 V, VI = 0 V or V
= CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
)
CC(OPR
CC
CC CC
u4 pF
25
pF
30
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