ON BCW66GLT1G, SBCW66GLT1G Schematic [ru]
BCW66GLT1G,
SBCW66GLT1G
General Purpose Transistor
NPN Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Collector Current − Pulsed I
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
CEO
CBO
EBO
C
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1), T
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
= 25°C
A
= 25°C
A
P
D
R
q
JA
P
D
R
q
JA
stg
45 Vdc
75 Vdc
5.0 Vdc
800 mAdc
1200 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
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SOT−23
(TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
EG MG
G
EG = Specific Device Code
M = Date Code*
G = Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
BCW66GLT1G SOT−23
(Pb−Free)
SBCW66GLT1G SOT−23
(Pb−Free)
BCW66GLT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 5
1 Publication Order Number:
BCW66GLT1/D
BCW66GLT1G, SBCW66GLT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
= 10 mAdc, IB = 0) V
C
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(V
= 45 Vdc, IE = 0)
CE
= 45 Vdc, IE = 0, TA = 150°C)
(V
CE
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) I
ON CHARACTERISTICS
DC Current Gain
(I
= 100 mAdc, VCE = 10 Vdc)
C
= 10 mAdc, VCE = 1.0 Vdc)
(I
C
(I
= 100 mAdc, VCE = 1.0 Vdc)
C
(I
= 500 mAdc, VCE = 2.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I
= 500 mAdc, IB = 50 mAdc)
C
= 100 mAdc, IB = 10 mAdc)
(I
C
Base −Emitter Saturation Voltage
(I
= 500 mAdc, IB = 50 mAdc)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
= 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 0.5 Vdc, IC = 0, f = 1.0 MHz)
EB
Noise Figure
(V
= 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
CE
SWITCHING CHARACTERISTICS
Turn−On Time (I
= IB2 = 15 mAdc) t
B1
Turn−Off Time (IC = 150 mAdc, RL = 150 W)
Symbol Min Typ Max Unit
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
EBO
h
FE
V
CE(sat)
V
BE(sat)
45 − − Vdc
75 − − Vdc
5.0 − − Vdc
−
−
−
−
20
20
nAdc
mAdc
− − 20 nAdc
50
110
160
60
−
−
−
−
−
−
400
−
Vdc
−
−
−
−
0.7
0.3
Vdc
− − 2.0
f
T
C
obo
C
ibo
100 − − MHz
− − 12 pF
− − 80 pF
NF − − 10 dB
on
t
off
− − 100 ns
− − 400 ns
−
1
IC/IB = 10
0.1
TA = 25°C
, COLLECTOR−EMITTER
CE
V
SATURATION VOLTAGE (V)
0.01
TA = 150°C
TA = −55°C
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
TYPICAL CHARACTERISTICS
1.2
IC/IB = 10
1.1
1.0
0.9
TA = −55°C
0.8
0.7
0.6
, BASE−EMITTER
BE(sat)
V
10001001010.1
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2
TA = 25°C
0.5
0.4
SATURATION VOLTAGE (V)
0.3
0.2
Figure 2. Base Emitter Saturation Voltage vs.
TA = 150°C
10001001010.1
Collector Current
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