ON BCW66GLT1G, SBCW66GLT1G Schematic [ru]

BCW66GLT1G,
SBCW66GLT1G

General Purpose Transistor

NPN Silicon

Features

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Pulsed I

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.

CEO

CBO

EBO

C

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1), T
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2) T
Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

Junction and Storage Temperature TJ, T

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

= 25°C

A

= 25°C

A

P

D

R

q

JA

P

D

R

q

JA

stg

45 Vdc

75 Vdc

5.0 Vdc

800 mAdc

1200 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW

mW/°C

mW

mW/°C

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SOT−23

(TO−236)

CASE 318−08

STYLE 6

COLLECTOR

3

1

BASE

2

EMITTER

MARKING DIAGRAM

EG MG

G

EG = Specific Device Code
M = Date Code*
G = Pb−Free Package

(*Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

BCW66GLT1G SOT−23

(Pb−Free)

SBCW66GLT1G SOT−23

(Pb−Free)

BCW66GLT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

3,000/Tape & Reel

3,000/Tape & Reel

10,000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2013

January, 2013 − Rev. 5

1 Publication Order Number:

BCW66GLT1/D

BCW66GLT1G, SBCW66GLT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (I

= 10 mAdc, IB = 0) V

C

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(V

= 45 Vdc, IE = 0)

CE

= 45 Vdc, IE = 0, TA = 150°C)

(V

CE

Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) I

ON CHARACTERISTICS

DC Current Gain

(I

= 100 mAdc, VCE = 10 Vdc)

C

= 10 mAdc, VCE = 1.0 Vdc)

(I

C

(I

= 100 mAdc, VCE = 1.0 Vdc)

C

(I

= 500 mAdc, VCE = 2.0 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= 500 mAdc, IB = 50 mAdc)

C

= 100 mAdc, IB = 10 mAdc)

(I

C

Base −Emitter Saturation Voltage

(I

= 500 mAdc, IB = 50 mAdc)

C

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

= 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 1.0 MHz)

CB

Input Capacitance

(V

= 0.5 Vdc, IC = 0, f = 1.0 MHz)

EB

Noise Figure

(V

= 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)

CE

SWITCHING CHARACTERISTICS

Turn−On Time (I

= IB2 = 15 mAdc) t

B1

Turn−Off Time (IC = 150 mAdc, RL = 150 W)

Symbol Min Typ Max Unit

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CES

EBO

h

FE

V

CE(sat)

V

BE(sat)

45 − − Vdc

75 − − Vdc

5.0 − − Vdc

−

−

−

−

20
20

nAdc
mAdc

− − 20 nAdc

50
110
160

60

−

−

−

−

−

−

400

−

Vdc

−

−

−

−

0.7

0.3

Vdc

− − 2.0

f

T

C

obo

C

ibo

100 − − MHz

− − 12 pF

− − 80 pF

NF − − 10 dB

on

t

off

− − 100 ns

− − 400 ns

−

1

IC/IB = 10

0.1

TA = 25°C

, COLLECTOR−EMITTER

CE

V

SATURATION VOLTAGE (V)

0.01

TA = 150°C

TA = −55°C

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

TYPICAL CHARACTERISTICS

1.2
IC/IB = 10

1.1

1.0

0.9

TA = −55°C

0.8

0.7

0.6

, BASE−EMITTER

BE(sat)

V

10001001010.1

http://onsemi.com

2

TA = 25°C

0.5

0.4

SATURATION VOLTAGE (V)

0.3

0.2

Figure 2. Base Emitter Saturation Voltage vs.

TA = 150°C

10001001010.1

Collector Current

BCW66GLT1G, SBCW66GLT1G

TYPICAL CHARACTERISTICS

1000

TA = 150°C

TA = 25°C

TA = −55°C

100

, DC CURRENT GAIN

FE

h

10

IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

Figure 3. DC Current Gain vs. Collector

1.0
VCE = 2 V

0.9

TA = −55°C

0.8

0.7

TA = 25°C

0.6

Current

VCE = 2 V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

, COLLECTOR−EMITTER

0.4

SATURATION VOLTAGE (V)

CE(sat)

V

0.2

10001001010.10.010.001

0

TA = 25°C

IC = 800 mA500 mA200 mA100 mA

1001010.1

Figure 4. Saturation Region

100

10

C

ibo

C

obo

f = 1 MHz

0.5

0.4

, BASE−EMITTER ON VOLTAGE (V)

TA = 150°C

0.3

0.2

BE(ON)

V

IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)

Figure 5. Base−Emitter Turn−On Voltage vs.

Collector Current

1000

VCE = 2 V
T

= 25°C

A

100

PRODUCT (MHz)

, CURRENT GAIN BANDWIDTH

tau

f

10

IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 7. Current Gain Bandwidth Product vs.

Collector Current

C, CAPACITANCE (pF)

10001001010.1

1

1001010.1

Figure 6. Capacitance

10,000

0.1 ms,

0.01 ms

100101

1000

, COLLECTOR CURRENT (mA)

C

I

10001001010.1

1 s 100 ms 10 ms 1 ms

100

10

Single Pulse Test at TA = 25°C

1

Figure 8. Safe Operating Area

http://onsemi.com

3

A

A1

BCW66GLT1G, SBCW66GLT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

L

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003

D 2.80 2.90 3.04 0.110

E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004

L1

H

E

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10q°°°°

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT

0.95

0.95

0.037

0.9

0.035

0.8

0.031

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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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0.037

SCALE 10:1

2.0

0.079

ǒ

inches

mm

Ǔ

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BCW66GLT1/D