OKI MSM548331TS-K Datasheet

E2L0037-17-Y1
¡ Semiconductor MSM548331
¡ Semiconductor
This version: Jan. 1998
Previous version: Dec. 1996
MSM548331
222,720-Word ¥ 12-Bit Field Memory
DESCRIPTION
The MSM548331 is a 2.7-Mbit, 768 bits ¥ 290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548331s can be cascaded directly without any delay devices between them. Cascading MSM548331s provides larger capacity and longer delay. X serial address input enables random initial address setting of serial access in a page. Other than the random address setting, MSM548331 has several types of address set modes such as line hold, address jump to initial address and line increment. Self refresh function releases the MSM548331 from being applied external refresh control clocks even though it contains dynamic type memory cells. MSM548331 has write mask function or input enable function (IE), and read-data skipping function or output enable function (OE). The MSM548331 is especially designed for digital TVs and VTRs for consumer use and video cameras. The MSM548331 is not designed for high end use in such applications as medical systems, professional graphics systems which require long term picture storage, data storage systems and others.
FEATURES
• 768 ¥ 290 ¥ 12-bit configuration
• Line by line access
• X serial address inputs for random serial initial bit address
• Asynchronous operation
• Serial read and write cycle times Read cycle: 30 ns Write cycle: 30 ns
• Low operating supply voltage: 3.3 V ±0.3 V
• Self-refresh
• Various address reset mode for picture processing
• Write mask function (Input enable control)
• Data skipping function (Output enable control)
• Package:
44-pin 400 mil plastic TSOP (Type II)
(TSOPII44-P-400-0.80-K) (Product : MSM548331TS-K)
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¡ Semiconductor MSM548331
PIN CONFIGURATION (TOP VIEW)
V
SS
DIN5 DIN4 DIN3 DIN2 DIN1 DIN0
RCLK
RXAD
RADE/RX
RE
OE DO0 DO1
V
CC
DO2 DO3
V
SS
DO4 DO5
1 2 3 4 5 6 7 8 9
10
44
DIN6
43
DIN7
42
DIN8
41
DIN9
40
DIN10
39
DIN11
38
WCLK
37
WXAD
36
WADE/RX
35
WR/TR 11RR 34 WE 12RXINC 33 WXINC 13 14 15 16 17 18 19 20 21 22
32 31 30 29 28 27 26 25 24 23
IE
DO11
DO10
V
CC
DO9
DO8
V
SS
DO7
DO6
V
CC
44-Pin Plastic TSOP (
(K Type)
II)
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¡ Semiconductor MSM548331
Pin Name
RCLK Read Port, Serial Read ClockRead Port, X Serial Address Strobes
RE Read Port, Read Enable
DO0 - 11 Read Port, Data Output
RR Read Port, Address Reset Mode Enable
RXINC Read Port, X Address Increment
RADE/RX
RXAD Read Port, X Serial Address Data
OE Output Enable
WCLK Write Port, Serial Write ClockWrite Port, X Serial Address Strobes
WE Write Port, Write Enable
DIN0 - 11 Write Port, Input Data
WR/TR Write Port, Write Data Transfer
WXINC Write Port, X Address Increment
WADE/RX
WXAD Write Port, X Serial Address Data
IE Input Enable
V
CC
V
SS
Read Port, X Address Input Enable
Read Port, X Address Reset
Write Port, Address Reset Mode Enable
Write Port, X Address Input Enable
Write Port, X Address Reset
Power Supply Voltage (3.3 V)
Function
Serial Read/Write CycleAddress Setting Cycle
Ground (0 V)
Note: Same power supply voltage level must be provided to every VCC pin.
Same ground voltage level must be provided to every VSS pin.
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¡ Semiconductor MSM548331
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BLOCK DIAGRAM
WCLK
Refresh Counter
Write Buffer
Write Register
Memory Cell Array
768 ¥ 290 ¥ 12 bits
Read Register
D
OUT
Buffer
RCLK RE OE
12
DIN0 to DIN11
DO0 to DO11
12
WE WCLK IE
Memory
Controller
Read
Address Control
Write
Address Control
RCLK
WADE/RX
RADE/RX
WXAD
RXAD
WR/TR
RR
WXINC
RXINC
V
BB
Generator
X-Address
Decoder
¡ Semiconductor MSM548331
PIN FUNCTION
READ RELATED
RCLK : Read Clock
RCLK is the read control clock input. Synchronized with RCLK's rising edge, serial read access from read ports is executed when both RE and OE are high. The internal counter for the serial read address is incremented automatically on the rising edge of RCLK. In a read address set cycle, all the read address bits which were input from RXAD pin are stored into internal address registers synchronized with RCLK. In this address set cycle, RADE/RX must be held high and RR must be held low. In the read address reset cycle, various read address reset modes can be set synchronously with RCLK. These reset cycles work to replace complicated serial address control which requires many RCLK clocks with a simple reset cycle control requiring only a single RCLK cycle. It greatly facilitates memory access.
RE : Read Enable
RE is a read enable clock input. RE enables or disables both internal read address pointers and data­out buffers. When RE is high, the internal read address pointer is incremented synchronously with RCLK. When RE is low, even if the RCLK is input, the internal read address pointer is not incremented.
OE : Output Enable
OE is an output enable clock input. OE enables or disables data-outs. OE high level enables the outputs. The internal read address pointer is always incremented by cycling RCLK regardless of OE level.
DO0-11 : Data-Outs
DO0-11 are serial data-outs. Data is output synchronously with RCLK when OE is high. The output enable/disable operation through OE input is performed synchronously with OE and asynchronously with RCLK.
RR : Read Reset
RR is a read reset control input. Read address reset modes are defined when RR level is high according to the "FUNCTION TABLE for read".
RXINC : Read X Address Increment
RXINC is a read X address (or line address) increment control input. In the read address reset cycle, defined by RR high, the X address (or line address) is incremented by 1 when RXINC is pulled high with RADE/RX low.
RADE/RX : Read Address Enable/Read X Address Reset Logic Function
RADE/RX is a dual function control input. RADE, one of the two functions of RADE/RX, is a read address enable input. In the read address set cycle, defined by RR high, X address (or line address) input from the RXAD pin are latched into internal read X address register synchronously with RCLK. RX, the second function of RADE/RX, works as an element to set read X address (or line address) reset mode. In an address reset mode cycle, defined by RR high, read X address is reset to 0 when RADE/RX is pulled high with RXINC low.
RXAD : Read X Address
RXAD is a read X address (or line address) input. RXAD specifies the line address. 9 bits of read X address data are input serially from RXAD.
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¡ Semiconductor MSM548331
WRITE RELATED
WCLK : Write Clock
WCLK is a write control clock input. Synchronized with WCLK's rising edge, serial write access into write ports is executed when WE is high and IE is high. According to WCLK clocks, the internal counter for the serial address is incremented automatically. In a write address set cycle, all the write addresses which were input from WXAD are stored into internal address registers synchronously with WCLK. In this address set cycle, WADE/RX must be held high and WR/TR must be held low. In the write address reset cycle, various write address reset modes can be set synchronously with WCLK. These reset cycles replace complicated serial address control with simple reset cycle control which requires only one WCLK cycle. It greatly facilitates memory access.
WE : Write Enable
WE is a write enable clock input. WE enables or disables both internal write address pointers and data-in buffers. When WE is high, the internal write address pointer is incremented synchronously with WCLK. When WE is low, even if WCLK is input, the internal write address pointer is not incremented.
DIN0-11 : Data-Ins
DIN0-11 are serial data-ins. Corresponding data-in-buffers are masked by IE.
WR/TR : Write Reset/Write Transfer
WR/TR is a write reset control input. Write address reset modes are defined when WR/TR level is high according to the "FUNCTION TABLE for write". When the write operation on a line is terminated, be sure to perform a write transfer operation by WR/TR in order to store the written data in the write register to corresponding memory cells.
WXINC : Write X Address Increment
WXINC is a write X address (or line address) increment control input. In the write address reset cycle, defined by WR/TR high, the write X address (or line address) is incremented when WXINC and WADE/RX are high.
WADE/RX : Write Address Enable/Write X Address Reset Logic Function
WADE/RX is a dual functional control input. WADE, one of the two functions of WADE/RX, is a write address enable input. In the write address reset cycle, defined by WR/TR high, X address (or line address) input from WXAD is latched into internal write X address register synchronously with WCLK.
WXAD : Write X Address
WXAD is a write X address (or line address) input. WXAD specifies line address. 9 bits of write X address data are input serially from WXAD.
IE : Input Enable
IE is an input enable which controls the write operation. When IE is high, the input operation is enabled. When IE is low, the write operation is masked. When WE signal is high, and IE low, the internal serial write address pointer is incremented on the rising edge of WCLK without actual write operations. This function facilitates picture in picture function in a TV system.
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¡ Semiconductor MSM548331
OPERATION MODE
Write
1. Write operation Before the write operation begins, X address (or line address) must be input to set the initial bit address for the following serial write access. When WE and IE are high, a set of serial 12­bit -width write data on DIN0-11 is written into write registers attached to the DRAM memory arrays temporarily on the rising edge of WCLK. Following 12-bit-width serial input data is written into the memory locations in the write register designated by an internal write address pointer which is advanced by WCLK. This enables continuous serial write on a line. When write clock WCLK and read clock RCLK are tied together and are controlled by a common clock or CLK, more than two MSM548331s can be cascaded directly without any delay devices between the MSM548331s because the read timing is delayed by one CLK cycle to the write timing. When the write operation on a line is terminated, be sure to perform a write transfer operation by WR/TR in order to store the written data in the write registers to the corresponding memory cells in the DRAM memory arrays.
2. Write address pointer increment operation The write address pointer is incremented synchronously with WCLK when WE is high.
When WE and IE are high, the write operation is enabled. If IE level goes low while WCLK is active, the write operation is halted but the write address pointer will continue to advance. That is, IE enables a write mask function. When WE goes low, the write address pointer stops without WCLK.
Read
1. Read operation Before the read operation begins, the X address (or line address) must be input for setting initial bit address for the following serial read access. When both RE and OE are high, a set of serial 12-bit-width read data on DO0-11 pins is read from read registers attached to DRAM memory arrays on the rising edge of RCLK. Each access time is specified by the rising edges of RCLK.
Relationship between the WE and IE input levels, Write Address pointer, and data input status
WCLK Rise
WE
H
H
L
IE
H
L
Internal Write Address Pointer
Incremented
Stopped
Data Input
Inputted
Not Inputted
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