OKI MSM81C55-5GS-2K, MSM81C55-5JS, MSM81C55-5RS Datasheet

E2O0014-27-X2

¡ Semiconductor MSM81C55-5RS/GS/JS

¡ Semiconductor

This version: Jan. 1998

Previous version: Aug. 1996

MSM81C55-5RS/GS/JS

2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER

GENERAL DESCRIPTION

The MSM81C55-5 has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer. It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected. Featureing a maximum access time of 400 ns, the MSM81C55-5 can be used in an MSM80C85AH system without using wait states. The parallel I/O consists of two 8-bit ports and one 6-bit port (both general purpose). The MSM81C55-5 also contains a 14-bit programmable counter/timer which may be used for sequence-wave generation or terminal count-pulsing.

FEATURES

• High speed and low power achieved with silicon gate CMOS technology

• 256 words x 8bits RAM

• Single power supply, 3 to 6 V

• Completely static operation

• On-chip address latch

• 8-bit programmable I/O ports (port A and B)

• TTL Compatible

• RAM data hold characteristic at 2 V

• 6-bit programmable I/O port (port C)

• 14-bit programmable binary counter/timer

• Multiplexed address/data bus

• Direct interface with MSM80C85AH

• 40-pin Plastic DIP (DIP40-P-600-2.54): (Product name: MSM81C55-5RS)

• 44-pin Plastic QFJ (QFJ44-P-S650-1.27): (Product name: MSM81C55-5JS)

• 44-pin Plastic QFP (QFP44-P-910-0.80-2K): (Product name: MSM81C55-5GS-2K)

FUNCTIONAL BLOCK DIAGRAM

Port A

8

Port B

8

PA

PB

0 - 7

AD

IO/M

0 - 7

CE

ALE

A

256 ¥ 8

Static

RAM

B

RD

WR

RESET

TIMER IN

TIMER OUT

Timer

Port C

C

6

V

CC

GND (0 V)

(+5 V)

PC

0 - 5

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¡ Semiconductor MSM81C55-5RS/GS/JS

PIN CONFIGURATION (TOP VIEW)

40 pin Plastic DIP

TIMEROUT

IO/M

RD

WR

ALE

AD

NC

44 pin Plastic QFP

5

RESET

TIMER IN

PC

PC4PC3V

4443424140

1

2

CE

3

4

5

6

7

0

8

1

9

2

10

3

11 PA

CC

39

2PC1PC0PB7

NC

PC

37

38

363534

1

PC

3

2

PC

4

TIMER IN

TIMER OUT

33

PB

6

PB

32

5

PB

31

4

PB

30

3

PB

29

2

PB

28

1

PB

27

0

26

PA

7

PA

25

6

PA

24

5

23

4

3 4

RESET

5

PC

5

6 7

IO/M

8

CE

9

RD

10

WR

11

ALE AD

12

0

AD

13

1

AD

14

2

AD

15

3

AD

16

4

AD

17

5

AD

18

6

AD

19

7

20

GND

44 pin Plastic QFJ

40

V

CC

39

PC

2

38

PC

1

37

PC

0

PB

36

7

35

PB

6

34

PB

5

33

PB

4

32

PB

3

31

PB

2

30

PB

1

29

PB

0

28

PA

7

27

PA

6

26

PA

5

25

PA

4

24

PA

3

23

PA

2

22

PA

1

21

PA

0

12131415161718

4AD5

AD

AD6AD7GND

CC

V

192021

0

PA

1PA2PA3

PA

22

NC

TIMER OUT

IO/M

RD

WR

NC

ALE

AD

PC 6

5

RESET 5

TIMER IN

PC4PC3NC

4

3

2

1

2PC1PC0PB7

CC

V

PC

43

44

424140

7

8

CE

9

10

11

12

13

14

0

15

1

16

2

17 PA

3

18192021222324

AD

4

NC

7

AD5AD6AD

GND

252627

0

1PA2PA3PA4

PA

28

39

38

37

36

35

34

33

32

31

30

29

PB

6

PB

5

PB

4

PB

3

PB

2

NC

PB

1

PB

0

PA

7

PA

6

5

2/19

¡ Semiconductor MSM81C55-5RS/GS/JS

ABSOLUTE MAXIMUM RATING

Parameter Unit

Power Supply Voltage

Input Voltage

Output Voltage

Storage Temperature

Power Dissipation

Symbol

V

CC

V

IN

V

OUT

T

STG

P

D

Conditions

Referenced

to GND

—

Ta = 25°C

MSM81C55-5RS

MSM81C55-5GS MSM81C55-5JS

–0.5 to +7

–0.5 to V

CC

+0.5

–55 to +150

0.7

1.01.0

OPERATING CONDITION

Rating

Parameter UnitSymbol

Power Supply Voltage

Operating Temperature

V

CC

T

OP

Range

3 to 6

–40 to +85

RECOMMENDED OPERATING CONDITIONS

Parameter UnitSymbol

Power Supply Voltage (81C55)

Operating Temperature (81C55)

"L" Level Input V

"H" Level Input

Supply Voltage (81C55-5)

Operating Temperature (81C55-5)

Min.

V

CC

T

OP

IL

V

IH

V

CC

V

OP

4.5

–40

–0.3

2.2

Typ.

5V

+25

—

54.75 5.25

+25–40 +70

Max.

+85

+0.8

V

CC

5.5

+0.3

V

°C

W

V

°C

V

°C

DC CHARACTERISTICS

Parameter Unit

"L" Level Output Voltage

"H" Level Output Voltage

Input Leak Current

Output Leak Current

Symbol

V

OL

V

OH

I

LI

I

LO

I

= 2 mA

OL

I

= –400 mA

OH

I

= –40 mA

OH

0 £ V

IN

OUT

CE ≥ V

Standby Current

Mean Operating Current

I

CCS

I

CC

≥ V

V

IH

V

£ –0.2 V

IL

Memory cycle time: 1 ms

£ V

CC

£ V

–0.2 V

Condition

CC

= 4.5 V to 5.5 V

V

CC

= –40°C to 85°C

Ta

Min.

—

2.4

4.2

–10

—

Typ. Max.

— 0.45 V

—— V

—10mA

0.1 100 mA

—5mA

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¡ Semiconductor MSM81C55-5RS/GS/JS

AC CHARACTERISTICS

V

= 4.75 V to 5.25 V,

CC

Ta = –40 to +70°C 80C85AH 5MHz I/F

Parameter

V

= 4.5 V to 5.5 V,

CC

Symbol Unit Remarks

Ta = –40 to +80°C 80C85AH 3MHz I/F

Min.

Address/latch Setup Time Latch/address Holt Time

Latch/read (write) Delay Time Read/output Delay Time Address/output Delay Time Latch Width Read/data Bus Floating Time Read (write)/latch Delay Time Read (write) Width Data In/write Setup Time Write/data-in Hold Time Recovery Time Write/port Output Delay Time Port Input/read Setup Time Load capaciRead/port Input Hold Time Strobe/buffer Full Delay Time Strobe Width Strobe/buffer Empty Delay Time Strobe/interrupt-on Delay Time Read/interrupt-off Delay Time Port Input/strobe Setup Time Strobe/port-input Hold Time Strobe/buffer-empty Delay Time Write/buffer-full Delay Time Write/interrupt-off Delay Time Time Output Delay Time Low Time Output Delay Time High Read/data Buse Enable Delay Time Timer Cycle Time Timer Input Rise and Fall Times Timer Input Low Level Time Timer Input High Level Time WRITE to TIMER-IN

for writes which start counting TIMER-IN to WRITE

for writes which start counting

t t

t

RD

t

AD

t

RDF

t

CC

t

DW

t

WD

t

RV

t

WP

t

PR

t

RP

t

SBF

t

SS

t

RBE

t

RDI

t

PSS

t

PHS

t

SBE

t

WBF

t

WI

t

TH

t

RDE

t

CYC

tr, t

t t

t

WT

t

TW

AL

LA

LC

LL

CL

SI

TL

f

1

2

50 30

100

— —

100

0

20 250 150

0

300

—

70

50

— 200

—

50 120

—

10 320

—

80 120

200

0

Max.

— —

— 170 400

— 100

—

— 400

—

— 400

— 400 400 400

—

— 400 400 400 400 400

—

80

—

37 — 30 —

40 — — 140 — 330 70 —

080

20 — 200 — 100 —

25 — 200 —

— 300

50 — 10 —

— 300

150 —

— 300 — 300 — 300 20 —

100 —

— 300 — 300 — 300 — 300 — 300 10 —

320 —

—80 40 — 70 —

200 —

0—

Max.Min.

ns ns

ns ns ns ns ns ns ns ns ns ns ns ns

tance: 150 pF

ns ns ns ns ns ns ns ns ns ns

ns ns ns ns ns ns ns ns ns

ns

Note: Timings are measured wth VL = 0.8 V and VH = 2.2 V for both input and output.

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¡ Semiconductor MSM81C55-5RS/GS/JS

TIMING DIAGRAM

Read Cycle

CE

IO/M

t

AD

t

CC

Data Valid

t

RDF

t

CL

t

RV

AD

0 - 7

ALE

RD

t

LL

t

AL

Address

t

LA

t

RDE

t

RD

t

LC

Write Cycle

IO/M

AD

CE

0 - 7

ALE

WR

t

LL

AL

Address

Data Valid

t

LA

t

LC

t

DW

t

CC

t

CL

t

WD

t

RV

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¡ Semiconductor MSM81C55-5RS/GS/JS

Strobe Input Mode

BF

t

SBF

STROBE

INTR

t

SS

t

SI

t

RDI

t

RBE

RD

Input Data

From Port

Strobe Output Mode

BF

STROBE

INTR

WR

Output Data

To Port

t

PSS

t

WI

t

PHS

t

WBF

t

WP

t

SBE

t

SI

6/19