POWER MOSFETS IN HERMETIC ISOLATED
JEDEC TO-254AA SIZE 6 DIE
400V, 500V, N-Channel, Up To 24 Amp
Size 6 MOSFETs, High Energy Capability
FEATURES
• Isolated Hermetic Metal Package
• Size 6 Die, High Energy
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low R
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
DS(on)
OM6025SA
OM6026SA
4 11 R0
MAXIMUM RATINGS
PART NUMBER V
OM6025SA 400 .23 24
OM6026SA 500 .30 22
DS
SCHEMATIC
3.1 - 93
R
DS(on)
ID (Amp)
3.1
OM6025SA - OM6026SA
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
V
DS
V
DGR
ID@ TC= 25°C Continuous Drain Current
I
DM
PD@ TC= 25°C Maximum Power Dissipation 165 165 W
W
(1) (2) Single Pulse Energy
DSS
T
J
T
stg
Lead Temperature (1/8" from case for 5 secs.) 275 275 °C
Note 1: VDD= 50V, ID= as noted
Note 2: Package Pin Limitation ID@ TC= 25°C = 25 Amps
THERMAL RESISTANCE (MAXIMUM) at TA= 25°C
R
thJC
R
thJA
Parameter OM6025SA OM6026SA Units
Drain-Source Voltage 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 400 500 V
Pulsed Drain Current
2
2
24 22 A
92 85 A
Derate Above 25°C Ambient .025 .025 W/°C
Drain To Source @ 25°C 1000 1200 mJ
Operating and
Storage Temperature Range -55 to 150 -55 to 150 °C
Junction-to-Case .76 °C/W
Junction-to-Ambient 40 °C/W Free Air Operation
Derate Above 25°C Case 1.32 W/°C
3.1
3.1 - 94