OMNIREL COM450A, COM350A, COM250A, COM150A Datasheet

COM150A COM350A

COM250A COM450A

(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFET IN A TO-254AA PACKAGE

100V Thru 500V, Up To 25 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

•Isolated Hermetic Metal Package

•Fast Switching

•Low RDS(on)

•Standard Off-The-Shelf

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS @ 25°C

PART NUMBER

VD S

RDS(on)

ID

COM150A

100 V

.070

25 A

COM250A

200 V

.100

20 A

3.1

COM350A

400 V

.32

12 A

COM450A

500 V

.42

10 A

S C H E M ATIC

POWER

RATING

8 09 R0	3.1- 1

2 -1.3

1.3

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM150A

Parameter		Min.	Typ.	Max.	Units	Test Conditions
BVDSS	Drain-Source Breakdown	100			V	VG S =0,
	Voltage					ID = 250 mA
VGS(th)	Gate-Threshold Voltage	2.0		4.0	V	VD S = VG S,ID = 250 mA
IGSSF	Gate-Body Leakage Forward			100	nA	VG S = +20 V
IGSSR	Gate-Body Leakage Reverse			- 100	nA	VG S = -20 V
IDSS	Zero Gate Voltage Drain		0.1	0.25	m A	VD S = Max. Rat., VG S = 0
	Current		0.2	1.0	m A	VD S = 0.8 Max. Rat., VG S =0,
						TC = 125° C
ID(on)	On-State Drain Current1	35			A	VD S 2 VDS(on),VG S = 10 V
VDS(on)	Static Drain-Source On-State		1.1	1.3	V	VG S = 10 V, ID = 20 A
	Voltage1
RDS(on)	Static Drain-Source On-State		0.55	0.07		VG S = 10 V, ID = 20 A
	Resistance1
RDS(on)	Static Drain-Source On-State		1.0	0.12		VG S = 10 V, ID = 20 A,
	Resistance1					TC = 125 C

DYNAMIC

gfs	Forward Transductance1	9.0			S)(W)(W	VD S 2 VDS(on),ID = 20 A
Ciss	Input Capacitance		2700		pF	VG S = 0
Coss	Output Capacitance		1300		pF	VD S = 25 V
Crss	Reverse Transfer Capacitance		470		pF	f = 1 MHz
td(on)	Turn-On Delay Time		28		ns	VD D = 30 V, ID @ 20 A
tr	Rise Time		45		ns	Rg = 5.0 W,VG = 10V
td(off)	Turn-Off Delay Time		100		ns	(MOSFET switching times are
						essentially independent of
tf	Fall Time		50		ns	operating temperature.)

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N COM250A

Parameter		Min.	Typ.	Max.	Units	Test Conditions
BVDSS	Drain-Source Breakdown	200			V	VG S =0,
	Voltage					ID = 250 mA
VGS(th)	Gate-Threshold Voltage	2.0		4.0	V	VD S = VG S,ID = 250 mA
IGSSF	Gate-Body Leakage Forward			100	nA	VG S = + 20 V
IGSSR	Gate-Body Leakage Reverse			-100	nA	VG S = - 20 V
IDSS	Zero Gate Voltage Drain		0.1	0.25	m A	VD S = Max. Rat., VG S = 0
	Current		0.2	1.0	m A	VD S = 0.8 Max. Rat., VG S =0,
						TC = 125° C
ID(on)	On-State Drain Current1	30			A	VD S 2 VDS(on),VG S = 10 V
VDS(on)	Static Drain-Source On-State		1.36	1.60	V	VG S = 10 V, ID = 16 A
	Voltage1
RDS(on)	Static Drain-Source On-State		.085	.100		VG S = 10 V, ID = 16 A
	Resistance1
RDS(on)	Static Drain-Source On-State		0.15	0.18		VG S = 10 V, ID = 16 A,
	Resistance1					TC = 125 C

DYNAMIC

gfs	Forward Transductance1	10.0			S)(W)(W	VD S 2 VDS(on),ID = 16 A
Ciss	Input Capacitance		2400		pF	VG S = 0
Coss	Output Capacitance		600		pF	VD S = 25 V
Crss	Reverse Transfer Capacitance		250		pF	f = 1 MHz
td(on)	Turn-On Delay Time		25		ns	VD D = 75 V, ID @ 16 A
tr	Rise Time		60		ns	Rg = 5.0 W,VG S = 10V
td(off)	Turn-Off Delay Time		85		ns	(MOSFET switching times are
						essentially independent of
tf	Fall Time		38		ns	operating temperature.)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS	Continuous Source Current					Modified MOSPOWER	D
				-40	A
	(Body Diode)					symbol showing
IS M	Source Current1					G
				- 160	A	the integral P-N
	(Body Diode)					Junction rectifier.	S
VS D	Diode Forward Voltage1			-2.5	V	TC = 25 C,IS = -40 A, VG S = 0
tr	Reverse Recovery Time		400		ns	TJ = 150 C,IF =IS,
						dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width		300msec, Duty Cycle		2%.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS	Continuous Source Current					Modified MOSPOWER	D
				-30	A
	(Body Diode)					symbol showing
IS M	Source Current1					G
				- 120	A	the integral P-N
	(Body Diode)					Junction rectifier.	S
VS D	Diode Forward Voltage1			-2	V	TC = 25 C,IS = -30 A, VG S = 0
tr	Reverse Recovery Time		350		ns	TJ = 150 C,IF =IS,
						dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width		300msec, Duty Cycle		2%.

COM450A - COM150A