ON MMBT6517LT1 Schematic [ru]
ON Semiconductor
High Voltage Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Base Current I
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBT6517LT1 = 1Z
CEO
CBO
EBO
B
C
P
D
JA
P
D
JA
stg
350 Vdc
350 Vdc
5.0 Vdc
250 mAdc
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
MMBT6517LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Base Breakdown Voltage
(IC = 100 Adc)
Emitter–Base Breakdown Voltage
(IE = 10 Adc)
Collector Cutoff Current
(VCB = 250 Vdc)
Emitter Cutoff Current
(VEB = 5.0 Vdc)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
1 Publication Order Number:
350 —
350 —
6.0 —
— 50
— 50
MMBT6517LT1/D
Vdc
Vdc
Vdc
nAdc
nAdc
MMBT6517LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted) (Continued)
A
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
C
T
cb
eb
20
30
30
20
15
—
—
—
—
—
—
—
— 2.0
40 200
— 6.0
— 80
—
—
200
200
—
0.30
0.35
0.50
1.0
0.75
0.85
0.90
—
Vdc
Vdc
Vdc
MHz
pF
pF
Figure 1.
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2
MMBT6517LT1
200
100
, DC CURRENT GAIN
FE
h
V, VOLTAGE (VOLTS)
70
50
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
VCE = 10 V
T
= 125°C
J
25°C
-55°C
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
T
= 25°C
J
V
@ IC/IB = 10
BE(sat)
V
@ VCE = 10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
V
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
CE(sat)
@ IC/IB = 5.0
100
70
50
T
= 25°C
30
20
10
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
T
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
IC, COLLECTOR CURRENT (mA)
J
VCE = 20 V
f = 20 MHz
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
Figure 2. Current–Gain — Bandwidth Product
2.5
2.0
1.5
1.0
0.5
R
for V
θVC
0
-0.5
-1.0
-1.5
R
, TEMPERATURE COEFFICIENTS (mV/ C)°
-2.0
V
θ
R
-2.5
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
θVB
I
C
10
I
B
CE(sat)
for V
BE
IC, COLLECTOR CURRENT (mA)
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
Figure 4. Temperature Coefficients
100
70
50
30
20
10
7.0
5.0
C, CAPACITANCE (pF)
3.0
2.0
1.0
C
eb
C
cb
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
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3
T
= 25°C
J
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
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