OMNI COM440T, COM340T, COM240T, COM140T Datasheet

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COM140T COM340T

COM240T COM440T

(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE

100V Thru 500V, Up To 14 Amp, N-Channel

MOSFETs In Hermetic Metal Package

FEATURES

Isolated Hermetic Metal Package

Fast Switching

Low RDS(on)

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM

RATINGS @ 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PART

NUMBER

 

V

D S

R

DS(on)

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D(MAX)

 

 

 

 

 

COM140T

 

100V

.12

14A

 

 

 

 

 

COM240T

 

200V

.21

14A

 

 

3.1

 

 

 

COM340T

 

400V

.59

10A

 

 

 

 

COM440T

 

500V

.90

7A

 

 

 

 

 

SCHEMATIC

 

 

CONNECTION DIAGRAM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1. GATE

2. DRAIN

3. SOURCE

1 2 3

8 09 R0

3.1- 1

 

OMNI COM440T, COM340T, COM240T, COM140T Datasheet

2 -1.3

1.3

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N COM140T

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

100

 

 

V

VG S = 0,

 

 

Voltage

 

 

 

 

ID = 250 mA

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VD S = VG S,ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VG S = 20 V

 

IG S S R

Gate-Body Leakage Reverse

 

 

-100

nA

VG S = - 20 V

 

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

m A

VD S = Max. Rat., VG S = 0

 

Current

 

0.2

1.0

m A

VD S = 0.8 Max. Rat., VG S = 0,

 

 

 

 

 

 

TC = 125° C

 

ID(on)

On-State Drain Current1

14

 

 

A

VD S 2 VDS(on),VG S = 10 V

VDS(on)

Static Drain-Source On-State

 

1.40

1.73

V

VG S = 10 V, ID

= 15 A

 

Voltage1

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

.12

 

VG S = 10 V, ID

= 15 A

 

Resistance1

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

.22

 

VG S = 10 V, ID

= 15 A,

 

Resistance1

 

 

 

 

TC = 125 C

 

DYNAMIC

gfs

Forward Transductance1

10

 

 

S)(W(W)

VD S 2 VDS(on),ID = 15 A

Ciss

Input Capacitance

 

1275

 

pF

VG S = 0

Coss

Output Capacitance

 

550

 

pF

VD S = 25 V

Crss

Reverse Transfer Capacitance

 

160

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

16

 

ns

VD D = 30 V, ID @5 A

tr

Rise Time

 

19

 

ns

Rg = 5 W ,VG S =10 V

Td(off)

Turn-Off Delay Time

 

42

 

ns

(MOSFET) switching times are

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

24

 

ns

operating temperature.

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N COM240T

Parameter

Min.

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

 

BVDSS

Drain-Source Breakdown

200

 

 

V

VG S = 0,

 

 

Voltage

 

 

 

 

ID = 250 mA

 

VGS(th)

Gate-Threshold Voltage

2.0

 

4.0

V

VD S = VG S, ID = 250 mA

IGSSF

Gate-Body Leakage Forward

 

 

100

nA

VG S = 20 V

 

IG S SR

Gate-Body Leakage Reverse

 

 

- 100

nA

VG S = - 20 V

 

IDSS

Zero Gate Voltage Drain

 

0.1

0.25

m A

VD S = Max. Rat., VG S = 0

 

Current

 

0.2

1.0

m A

VD S = 0.8 Max. Rat., VG S = 0,

 

 

 

 

 

 

TC = 125° C

 

ID(on)

On-State Drain Current1

14

 

 

A

VD S 2 VDS(on),VG S = 10 V

VDS(on)

Static Drain-Source On-State

 

1.8

2.1

V

VG S = 10 V, ID

= 10 A

 

Voltage1

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

0.21

 

VG S = 10 V, ID

= 10 A

 

Resistance1

 

 

 

 

 

 

RDS(on)

Static Drain-Source On-State

 

 

0.41

 

VG S = 10 V, ID

= 10 A,

 

Resistance1

 

 

 

 

TC = 125 C

 

DYNAMIC

gfs

1

6.0

 

 

(W)

VD S 2 VDS(on),ID = 10 A

Forward Transductance

 

 

S(W )

Ciss

Input Capacitance

 

1000

 

pF

VG S = 0

Coss

Output Capacitance

 

250

 

pF

VD S = 25 V

Crss

Reverse Transfer Capacitance

 

100

 

pF

f = 1 MHz

Td(on)

Turn-On Delay Time

 

17

 

ns

VD D =75 V, ID @ 18 A

tr

Rise Time

 

52

 

ns

Rg =5 W ,VG S= 10 V

Td(off)

Turn-Off Delay Time

 

36

 

ns

(MOSFET) switching times are

 

 

 

 

 

 

essentially independent of

tf

Fall Time

 

30

 

ns

operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

- 27

A

Modified MOSPOWER

D

 

 

 

(Body Diode)

 

 

 

 

symbol showing

 

 

IS M

Source Current1

 

 

- 108

A

the integral P-N

G

 

 

(Body Diode)

 

 

 

 

Junction rectifier.

 

S

VS D

Diode Forward Voltage1

 

-2.0

V

TC = 25 C,IS = -24 A, VG S = 0

tr

Reverse Recovery Time

200

 

ns

TJ = 150 C,IF =IS,

 

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle

2%.

 

 

 

 

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

 

- 18

A

Modified MOSPOWER

D

 

 

 

(Body Diode)

 

 

 

 

symbol showing

 

 

IS M

Source Current1

 

 

- 72

A

the integral P-N

G

 

 

(Body Diode)

 

 

 

 

Junction rectifier.

 

S

VS D

Diode Forward Voltage1

 

-1.5

V

TC = 25 C,IS = -18 A, VG S = 0

tr

Reverse Recovery Time

350

 

ns

TJ = 150 C,IF =IS,

 

 

 

 

 

 

 

dlF/ds = 100 A/ms

 

1 Pulse Test: Pulse Width

300msec, Duty Cycle

2%.

 

 

 

 

COM440T - COM140T

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