ON NL17SZ00DFT2, NL17SZ00XV5T Schematic [ru]

NL17SZ00

Single 2−Input NAND Gate

The NL17SZ00 is a single 2−input NAND Gate in two tiny footprint
packages. The device performs much as LCX multi−gate products in
speed and drive.

Features

• Tiny SOT−353 and SOT−553 Packages

• 2.7 ns T

at 5 V (typ)

PD

• Source/Sink 24 mA at 3.0 V

• Over−Voltage Tolerant Inputs

• Pin For Pin with NC7SZ00P5X, TC7SZ00FU and TC7SZ00AFE

• Chip Complexity: FET s = 20

• Designed for 1.65 V to 5.5 V V

Operation

CC

• Pb−Free Packages are Available

5

V

CC

4

Y

GND

A

1

B

2

3

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5

1

SOT−353/SC70−5/SC−88A

DF SUFFIX

CASE 419A

L1 = Specific Device Marking
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

5

1

SOT−553

XV5 SUFFIX

CASE 463B

L1 = Specific Device Marking
M = Date Code

PIN ASSIGNMENT

MARKING

DIAGRAMS

5

L1 MG

G

1

5

L1 M

1

Figure 1. Pinout (Top View)

A
B

Figure 2. Logic Symbol

© Semiconductor Components Industries, LLC, 2006

November, 2006 − Rev. 5

Pin

1
2
3

&

Y

4
5

Function

A
B

GND

Y

V

CC

FUNCTION TABLE

Output

Input

A

L

L
H
H

B

L

H

L

H

Y = AB

Y

H
H
H
L

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

1 Publication Order Number:

NL17SZ00/D

NL17SZ00

MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

IN

V

OUT

I

IK

I

OK

I

OUT

I

CC

T

STG

T

L

T

J

q

JA

P

D

MSL Moisture Sensitivity Level 1

F

R

ESD ESD Classification Human Body Model (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.

2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.

3. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.

4. Tested to JESD22−C101−A.

DC Supply Voltage *0.5 to )7.0 V
DC Input Voltage *0.5 to )7.0 V
DC Output Voltage *0.5 to to VCC + 0.5 V
DC Input Diode Current *50 mA
DC Output Diode Current *50 mA
DC Output Sink Current $50 mA
DC Supply Current per Supply Pin $100 mA
Storage Temperature Range *65 to )150 °C
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
Junction Temperature Under Bias )150 °C
Thermal Resistance SOT−353 (Note 1)

SOT−553

Power Dissipation in Still Air at 85°C SOT−353

SOT−553

350
496

186
135

°C/W

mW

Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in

Class Z

Machine Model (Note 3)

Charged Device Model (Note 4)

Class A

N/A

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min Max Unit

V

V

V

T

tr, t

CC

IN

OUT

A

f

DC Supply Voltage 1.65 5.5 V
DC Input Voltage 0 5.5 V
DC Output Voltage 0 VCC + 0.5 V
Operating Temperature Range *40 )85 °C
Input Rise and Fall Time VCC = 3.0 V $0.3 V

V

= 5.0 V $0.5 V

CC

0
0

100

20

ns/V

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DC ELECTRICAL CHARACTERISTICS

l

t

l

t

Symbo

V

IH

V

IL

V

OH

V

OL

I

IN

I

CC

Parameter Condition

High−Level Input Voltage 1.65 to 1.95

Low−Level Input Voltage 1.65 to 1.95

High−Level Output Voltage

IN

= V

or V

IL

IH

V

Low−Level Output Voltage

IN

= V

or V

IH

OH

V

IOH = 100 mA

I
I

I

OH

I

OH

I

OH

I

OH

IOL = 100 mA

I
I
I
I

Input Leakage Current VIN = VCC or GND 0 to 5.5 $0.1 $1.0
Quiescent Supply Current VIN = VCC or GND 5.5 1 10

= −3 mA

OH

= −8 mA

OH

= −12 mA
= −16 mA
= −24 mA
= −32 mA

I

= 3 mA

OL

I

= 8 mA

OL

= 12 mA

OL

= 16 mA

OL

= 24 mA

OL

= 32 mA

OL

NL17SZ00

V

CC

(V)

2.3 to 5.5

2.3 to 5.5

1.65 to 5.5

1.65

2.3

2.7

3.0

3.0

4.5

1.65 to 5.5

1.65

2.3

2.7

3.0

3.0

4.5

TA = 255C *405C v TA v 855C

Min Typ Max Min Max

0.75 V

CC

0.7 V

CC

VCC − 0.1

1.55

1.9

2.2

2.4

2.3

3.8

V

CC

1.65

2.1

2.4

2.7

2.5

4.0

0.25 V

0.3 V

CC

CC

0.75 V

CC

0.7 V

CC

VCC − 0.1

1.55

1.9

2.2

2.4

2.3

3.8

0.1

0.08

0.20

0.22

0.28

0.38

0.42

0.24

0.3

0.4

0.4

0.55

0.55

0.25 V

0.3 V

0.1

0.24

0.3

0.4

0.4

0.55

0.55

CC

CC

Uni

V

V

V

V

mA
mA

AC ELECTRICAL CHARACTERISTICS t

Symbo

t

PLH

t

PHL

Parameter Condition

Propagation Delay
(Figure 3 and 4)

RL = 1 MW, C
RL = 1 MW, C
RL = 1 MW, C
RL = 1 MW, C
RL = 500 W, C
RL = 1 MW, C
RL = 500 W, C

= tF = 3.0 ns

R

= 15 pF

L

= 15 pF

L

= 15 pF

L

= 15 pF

L

= 50 pF

L

= 15 pF

L

= 50 pF

L

V

CC

(V)

TA = 255C *405C v TA v 855C

Min Typ Max Min Max

1.65 2.0 5.4 11.4 2.0 12

1.8 2.0 4.5 9.5 2.0 10.0

2.5 to 0.2 0.8 3.0 6.5 0.8 7.0

3.3 $ 0.3

0.5 2.4 4.5 0.5 4.7

1.5 2.4 5.0 1.5 5.2

5.0 $ 0.5

0.5 2.0 3.9 0.5 4.1

0.8 2.4 4.3 0.8 4.5

Uni

ns

CAPACITIVE CHARACTERISTICS

Symbol Parameter Condition Typical Unit

C

C

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
power consumption; P

Input Capacitance VCC = 5.5 V, VI = 0 V or V

IN

Power Dissipation Capacitance

PD

(Note 5)

D

= CPD  V

2

 fin + ICC  VCC.

CC

10 MHz, VCC = 3.3 V, VI = 0 V or V
10 MHz, VCC = 5.5 V, VI = 0 V or V

= CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic

)

CC(OPR

CC

CC
CC

u4 pF

25

pF

30

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