OKI MSM5718C50-60GS-K, MD5764802-53MC, MSM5718C50-53GS-K, MD5764802-60MC Datasheet

E2G1059-39-21
¡ Semiconductor MSM5718C50/MD5764802
¡ Semiconductor
This version: Feb. 1999
Previous version: Nov. 1998
MSM5718C50/MD5764802
18Mb (2M
¥¥
¥ 9) & 64Mb (8M
¥¥
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.
¥¥
¥ 8) Concurrent RDRAM
¥¥
FEATURES
• Compatible with Base RDRAMs
• 600 MB/s peak transfer rate per RDRAM
• Rambus Signaling Level (RSL) interface
• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
• 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
• 13 active signals require just 32 total pins on the controller interface (including power)
• 3.3 V operation
• Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
• Two or four 2KByte sense amplifiers may be operated as caches for low latency access
• Random access mode enables any burst order at full bandwidth within a page
• Graphics features include write-per-bit and mask-per-bit operations
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)
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PART NUMBERS
The 18- and 64-Megabit RDRAMs are available in horizontal surface mount plastic package
(SHP),
with 533 and 600 MHz clock rate. The part numbers for the various options are shown in Table 1.
Table 1 Part Numbers by Option
533 MHzOptions 600 MHz
18-Megabit SHP 64-Megabit SHP
MSM5718C50-53GS-K MD5764802-53MC
MSM5718C50-60GS-K MD5764802-60MC
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RDRAM PACKAGES AND PINOUTS
RDRAMs are available in horizontal surface mount plastic package (SHP). The package has 32 signal pins and four mechanical pins that provide support for the device. The mechanical pins are located on the opposite side from the signal leads in the SHP.
VDD 1 GND DQ8 GND DQ7
NC (18M) ; VREF (64M)
ADDRESS
VDD DQ6 GND DQ5
VDDA
RXCLK
GNDA
TXCLK
VDD DQ4 GND
COMMAND
SIN
VREF
SOUT
DQ3 GND DQ2 (NC) DQ1 GND DQ0 (NC) GND VDD
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Fig. 1 SHP Pin Numbering
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Table 2 Pin Descriptions
Signal I/O Description
DQ8..DQ0 (BUSDATA [8:0])
I/O
CLK (RXCLK)
CLK (TXCLK)
VREF I COMMAND
(BUSCTRL) ADDRESS
(BUSENABLE)
VDD, VDDA
GND, GNDA
SIN I SOUT O
I
I
I
I
Signal lines for REQ, DIN, and DOUT packets. The REQ packet contains the address field, command field, and other control fields. These are RSL signals.
a
Receive clock. All input packets are aligned to this clock. This is an RSL
a
signal. Transmit clock. DOUT packets are aligned with this clock. This is an RSL
a
signal. Logic threshold reference voltage for RSL signals. Signal line for REQ, RSTRB, RTERM, WSTRB, WTERM, RESET, and CKE
packets. This is an RSL signal. Signal line for COL packets with column addresses. This is an RSL signal.
a
a
+3.3 V power supply. VDDA is a separate analog supply for clock generation in the RDRAM.
Circuit ground. GNDA is a separate analog ground for clock generation in the RDRAM.
Initialization daisy chain input. CMOS levels. Initialization daisy chain output. CMOS levels.
a. RSL stands for Rambus Signaling Levels, a low-voltage-swing, active-low signaling technology.
Mechanical Support Pins
Pin 1
Mechanical Support Pins
Pin 32
Fig. 2 SHP Package
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GENERAL DESCRIPTION
Figure 3 is a block diagram of an RDRAM. At the bottom is a standard DRAM core organized as two or four independent banks, with each bank organized as 512 or 1024 rows, and with each row consisting of 2KBytes of memory cells. One row of a bank may be “activated” at any time (ACTV command) and placed in the 2KByte “page” for the bank. Column accesses (READ and WRITE commands) may be made to this active page.
The smallest block of memory that may be accessed with READ and WRITE commands is an octbyte (eight bytes). Bitmask and bytemask options are available with the WRITE command to allow finer write granularity. There are six control registers that are accessed at initialization time to configure the RDRAM for a particular application.
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SIN
SOUT
RXCLK
ADDRESS
(BUSENABLE)
COMMAND
(BUSCTRL)
DQ8, DQ7,...DQ0
(BUSDATA[8:0])
TXCLK
11
Initialize/Powerdown
REQ RSTRB, RTERM WSTRB, WTERM
88
CKE, RESET
Control Logic
d64/72:
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1
1
1
1
1
1
99
91
1:8 Demux 8:1 Mux
DIN 64/72
DEVICETYPE Register
DEVICEID Register
MODE Register
DOUT
REFROW Register RASINTERVAL DEVICEMFGR Register
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64b for 64M 72b for 18M
d
64/72
d
64/72
64/72
Register
d
1
64/72
MASK Register
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d
d
64/72 ¥ 256 Page
64/72 ¥ 256
64/72 ¥ 256 ¥ 1024
c
Bank 3
c
4 banks per RDRAM for 64M
64/72 ¥ 256 Page
64/72 ¥ 256
64/72 ¥ 256 ¥ 1024
Bank 2
c
64/72 ¥ 256a Page
64/72 ¥ 256
64/72 ¥ 256a ¥ 512
Bank 1
a
256 octbytes per row for 18M
b
512 rows per bank for 18M
64/72 ¥ 256a ¥ 512
Bank 1
a
256 octbytes per row for 64M
b
1024 rows per bank for 64M
64/72 ¥ 256a Page
a
b
64/72 ¥ 256a ¥ 512
64/72 ¥ 256
a
b
Bank 0
b
64/72 ¥ 256
a
¥ 512
b
Bank 0
Fig. 3 18/64-Mbit Concurrent RDRAM Block Diagram
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¡ Semiconductor MSM5718C50/MD5764802
BASIC OPERATION
Figure 4 (a) shows an example of a read transaction. A transaction begins in interval T0 with the transfer of a REQ packet. The REQ packet contains the command (ACTV/READ), a device, bank, and row address (BNK/ROW) of the page to be activated, and the column address (COLa) of the first octbyte to be read from the page.
The selected bank performs the activation of the selected row during T1 and T2 (the t Next, the selected bank reads the selected octbyte during T3 and T4 (the t
interval). A second
CAC
RCD
interval).
command RSTRB (read strobe) is transferred during T3 and causes the first octbyte (DOUTa) to be transferred during T5.
T
9
10
CLK
(RX/TXCLK)
ADDRESS
(BUSENABLE)
COMMAND
(BUSCTRL)
DQ8,..DQ0
(BUSDATA[8:0])
Bank Operation
T
0
ACTV
/READ
REQ
Packet
BNK/ROW
/COL a
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
T
8
COL b COL c COL d
RSTRB RTERM
Next REQ
DOUT a DOUT b DOUT c DOUT d
t
RCD
t
CAC
CLK
(RX/TXCLK)
ADDRESS
(BUSENABLE)
COMMAND
(BUSCTRL)
DQ8,..DQ0
(BUSDATA[8:0])
Bank Operation
(b) BANK ACTIVATE AND RANDOM WRITE CYCLES WITHIN A PAGE
(a) BANK ACTIVATE AND RANDOM READ CYCLES WITHIN A PAGE
T
0
T
1
T
2
T
3
T
4
T
5
T
6
T
7
T
8
COL b COL c COL d
ACTV
/WRITE
REQ
Packet
BNK/ROW
/COL a
WSTRB WTERM
DIN a DIN b DIN c DIN d
t
RCD
Next REQ
T
T
9
10
Fig. 4 Read and Write Transaction Examples
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In this example, three additional octbytes are read from the activated page. These column addresses (COLb, COLc, and COLd) are transferred in T3, T4, and T5, respectively. The data octbytes (DOUTb, DOUTc, and DOUTd) are transferred in T6, T7, and T8, The end of the data octbytes is signaled by a third command RTERM (read terminate) in T6. The next REQ packet may be sent in T9, or in any interval thereafter.
Figure 4 (b) shows an example of a write transaction. The transaction begins in interval T0 with the transfer of a REQ packet. The REQ packet contains, the command (ACTV/WRITE), a device, bank, and row address (BNK/ROW) of the page to be activated, and the column address (COLa) of the first octbyte to be written to the page.
The selected bank performs the activation of the selected row during T1 and T2 (the t
RCD
interval). A second command WSTRB (write strobe) is transferred during T2 and causes the first octbyte (DINa) to be transferred during T3.
In this example, three additional octbytes are written to the activated page. These column addresses (COLb, COLc, and COLd) are transferred in T2, T3, and T4 respectively. The data octbytes (DINb, DINc, and DINd) are transferred in T4, T5, and T6. The end of the data octbytes is signaled by a third command WTERM (write termination) in T6. The next REQ packet may be sent in T7, or in any interval thereafter.
INTERLEAVED TRANSACTIONS
The previous examples showed noninterleaved transactions - the next REQ packet was transferred after the last data octbyte of the current transaction. In an interleaved transaction, the next REQ packet is transferred before the first data octbyte of the current transaction. This permits the row and column access intervals of the next transaction to overlap the data transfer of the current transaction.
Figure 5 shows an example of interleaved read transactions. The first transaction proceeds exactly as the noninterleaved example of Figure 4 (a) (all packets of the first transaction are labeled with “1”). However, in T5 the REQ packet for the second transaction is transferred (all packets of the second transaction are labeled with “2”). The t octbytes and thus increase the effective bandwidth of the RDRAM since there are no unused intervals.
RCD2
and t
intervals overlap the transfer of DOUT1 data
CAC2
A transaction consists of an address transfer phase and a data transfer phase. The REQ packet performs address transfer, and the remaining packets perform data transfer (DOUT, COL, RSTRB, and RTERM in the case of a read transaction). The time interval between the address and data transfer phases of the current transaction may be adjusted to match the data length of the previous transaction (as long as the row and column access times for the current transaction are observed). Thus, there ar e no limits on the types of memory transaction which may be interleaved; any mixing of transaction length and command type is permitted.
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¡ Semiconductor MSM5718C50/MD5764802
CLK
(RX/TXCLK)
ADDRESS
(BUSENABLE)
COMMAND
(BUSCTRL)
DQ8,..DQ0
(BUSDATA[8:0])
Bank Operation
T
T
0
T
1
2
T
T
3
4
COL c0 COL d0 COL b1
ACTV
/READ
RTERM1
RSTRB1
REQ
Packet 1
BNK/ROW
/COL a1
DOUT a0 DOUT b0 DOUT c0 DOUT d0
t
RCD1
Data Transport 0 Overlaps Row/Column Access 1 Data Transport 1 Overlaps Row/Column Access 2
t
CAC1
Fig. 5 Interleaved Read Transaction Example
T
5
T
T
6
T
7
T
8
T
9
10
COL c1 COL d1 COL b2 COL c2
ACTV
/READ
REQ
Packet 2
BNK/ROW
/COL a2
RTERM2
RSTRB2
DOUT a1 DOUT b1 DOUT c1 DOUT d1
t
RCD2
t
CAC2
ACTV
/READ
REQ
Packet 3
BNK/ROW
/COL a3
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¡ Semiconductor MSM5718C50/MD5764802
REQ PACKET (ADDRESS TRANSFER)
An REQ packet initiates a transaction by transferring the address and command information to the RDRAM. Figure 6 shows the format of the REQ packet. Note that each RDRAM wire carries eight bits of information in each t
PACKET
natural granularity with which to illustrate timing relationships. The clock that is actually used by the RDRAM has a period of t times t
CYCLE
.
CYCLE
In the REQ packet, the bits which are gray are reserved, and should be driven with a zero. In particular, the bits in t
CYCLE t6
A35..A3: The address field A35..A3 consumes the greatest number of bits. These are allocated to device, bank, row, and column addressing according to Table 3:
. This is the time required to transfer an octbyte of data and is the
, with information transferred on each clock edge. t
PACKET
is four
and t7 are needed for bus-turn-around during read transactions.
Table 3 A35..A3 Address Fields
Field 18M
COL A10..A3 ROW A19..A11 BNK A20 DEV A35..A21
64M
A10..A3 A20..A11 A22, A21 A35..A23
OP5..OP0: The command field OP5..OP0 specifies the type of transaction that is to be performed, according to Table 4. The OP0 bit selects a read or write transaction, the OP1 bit selects a memory or register space access, and OP5..OP2 select command options. These command options include B in OP2 (see byte masking on page 22). D in OP3 for selecting broadcast operations (see refresh on page
35), and b1, b0 in OP5, OP4 (see bit masking on page 23).
ACTV: This bit specifies activation or precharge/activation of a bank at the beginning of a transaction, and is designated by prepending “ACTV/” or “PRE/ACTV/” to the command.
AUTO: This bit specifies auto-precharge of a bank at the end of the transaction, and is designated by appending “A” to the command.
START: This bit is always set to a one and indicates the beginning of a request to the RDRAM.
REGSEL: This bit is used for accessing registers.
PEND2...PEND0: This field is set to “000” for noninterleaved transactions, and to a nonzero value
for interleaved transactions. This is the number of previous STRB and TERM packets the RDRAM is to skip. Refer to the
Concurrent RDRAM Design Guide
for further details.
M7..M0: This field is used to perform byte masking of the first data octbyte DINa for all memory write transactions (OP1, OP0 = 01). Refer to byte masking on page 22.
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Table 4 Command Encoding
ACTV AUTO
00000X00READ Read 0 0 b1 b0 D B 0 1 WRITE Write 00000110RREG Register Read 0000D111WREG Register Write (D) 01000X00READA Read/AutoPrecharge 0 1 b1 b0 D B 0 1 WRITEA Write/AutoPrecharge (b1, b0, D, B) 10000X00ACTV/READ Activate/Read 1 0 b1 b0 D B 0 1 ACTV/WRITE Activate/Write (b1, b0, D, B) 11000X00ACTV/READA Activate/Read/AutoPrecharge 1 1 b1 b0 D B 0 1 ACTV/WRITEA Activate/Write/AutoPrecharge (b1, b0, D, B) 10000X00PRE/ACTV/READ Precharge/Activate/Read 1 0 b1 b0 D B 0 1 PRE/ACTV/WRITE Precharge/Activate/Write (b1, b0, D, B) 11000X00PRE/ACTV/READA Precharge/Activate/Read/AutoPrecharge 1 1 b1 b0 D B 0 1 PRE/ACTV/WRITEA
OP5 OP4 OP3 OP2 OP1 OP0 Command Description
(b1, b0, B masking and D broadcast options)
Precharge/Activate/Write/AutoPrecharge (b1, b0, D, B)
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¡ Semiconductor MSM5718C50/MD5764802
t
PACKET
CLK
T
T
0
T
1
T
2
3
CLK
(RX/TXCLK)
ADDRESS
(BUSENABLE)
COMMAND
(BUSCTRL)
ACTV
/READ
REQ
Packet
DQ8,..DQ0
(BUSDATA[8:0])
t
CYCLE
t
t
0
t
1
2
t
PACKET
t
BNK/ROW
/COL a
= 4 • t
T
0
3
t
4
CYCLE
t
t
5
t
6
7
ADDRESS
COMMAND
DQ8
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
OP4OP2OP5OP1START
A35A26OP3OP0
A34A25A17A9
A33A24A16A8
A32A23A15A7
A31A22A14A6
ACTV
A30A21A13A5
AUTO
A29A20A12A4
PEND2
A28A19A11A3
PEND1
M7
M6
M5
M4
M3
M2
M1
DQ0
REGSEL
A27A18A10
Fig. 6 REQ Packet Format
PEND0
M0
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¡ Semiconductor MSM5718C50/MD5764802
DATA TRANSFER PACKETS
The next set of packet types are used for data transfer. Their formats are summarized in Figure 7.
As in the REQ packet, eight bits are transferred on each wire during each t
PACKET
interval. The rising and falling edges of the RDRAM clock define the transfer windows for each of these bits. The data transfer packets will align to the t
PACKET
intervals defined by the START bit of the REQ packet by
simply observing the timing rules that are developed in the next few sections of this document.
DIN and DOUT Packets
There are nine wires allocated for the data bytes. These wires are labeled DQ8..DQ0. The eight bytes transferred in a DIN or DOUT packet have 72 bits, which are labeled D0..D63 (on the DQ0..DQ7 wires) and E0..E7 (on the DQ8 wire). The 18Mbit RDRAM have storage cells for the E0..E7 bits. The E0..E7 bits are also used with byte masking operations. This is described in the section on byte masking on page 22.
COL Packet
The column address A10..A3 of the first octbyte of data (DINa or DOUTa) is provided in the REQ packet. The COL packet contains an eight bit field A10..A3, which provides the column address for the second and subsequent data octbytes. The COL packets have a fixed timing relationship with respect to the DIN and DOUT packets to which they correspond. As the DIN and DOUT packets are moved (to accommodate interleaving ), the COL packets move with them.
RSTRB and RTERM Packets
The RSTRB and RTERM packets indicate the beginning and end of the DOUT packets that are transferred during a read transaction. The RSTRB and RTERM packets are each eight bits and consist of a single “1” in an odd t
position, with the other seven positions “0”. Note that when a
CYCLE
transaction transfers a single data octbyte, the RSTRB and RTERM packets will overlay one another. This is permitted and is in fact the reason that each packet consists of a single asserted bit. An example of this case is shown in Figure 14 (a). There will be transaction situations in which the RTERM overlays a RSTRB packet (two octbyte interleaved transaction). Again, this is permitted. The general rule is that the RTERM may overlay any of the other packets on the Command (BUSCTRL) wire, and RSTRB may overlay any other except for a REQ packet.
WSTRB and WTERM Packets
The WSTRB and WTERM packets indicate the beginning and end of the series of DIN packets that are transferred during a write transaction. The WSTRB and WTERM packets are each eight bits and consist of a single “1” in an odd t
position, with the other seven positions “0”. Note that when
CYCLE
a transaction transfers a single data octbyte, the WSTRB and WTERM packets will not overlay one another (unlike the case of a one octbyte read). An example of this case is shown in Figure 14 (b). There will be transaction situations in which the WSTRB overlays a REQ packet (no bank activate). Again, this is permitted. An example of this is shown in Figure 9 (a). The general rule is that the WSTRB may overlay any of the other packets on the Command (BUSCTRL) wire, and WTERM may overlay any other except for a REQ packet.
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CKE PACKET
The average power of the RDRAM can be reduced by using Suspend power mode. This is done by setting the FR field of the MODE register to a zero (the MODE register is shown in Figure 17). A CKE packet must be sent a time t
ahead of each REQ packet (this is shown in interval T0 in Figure 21
CKE
(b)). This causes the RDRAM to transition from Suspend to Enable mode. When the RDRAM has finished the transaction, it returns to Suspend mode. The CKE packet will overlay the RSTRB and RTERM packets when transactions are interleaved. If the FR field is set to a one, CKE packets are not used and the RDRAM remains in Enable mode.
RESET PACKET
The RESET packet is used during initialization. When RESET packets are driven for a time t
RESET
or greater, the RDRAM will assume a known state. Because the RESET packet is limited to this one use, it will not interact with the other packet types. This is illustrated in Figure 21 (a).
PWRUP PACKET
The PWRUP packet is used to cause an RDRAM to transition from Powerdown to Enable mode. This is illustrated in Figure 21 (c).
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