COM140T COM340T
COM240T COM440T
(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFETs In Hermetic Metal Package
FEATURES
•Isolated Hermetic Metal Package
•Fast Switching
•Low RDS(on)
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM |
RATINGS @ 25°C |
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PART |
NUMBER |
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V |
D S |
R |
DS(on) |
I |
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D(MAX) |
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COM140T |
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100V |
.12 |
14A |
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COM240T |
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200V |
.21 |
14A |
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3.1 |
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COM340T |
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400V |
.59 |
10A |
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COM440T |
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500V |
.90 |
7A |
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SCHEMATIC |
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CONNECTION DIAGRAM |
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1. GATE
2. DRAIN
3. SOURCE
1 2 3
8 09 R0 |
3.1- 1 |
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2 -1.3
1.3
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N COM140T
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
100 |
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V |
VG S = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VD S = VG S,ID = 250 mA |
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IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VG S = 20 V |
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IG S S R |
Gate-Body Leakage Reverse |
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-100 |
nA |
VG S = - 20 V |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
m A |
VD S = Max. Rat., VG S = 0 |
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Current |
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0.2 |
1.0 |
m A |
VD S = 0.8 Max. Rat., VG S = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
14 |
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A |
VD S 2 VDS(on),VG S = 10 V |
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VDS(on) |
Static Drain-Source On-State |
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1.40 |
1.73 |
V |
VG S = 10 V, ID |
= 15 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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.12 |
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VG S = 10 V, ID |
= 15 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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.22 |
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VG S = 10 V, ID |
= 15 A, |
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Resistance1 |
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TC = 125 C |
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DYNAMIC
gfs |
Forward Transductance1 |
10 |
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S)(W(W) |
VD S 2 VDS(on),ID = 15 A |
Ciss |
Input Capacitance |
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1275 |
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pF |
VG S = 0 |
Coss |
Output Capacitance |
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550 |
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pF |
VD S = 25 V |
Crss |
Reverse Transfer Capacitance |
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160 |
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pF |
f = 1 MHz |
Td(on) |
Turn-On Delay Time |
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16 |
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ns |
VD D = 30 V, ID @5 A |
tr |
Rise Time |
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19 |
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ns |
Rg = 5 W ,VG S =10 V |
Td(off) |
Turn-Off Delay Time |
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42 |
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ns |
(MOSFET) switching times are |
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essentially independent of |
tf |
Fall Time |
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24 |
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ns |
operating temperature. |
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N COM240T
Parameter |
Min. |
Typ. |
Max. |
Units |
Test Conditions |
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BVDSS |
Drain-Source Breakdown |
200 |
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V |
VG S = 0, |
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Voltage |
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ID = 250 mA |
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VGS(th) |
Gate-Threshold Voltage |
2.0 |
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4.0 |
V |
VD S = VG S, ID = 250 mA |
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IGSSF |
Gate-Body Leakage Forward |
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100 |
nA |
VG S = 20 V |
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IG S SR |
Gate-Body Leakage Reverse |
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- 100 |
nA |
VG S = - 20 V |
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IDSS |
Zero Gate Voltage Drain |
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0.1 |
0.25 |
m A |
VD S = Max. Rat., VG S = 0 |
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Current |
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0.2 |
1.0 |
m A |
VD S = 0.8 Max. Rat., VG S = 0, |
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TC = 125° C |
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ID(on) |
On-State Drain Current1 |
14 |
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A |
VD S 2 VDS(on),VG S = 10 V |
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VDS(on) |
Static Drain-Source On-State |
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1.8 |
2.1 |
V |
VG S = 10 V, ID |
= 10 A |
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Voltage1 |
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RDS(on) |
Static Drain-Source On-State |
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0.21 |
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VG S = 10 V, ID |
= 10 A |
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Resistance1 |
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RDS(on) |
Static Drain-Source On-State |
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0.41 |
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VG S = 10 V, ID |
= 10 A, |
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Resistance1 |
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TC = 125 C |
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DYNAMIC
gfs |
1 |
6.0 |
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(W) |
VD S 2 VDS(on),ID = 10 A |
Forward Transductance |
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S(W ) |
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Ciss |
Input Capacitance |
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1000 |
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pF |
VG S = 0 |
Coss |
Output Capacitance |
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250 |
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pF |
VD S = 25 V |
Crss |
Reverse Transfer Capacitance |
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100 |
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pF |
f = 1 MHz |
Td(on) |
Turn-On Delay Time |
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17 |
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ns |
VD D =75 V, ID @ 18 A |
tr |
Rise Time |
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52 |
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ns |
Rg =5 W ,VG S= 10 V |
Td(off) |
Turn-Off Delay Time |
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36 |
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ns |
(MOSFET) switching times are |
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essentially independent of |
tf |
Fall Time |
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30 |
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ns |
operating temperature. |
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS |
Continuous Source Current |
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- 27 |
A |
Modified MOSPOWER |
D |
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(Body Diode) |
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symbol showing |
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IS M |
Source Current1 |
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- 108 |
A |
the integral P-N |
G |
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(Body Diode) |
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Junction rectifier. |
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S |
VS D |
Diode Forward Voltage1 |
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-2.0 |
V |
TC = 25 C,IS = -24 A, VG S = 0 |
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tr |
Reverse Recovery Time |
200 |
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ns |
TJ = 150 C,IF =IS, |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width |
300msec, Duty Cycle |
2%. |
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BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS |
Continuous Source Current |
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- 18 |
A |
Modified MOSPOWER |
D |
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(Body Diode) |
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symbol showing |
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IS M |
Source Current1 |
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- 72 |
A |
the integral P-N |
G |
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(Body Diode) |
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Junction rectifier. |
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S |
VS D |
Diode Forward Voltage1 |
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-1.5 |
V |
TC = 25 C,IS = -18 A, VG S = 0 |
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tr |
Reverse Recovery Time |
350 |
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ns |
TJ = 150 C,IF =IS, |
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dlF/ds = 100 A/ms |
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1 Pulse Test: Pulse Width |
300msec, Duty Cycle |
2%. |
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COM440T - COM140T
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