OMNIREL OM6502ST, OM6501ST Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
(IGBT) IN A HERMETIC TO-257AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
OM6501ST
OM6502ST
4 11 R2
Supersedes 2 07 R1
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART IC (Cont.) V
NUMBER @ 90°C, A V V ns °C/W W °C
OM6501ST 5 500 2.8 400 3.8 35 150
OM6502ST 10 500 2.8 400 3.0 42 150
(BR)CESVCE (sat)
(Typ.) Tf(Typ.)
SCHEMATIC MECHANICAL OUTLINE PACKAGE OPTIONS
Collector
123
CEG
Gate
Emitter
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
3.1 - 139
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
qq
JC
P
D
MOD PAK
6 PIN SIP
T
J
3.1
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM6501ST - OM6502ST
PRELIMINARY DATA: OM6501ST
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
(BR)CES
I
CES
I
GES
Parameter - ON
V
GE(th)
V
CE(sat)
V
CE(sat)
Dynamic
g
fs
C
ies
C
oes
C
res
Switching-Resistive Load
T
d(on)
t
r
Switching-Inductive Load
t
r(Volt)
t
f
t
cross
E
off
Collector Emitter 500 V VCE= 0
Breakdown Voltage I
= 250 µA
C
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
Drain Current 1.0 mA V
= 0.8 Max. Rat., VGE= 0
CE
T
= 125°C
C
Gate Emitter Leakage ±100 nA VGE= ±20 V
Current V
CE
= 0 V
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
Collector Emitter 3.0 V VGE= 15 V, IC= 5 A
Saturation Voltage T
= 25°C
C
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 5 A
Saturation Voltage T
= 100°C
C
Forward Transductance 2.0 S VCE= 20 V, IC= 5 A
Input Capacitance 260 pF VGE= 0
Output Capacitance 50 pF VCE= 25 V
Reverse Transfer Capacitance 20 pF f = 1 mHz
Turn-On Time 37 nS VCC= 400 V, IC= 5 A
Rise Time 150 nS VGE= 15 V, Rg= 47
Off Voltage Rise Time .35 µS V
= 400 V, IC= 5 A
CEclamp
Fall Time .81 µS VGE= 15 V, Rg= 100
Cross-Over Time 1.2 µS L = 0.1 mH, Tj= 100°C
Turn-Off Losses .95 mJ
PRELIMINARY DATA: OM6502ST
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V
Collector Emitter 500 V VCE= 0
(BR)CES
Breakdown Voltage I
I
Zero Gate Voltage 0.25 mA VCE= Max. Rat., VGE= 0
CES
Drain Current 1.0 mA V
I
Gate Emitter Leakage ±100 nA VGE= ±20 V
GES
Current V
Parameter - ON
V
Gate Threshold Voltage 2.0 4.0 V VCE= VGE, IC= 250 µA
GE(th)
V
Collector Emitter 3.0 V VGE= 15 V, IC= 10 A
CE(sat)
Saturation Voltage T
V
Collector Emitter 2.8 3.0 V VGE= 15 V, IC= 10 A
CE(sat)
Saturation Voltage T
Dynamic
g
Forward Transductance 2.5 S VCE= 20 V, IC= 10 A
fs
C
Input Capacitance 950 pF VGE= 0
ies
C
Output Capacitance 140 pF VCE= 25 V
oes
C
Reverse Transfer Capacitance 80 pF f = 1 mHz
res
Switching-Resistive Load
T
Turn-On Time 150 nS
d(on)
t
Rise Time 1000 nS VCC= 400 V, IC= 10 A
r
T
Turn-Off Delay Time 700 nS VGE= 15 V, Rg= 100
d(off)
t
Fall Time 1500 nS
f
Switching-Inductive Load
T
Turn-Off Delay Time 1.2 µS V
d(off)
t
Fall Time 1.5 µS VGE= 15 V, Rg= 100
f
t
Cross-Over Time 2.0 µS L = 180 µH, Tj= 100°C
cross
E
Turn-Off Losses 4.0 mJ
off
= 250 µA
C
= 0.8 Max. Rat., VGE= 0
CE
T
= 125°C
C
= 0 V
CE
= 25°C
C
= 100°C
C
= 350 V, IC= 10 A
CEclamp
Loading...