OKI MSM5116400B-70TS-K, MSM5116400B-60TS-K, MSM5116400B-50TS-L, MSM5116400B-70TS-L, MSM5116400B-60TS-L Datasheet
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¡ Semiconductor MSM5116400B
¡ Semiconductor
E2G0033-17-41
MSM5116400B
4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5116400B is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116400B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word ¥ 4-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400B-xxSJ)
26/24-pin 300 mil plastic TSOP
(TSOPII26/24-P-300-1.27-K)
(TSOPII26/24-P-300-1.27-L)
(Product : MSM5116400B-xxTS-K)
(Product : MSM5116400B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5116400B-50
MSM5116400B-60
MSM5116400B-70
Access Time (Max.)
t
RAC
50 ns
60 ns
70 ns
t
t
AA
CAC
25 ns
30 ns 15 ns 15 ns
35 ns
13 ns
20 ns
t
OEA
13 ns
20 ns
Cycle Time
(Min.)
90 ns
110 ns 495 mW
130 ns
Operating (Max.)
Power Dissipation
Standby (Max.)
550 mW
5.5 mW
440 mW
16M
207
MSM5116400B ¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
1
CC
2DQ1 25 DQ4
3
DQ2
WE CAS WE CAS CAS WE
4
5
RAS OE RAS OE OE RAS
6A11R 21 A9 21 21 6
8A10R 19 A8 19 19 8
9
A0
10
A1
11
A2
12
A3
13
V
CC
26/24-Pin Plastic SOJ 26/24-Pin Plastic TSOP
26 V
24
23
22
18
17
16
15
14
SS
DQ3
A7
A6
A5
A4
V
SS
V
CC
DQ1
DQ2
A11R
A10R
A0
A1
A2
A3
V
CC
10
11
12
13
1
2
3
4
5
6
8
9
26
25
24
23
22
18
17
16
15
14
V
SS
DQ4
DQ3
A9
A8
A7
A6
A5
A4
V
SS
V
SS
DQ4
DQ3
A9
A8
A7
A6
A5
A4
V
SS
26
25
24
23
22
18
17
16
15
14
10
11
12
13
1
V
CC
2
DQ1
DQ2
3
4
5
A11R
A10R
A0
9
A1
A2
A3
V
CC
26/24-Pin Plastic TSOP
(K Type)
(L Type)
16M
Pin Name Function
A0 - A9,
Address Input
A10R, A11R
RAS Row Address Strobe
CAS Column Address Strobe
DQ1 - DQ4 Data Input/Data Output
OE Output Enable
WE Write Enable
V
CC
V
SS
Power Supply (5 V)
Ground (0 V)
Note : The same power supply voltage must be provided to every VCC pin, and the same GND
voltage level must be provided to every VSS pin.
208
¡ Semiconductor MSM5116400B
BLOCK DIAGRAM
A0 - A9
A10R, A11R
V
CC
10
2
RAS
CAS
Address
Address
Counter
Address
Column
Buffers
Internal
Row
Buffers
Timing
Generator
Control Clock
Row
12
De-
coders
Refresh
Drivers
Word
1010
Column
Decoders
Sense
Amplifiers
Memory
Cells
Timing
Generator
Write
Clock
Generator
I/O
4
Selector
WE
OE
Output
4
Buffers
4
Input
4
Buffers
4
4
4
DQ1 - DQ4
On Chip
V
Generator
BB
On Chip
IV
Generator
CC
V
SS
16M
209
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