OMNIREL COM440T, COM340T, COM240T, COM140T Datasheet
3.1 - 1
3.1
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFETs In Hermetic Metal Package
8 09 R0
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFETS IN TO-257AA PACKAGE
COM340T
COM440T
COM140T
COM240T
PART NUMBER V
DS
R
DS(on)
I
D(MAX)
COM140T 100V .12 14A
COM240T 200V .21 14A
COM340T 400V .59 10A
COM440T 500V .90 7A
SCHEMATIC CONNECTION DIAGRAM
123
1. GATE
2. DRAIN
3. SOURCE
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
DS(on)
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements
where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
3.1 - 2
COM140T - COM440T
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C
= 25° unless otherwise noted
STATIC P/N COM140T STATIC P/N COM240T
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown 100 V VGS= 0, B V
DSS
Drain-Source Breakdown 200 V VGS= 0,
Voltage I
D
= 250 mA Voltage ID= 250 mA
V
GS(th)
Gate-Threshold Voltage 2. 0 4. 0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Threshold Voltage 2. 0 4.0 V VDS= V
GS,ID
= 250 mA
I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V I
GSSF
Gate-Body Leakage Forward 100 nA VGS= 20 V
I
GSSR
Gate-Body Leakage Reverse -100 n A VGS= - 20 V I
GSSR
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0 I
DSS
Zero Gate Voltage Drain 0. 1 0.25 m A VDS= Max. Rat., VGS= 0
Current 0.2 1.0 m A V
DS
= 0.8 Max. Rat., VGS= 0 , Current 0.2 1.0 m A VDS= 0.8 Max. Rat., VGS= 0,
T
C
= 125° C TC= 125° C
I
D(on)
On-State Drain Current
1
14 A VDS 2 V
DS(on)
, VGS= 10 V I
D(on)
On-State Drain Current
1
14 A VDS 2 V
DS(on)
, VGS= 10 V
V
DS(on)
Static Drain-Source On-State 1.40 1.73 V VGS= 10 V, ID= 15 A V
DS(on)
Static Drain-Source On-State 1.8 2. 1 V VGS= 10 V, ID= 10 A
Voltage
1
Voltage
1
R
DS(on)
Static Drain-Source On-State .1 2 VGS= 10 V, ID= 15 A R
DS(on)
Static Drain-Source On-State 0.21 VGS= 10 V, ID= 10 A
Resistance
1
Resistance
1
R
DS(on)
Static Drain-Source On-State .2 2 VGS= 10 V, ID= 15 A, R
DS(on)
Static Drain-Source On-State 0.41 VGS= 10 V, ID= 10 A,
Resistance
1
TC= 125 C Resistance
1
TC= 125 C
DYNAMIC DYNAMIC
gfsForward Transductance
1
10 S(W ) VDS 2 V
DS(on)
, ID= 15 A gfsForward Transductance
1
6.0 S (W) VDS 2 V
DS(on)
, ID= 10 A
C
iss
Input Capacitance 1275 pF VGS= 0 C
iss
Input Capacitance 1000 pF VGS= 0
C
oss
Output Capacitance 550 pF VDS= 25 V C
oss
Output Capacitance 250 pF VDS= 25 V
C
rss
Reverse Transfer Capacitance 160 pF f = 1 MHz C
rss
Reverse Transfer Capacitance 100 pF f = 1 MHz
T
d(on)
Turn-On Delay Time 16 ns VDD= 30 V, ID@5 A T
d(on)
Turn-On Delay Time 17 ns VDD=75 V, ID@ 18 A
t
r
Rise Time 19 ns Rg= 5 W , VGS=10 V trRise Time 52 ns Rg=5 W , VGS= 10 V
T
d(off)
Turn-Off Delay Time 42 ns T
d(off)
Turn-Off Delay Time 36 ns
t
f
Fall Time 24 ns tfFall Time 30 ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
ISContinuous Source Current - 2 7 A Modified MOSPOWER ISContinuous Source Current - 1 8 A Modified MOSPOWER
(Body Diode) symbol showing (Body Diode) symbol showing
ISMSource Current
1
- 108 A the integral P-N ISMSource Current
1
- 72 A the integral P-N
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier .
VSDDiode Forward Voltage
1
- 2.0V TC= 25 C, IS= -24 A, VGS= 0 VSDDiode Forward Voltage
1
-1.5 V TC= 25 C, IS= -18 A, VGS= 0
t
rr
Reverse Recovery Time 200 ns TJ= 150 C,IF= IS,t
rr
Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,
dl
F
/ds = 100 A/ms dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(W)
(W)
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