OMNIREL COM450A, COM350A, COM250A, COM150A Datasheet
3.1 - 1
3.1
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFET IN A TO-254AA PACKAGE
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
DS(on)
• Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25
°
C
COM350A
COM450A
COM150A
COM250A
100V Thru 500V, U p To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
8 09 R0
PART NUMBER V
DS
R
DS(on)
I
D
COM150A 100 V .070 25 A
COM250A 200 V .100 20 A
COM350A 400 V .32 12 A
COM450A 500 V .42 10 A
SCHEMATIC POWER RATING
3.1 - 2
COM150A - COM450A
3.1
ELECTRICAL CHARACTERISTICS: (T
C
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
STATIC P/N COM150A STATIC P/N COM250A
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100 V
VGS= 0,BV
DSS
Drain-Source Breakdown
200 V
VGS= 0,
Voltage I
D
= 250 mA Voltage ID= 250 mA
V
GS(th)
Gate-Threshold Voltage 2. 0 4. 0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Threshold Voltage 2. 0 4. 0 V VDS= VGS, ID= 250 mA
I
GSSF
Gate-Body Leakage Forward 100 nA VGS= +20 V I
GSSF
Gate-Body Leakage Forward 100 nA VGS= + 20 V
I
GSSR
Gate-Body Leakage Reverse - 1 0 0 nA VGS= -20 V I
GSSR
Gate-Body Leakage Reverse -100 nA VGS= - 20 V
I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0 I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0
Current
0.2 1.0 m A
V
DS
= 0.8 Max. Rat., VGS= 0, Current
0.2 1.0 m A
VDS= 0.8 Max. Rat., VGS= 0,
T
C
= 125° C TC= 125° C
I
D(on)
On-State Drain Current
1
35 A VDS 2 V
DS(on)
, VGS= 10 V I
D(on)
On-State Drain Current
1
30 A VDS 2 V
DS(on)
, VGS= 10 V
V
DS(on)
Static Drain-Source On-State
1.1 1.3 V V
GS
= 10 V, ID= 20 A
V
DS(on)
Static Drain-Source On-State
1.36 1.60 V V
GS
= 10 V, ID= 16 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.55 0.07 V
GS
= 10 V, ID= 20 A
R
DS(on)
Static Drain-Source On-State
.085 .100 V
GS
= 10 V, ID= 16 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State
1.0 0.12
VGS= 10 V, ID= 20 A, R
DS(on)
Static Drain-Source On-State
0.15 0.18
VGS= 10 V, ID= 16 A,
Resistance
1
TC= 125 C Resistance
1
TC= 125 C
DYNAMIC DYNAMIC
gfsForward Transductance
1
9.0 S (W) VDS 2 V
DS(on)
, ID= 20 A gfsForward Transductance
1
10.0 S (W ) VDS 2 V
DS(on)
, ID= 16 A
C
iss
Input Capacitance 2700 pF VGS= 0 C
iss
Input Capacitance 2400 pF VGS= 0
C
oss
Output Capacitance 1300 pF VDS= 25 V C
oss
Output Capacitance 600 pF VDS= 25 V
C
rss
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
Reverse Transfer Capacitance 250 pF f = 1 MHz
t
d(on)
Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t
d(on)
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
t
r
Rise Time 45 ns Rg= 5.0 W , VG= 10V trRise Time 60 ns Rg= 5.0 W ,VGS= 10V
t
d(off)
Turn-Off Delay Time 100 ns t
d(off)
Turn-Off Delay Time 85 ns
t
f
Fall Time 50 ns tfFall Time 38 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current
- 40A
Modified MOSPOWER I
S
Continuous Source Current
- 30A
Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
ISMSource Current
1
- 160 A
the integral P-N I
SM
Source Current
1
- 120 A
the integral P-N
(Body Diode) Junction rectifier.
(Body Diode) Junction rectifier.
VSDDiode Forward Voltage
1
- 2.5V TC= 25 C , IS= -40 A, VGS= 0 VSDDiode Forward Voltage
1
- 2VTC= 25 C , IS= -30 A, VGS= 0
t
rr
Reverse Recovery Time 400 ns
T
J
= 150 C , IF= IS,
t
rr
Reverse Recovery Time 350 ns
T
J
= 150 C , IF= IS,
dl
F
/ds = 100 A/ms dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
(W )
(W )
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