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COM240T
Datasheet
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OMNIREL COM440T, COM340T, COM240T, COM140T Datasheet

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3.1 - 1
3.1
100V Thru 500V, Up To 14 Amp, N-Channel MOSFETs In Hermetic Metal Package
8 09 R0
(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE
COM340T COM440T
COM140T COM240T
DS
R
DS(on)
I
D(MAX)
COM140T 100V .12 14A COM240T 200V .21 14A COM340T 400V .59 10A COM440T 500V .90 7A
SCHEMATIC CONNECTION DIAGRAM
123
1. GATE
2. DRAIN
3. SOURCE
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
DS(on)
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOS­FET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in appli­cations such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
3.1 - 2
COM140T - COM440T
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C
= 25° unless otherwise noted
STATIC P/N COM140T STATIC P/N COM240T
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BV
DSS
Drain-Source Breakdown 100 V VGS= 0, B V
DSS
Drain-Source Breakdown 200 V VGS= 0,
Voltage I
D
= 250 mA Voltage ID= 250 mA
V
GS(th)
Gate-Threshold Voltage 2. 0 4. 0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Threshold Voltage 2. 0 4.0 V VDS= V
GS,ID
= 250 mA
I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V
I
GSSR
Gate-Body Leakage Reverse -100 n A VGS= - 20 V I
GSSR
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0 I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0
Current 0.2 1.0 m A V
DS
= 0.8 Max. Rat., VGS= 0 , Current 0.2 1.0 m A VDS= 0.8 Max. Rat., VGS= 0,
T
C
= 125° C TC= 125° C
I
D(on)
On-State Drain Current
1
14 A VDS 2 V
DS(on)
, VGS= 10 V I
D(on)
On-State Drain Current
1
14 A VDS 2 V
DS(on)
, VGS= 10 V
V
DS(on)
Static Drain-Source On-State 1.40 1.73 V VGS= 10 V, ID= 15 A V
DS(on)
Static Drain-Source On-State 1.8 2. 1 V VGS= 10 V, ID= 10 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State .1 2 VGS= 10 V, ID= 15 A R
DS(on)
Static Drain-Source On-State 0.21 VGS= 10 V, ID= 10 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State .2 2 VGS= 10 V, ID= 15 A, R
DS(on)
Static Drain-Source On-State 0.41 VGS= 10 V, ID= 10 A,
Resistance
1
TC= 125 C Resistance
1
TC= 125 C
DYNAMIC DYNAMIC
gfsForward Transductance
1
10 S(W ) VDS 2 V
DS(on)
, ID= 15 A gfsForward Transductance
1
6.0 S (W) VDS 2 V
DS(on)
, ID= 10 A
C
iss
Input Capacitance 1275 pF VGS= 0 C
iss
Input Capacitance 1000 pF VGS= 0
C
oss
Output Capacitance 550 pF VDS= 25 V C
oss
Output Capacitance 250 pF VDS= 25 V
C
rss
Reverse Transfer Capacitance 160 pF f = 1 MHz C
rss
Reverse Transfer Capacitance 100 pF f = 1 MHz
T
d(on)
Turn-On Delay Time 16 ns VDD= 30 V, ID@5 A T
d(on)
Turn-On Delay Time 17 ns VDD=75 V, ID@ 18 A
t
r
Rise Time 19 ns Rg= 5 W , VGS=10 V trRise Time 52 ns Rg=5 W , VGS= 10 V
T
d(off)
Turn-Off Delay Time 42 ns T
d(off)
Turn-Off Delay Time 36 ns
t
f
Fall Time 24 ns tfFall Time 30 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current - 2 7 A Modified MOSPOWER ISContinuous Source Current - 1 8 A Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
ISMSource Current
1
- 108 A the integral P-N ISMSource Current
1
- 72 A the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier .
VSDDiode Forward Voltage
1
- 2.0V TC= 25 C, IS= -24 A, VGS= 0 VSDDiode Forward Voltage
1
-1.5 V TC= 25 C, IS= -18 A, VGS= 0
t
rr
Reverse Recovery Time 200 ns TJ= 150 C,IF= IS,t
rr
Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,
dl
F
/ds = 100 A/ms dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(MOSFET) switching times are essentially independent of operating temperature.
(MOSFET) switching times are essentially independent of operating temperature.
G
D
S
G
D
S
(W)
(W)
3.1 - 2
COM140T - COM440T
2
3.1
ELECTRICAL CHARACTERISTICS: T
C
= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted
STATIC P/N COM340T STATIC P/N COM440T
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BV
DSS
Drain-Source Breakdown 400 V VGS= 0, B V
DSS
Drain-Source Breakdown 500 V VGS= 0,
Voltage I
D
= 250 mA Voltage ID= 250 mA
V
GS(th)
Gate-Threshold Voltage 2. 0 4. 0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Threshold Voltage 2. 0 4.0 V VDS= V
GS,ID
= 250 mA
I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V
I
GSSR
Gate-Body Leakage Reverse -100 n A VGS= - 20 V I
GSSR
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0 I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0
Current 0.2 1.0 m A V
DS
= 0.8 Max. Rat., VGS= 0 , Current 0.2 1.0 m A VDS= 0.8 Max. Rat., VGS= 0,
T
C
= 125° C TC= 125° C
I
D(on)
On-State Drain Current
1
10 A VDS 2 V
DS(on)
, VGS= 10 V I
D(on)
On-State Drain Current
1
4.5 A VDS 2 V
DS(on)
, VGS= 10 V
V
DS(on)
Static Drain-Source On-State 2.5 2.9 V VGS= 10 V, ID= 5 A V
DS(on)
Static Drain-Source On-State 3.2 3.52 V VGS= 10 V, ID= 4 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State 0.59 VGS= 10 V, ID= 5 A R
DS(on)
Static Drain-Source On-State 0.90 VGS= 10 V, ID= 4 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State 1. 2 VGS= 10 V, ID= 5 A, R
DS(on)
Static Drain-Source On-State 1.8 VGS= 10 V, ID= 4 A,
Resistance
1
TC= 125 C Resistance
1
TC= 125 C
DYNAMIC DYNAMIC
gfsForward Transductance
1
4.0 4.4 S (W ) VDS 2 V
DS(on)
, ID= 5 A gfsForward Transductance
1
4.0 4.8 S (W) VDS 2 V
DS(on)
, ID= 4 A
C
iss
Input Capacitance 1150 pF VGS= 0 C
iss
Input Capacitance 1225 pF VGS= 0
C
oss
Output Capacitance 165 pF VDS= 25 V C
oss
Output Capacitance 200 pF VDS= 25 V
C
rss
Reverse Transfer Capacitance 70 pF f = 1 MHz C
rss
Reverse Transfer Capacitance 85 pF f = 1 MHz
T
d(on)
Turn-On Delay Time 17 ns VDD= 175 V, ID= 5 A T
d(on)
Turn-On Delay Time 17 ns VDD= 200 V, ID= 4 A
t
r
Rise Time 12 ns Rg= 5 W , VDS=10V trRise Time 5 ns Rg= 5 W , VDS=10 V
T
d(off)
Turn-Off Delay Time 45 ns T
d(off)
Turn-Off Delay Time 42 ns
t
f
Fall Time 30 ns tfFall Time 14 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current - 1 0 A Modified MOSPOWER ISContinuous Source Current - 8AModified MOSPOWER
(Body Diode) symbol showing (Body Diode)
symbol showing
ISMSource Current
1
- 40 A the integral P-N ISMSource Current
1
- 32 A the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier .
VSDDiode Forward Voltage
1
- 2VTC= 25 C, IS= -10 A, VGS= 0 VSDDiode Forward Voltage
1
- 2VTC= 25 C, IS= -18 A, VGS= 0
t
rr
Reverse Recovery Time 530 ns TJ= 150 C,IF= IS,trrReverse Recovery Time 700 ns TJ= 150 C,IF= IS,
dl
F
/ds = 100 A/ms dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(MOSFET) switching times are essentially independent of operating temperature.
G
D
S
G
D
S
(W)
(W)
COM140T - COM440T
3.1
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter COM140T COM240T COM340T COM440T Units
V
DS
Drain-Source Voltage 100 200 400 500 V
V
DGR
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V
ID@ TC= 25°C Continuous Drain Current
2
± 14 ± 14 ± 10 ± 8 A
ID@ TC= 100°C Continuous Drain Current
2
± 14 ± 11 ± 6 ± 5 A
I
DM
Pulsed Drain Current
1
± 56 ± 56 ± 40 ± 32 A
V
GS
Gate-Source Voltage ± 20 ± 20 ± 20 ± 2 0 V PD@ TC= 25°C Maximum Power Dissipation 125 125 125 125 W PD@ TC= 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor 1. 0 1.0 1. 0 1.0 W/°C Junction To Ambient Linear Derating Factor .015 .015 .015 .015 W/°C T
J
Operating and T
stg
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
Junction-to-Case 1.00 °C/W
R
thJA
Junction-to-Ambient 65 °C/W Free Air Operation
POWER DERATING MECHANICAL OUTLINE
TO-257
.430 .410
.200 .190
.038 MAX.
.005
.120 TYP.
.537 .527
.665 .645
.420 .410
.150 .140
.750 .500
.100 TYP.
.035 .025
.045 .035
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