FEDR27V852E-01-01
1
Semiconductor
This version: Jan. 2001
MR27V852E
524,288–Word ×××× 16–Bit or 1,048,576–Word ×××× 8–Bit
8–Word x 16-Bit or 16–Word x 8-Bit Page Mode One Time PROM
GENERAL DESCRIPTION
The MR27V852E is a 8 Mbit electrically One Time Programmable Read-Only Memory with page mode. Its
configuration can be electrically switched betw een 524,28 8-word × 16-bit and 1,048,576-word × 8-bit by the state
of the BYTE pin. The MR27V852E supports high speed asynchronous read operation using a single 3.3V power
supply.
FEATURES
· 524,288-word × 16-bit/1,048,576-word × 8-bit electrically switchable configuration
· Page size of 8-word x 16-Bit or 16-word x 8-Bit
· +3.3 V power supply
· Access time
Random access mode 100 ns MAX
Page access mode 30 ns MAX
· Operating current 80 mA MAX
· Standby current 50 µA MAX
· Input/Output TTL compatible
· Tri-state output
· Packages:
42-pin plastic DIP (DIP42-P-600-2.54) (Product Name : MR27V852ERA)
42-pin plastic SOJ (SOJ42-P-400-1.27) (Product Name : MR27V852EJA)
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Semiconductor
PIN CONFIGURATION (TOP VIEW)
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
OE
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
SS
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/ V
V
D15/A–1
D7
D14
D6
D13
D5
D12
D4
V
FEDR27V852E-01-01
MR27V852E
1
A18
2
A17
3
A7
4
A6
5
A5
6
A4
7
A3
8
A2
9
A1
10
A0
11
PP
SS
CC
CE
V
OE
D0
D8
D1
D9
D2
D10
D3
D11
12
SS
13
14
15
16
17
18
19
20
21
NC
42
A8
41
A9
40
39
A10
A11
38
A12
37
A13
36
35
A14
A15
34
A16
33
BYTE/ V
32
31
V
D15/A–1
30
D7
29
D14
28
27
D6
D13
26
D5
25
D12
24
23
D4
22
V
PP
SS
CC
42-pin DIP
42-pin SOJ
Pin name Functions
D15/A–1 Data output/Address input
A0 to A18 Address input
D0 to D14 Data output
CE Chip enable
OE Output enable
BYTE/V
V
CC
V
SS
PP
Mode switch/Program power supply voltage
Power supply voltage
GND
NC Non connection
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1
A0
Semiconductor
BLOCK DIAGRAM
FEDR27V852E-01-01
MR27V852E
A–1
× 8/× 16 Switch
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
Address Buffer
CE BYTE/V
OE
CE PGMOE
Memory Cell Matrix
524,288 × 16-Bit or 1,048,576× 8-Bit
Row Decoder
Multiplexer
Output Buffer
Column Decoder
D0 D2 D4 D6 D8 D10 D12 D14
D1 D3 D5 D7 D9 D11 D13 D15
PP
In 8-bit output mode, these pins
are placed in a high-Z state and
pin D15 functions as the A-1
address pin.
FUNCTION TABLE
Mode CE OE BYTE/V
PP
Read (16-Bit) L L H D
Read (8-Bit) L L L D
Output disable L H
Standby H ∗
H
L
H
L
Program L H D
Program inhibit H H Hi–Z
9.75 V 4.0 V
Program verify H L
∗: Don’t Care (H or L)
V
CC
3.3 V
D0 to D7 D8 to D14 D15/A–1
OUT
Hi–Z L/H
Hi–Z
Hi–Z
D
OUT
∗
∗
IN
OUT
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FEDR27V852E-01-01
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Semiconductor
MR27V852E
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Condition Value Unit
Operating temperature under bias Ta 0 to 70 °C
Storage temperature Tstg
Input voltage V
Output voltage V
Power supply voltage V
Program power supply voltage V
Power dissipation per package P
I
O
CC
PP
D
—
–55 to 125 °C
–0.5 to VCC+0.5 V
relative to V
SS
–0.5 to VCC+0.5 V
–0.5 to 5 V
–0.5 to 11.5 V
—1.0W
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter Symbol Condition Min. Typ. Max. Unit
VCC power supply voltage V
VPP power supply voltage V
Input “H” level V
Input “L” level V
CC
PP
IH
IL
VCC = 3.0 to 3.6 V
3.0 — 3.6 V
–0.5 — VCC+0.5 V
2.2 — VCC+0.5∗ V
–0.5∗∗ —0.6V
Voltage is relative to VSS.
∗ : Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.
∗∗ : -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.
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Semiconductor
ELECTRICAL CHARACTERISTICS
DC Characteristics
parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
Output leakage current I
VCC power supply current
(Standby)
V
power supply current
CC
(Read)
VPP power supply current I
Input “H” level V
Input “L” level V
Output “H” level V
Output “L” level V
I
CCSC
I
CCST
I
CCA
LI
LO
PP
IH
IL
OH
OL
FEDR27V852E-01-01
MR27V852E
(VCC = 3.3 V ±0.3 V, Ta = 0 to 70°C)
VI = 0 to V
VO = 0 to V
CE = V
CE = V
CE = VIL, OE = V
CC
CC
CC
IH
IH
tc = 100 ns
VPP = V
CC
—2.2—V
— –0.5∗∗ —0.6V
IOH = –2 mA 2.4 — — V
IOL = 2.1 mA — — 0.4 V
——10µA
——10µA
——50µA
—— 1mΑ
——80mA
——10µA
+0.5∗ V
CC
Voltage is relative to VSS.
∗ : Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.
∗∗ : -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.
AC Characteristics
Parameter Symbol Condition Min. Max. Unit
Address cycle time t
Address access time t
Page cycle time t
Page access time t
CE access time t
OE access time t
Output disable time
Output hold time t
t
t
C
ACC
PC
PAC
CE
OE
CHZ
OHZ
OH
— 100 — ns
CE = OE = V
IL
—30—ns
— — 30 ns
OE = V
IL
CE = V
IL
OE = V
IL
CE = V
IL
CE = OE = V
IL
Measurement conditions
Input signal level--------------------------------
Input timing reference level------------------
Output load --------------------------------------
Output timing reference level----------------
0 V/3 V
0.8 V/2.0 V
100 pF
0.8 V/2.0 V
(VCC = 3.3 V ±0.3 V, Ta = 0 to 70°C)
— 100 ns
— 100 ns
—30ns
030ns
025ns
0—ns
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Semiconductor
Timing Chart (Read Cycle)
Random Access Mode Read Cycle
FEDR27V852E-01-01
MR27V852E
Address
t
CE
CE
t
OE
OE
t
ACC
Dout
Hi-Z
Page Access Mode Read Cycle
A3 to A18
t
C
t
C
Valid Data
t
C
t
OH
t
ACC
t
CHZ
t
OH
t
OHZ
Valid Data
Hi-Z
A-1 to A2 (Byte mode)
A0 to A2 (Word mode)
CE
OE
Dout
Hi-Z
t
ACC
t
PC
t
CE
t
OE
t
PAC
t
PAC
t
PC
t
OH
t
CHZ
t
OHZ
Hi-Z
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Semiconductor
ELECTRICAL CHARACTERISTICS (PROGRAMMING OPERATION)
DC Characteristics
Parameter Symbol Condition Min. Typ. Max. Unit
Input leakage current I
VPP power supply current (Program) I
VCC power supply current I
Input “H” level V
Input “L” level V
Output “H” level V
Output “L” level V
Program voltage V
VCC power supply voltage (Program) V
VCC power supply voltage (Verify1) V
VCC power supply voltage (Verify2) V
LI
PP2
CC
IH
IL
OH
OL
PP
CC
CV1
CV2
VI = VCC+0.5 V — — 10 µA
CE = V
IL
——50mA
———80mA
—3.0—V
— –0.5 — 0.8 V
IOH = –400 µA2.4 — — V
IOL = 2.1 mA — — 0.45 V
— 9.5 9.75 10.0 V
— 3.9 4.0 4.1 V
— 2.9 3.0 3.1 V
— 3.5 3.6 3.7 V
FEDR27V852E-01-01
MR27V852E
(Ta = 25°C ± 5°C)
+0.5 V
CC
Voltage is relative to VSS.
AC Characteristics
(VCC = 4.0 V ±0.1 V, BYTE/VPP = 9.75 V ±0.25 V, Ta = 25°C ±5°C)
Parameter Symbol Condition Min. Typ. Max. Unit
Address set-up time t
OE set-up time t
Data set-up time t
Address hold time t
Data hold time t
Output float delay time from OE t
V
voltage set-up time t
PP
Program pulse width t
Data valid from OE t
Address hold from OE high t
AS
OES
DS
AH
DH
OHZ
VS
PW
OE
AOH
— 100 — — ns
—2——µs
— 100 — — ns
—2——µs
— 100 — — ns
— 0 — 100 ns
—2——µs
— 9 10 11 µs
— — — 100 ns
—0——ns
Pin Check Function
Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer.
Setting up address as following condition call the preprogrammed codes on device outputs.
(VCC = 3.3 V ±0.1 V, CE = VIL, OE = VIL, BYTE/VPP = VIH, Ta = 25°C ±5°C)
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
010101010
101010101
A10 A11 A12 A13 A14 A15 A16 A17 A18
∗
010101001FF00
VH
∗
10101011000FF
VH
Other conditions
∗: VH = 8 V ± 0.25 V
DATA
FFFF
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Semiconductor
Consecutive Programming Waveforms
A0 to A18
FEDR27V852E-01-01
MR27V852E
t
AS
CE
OE
t
DS
D0 to D15
t
VS
BYTE/Vpp
Consecutive Program Verify Waveforms
t
Din
PW
t
AH
High
t
DH
Din
A0 to A18
CE
OE
D0 to D15
BYTE/Vpp
t
ACC
t
OE
High
t
Dout
AHO
t
OHZ
Dout
9.75 V
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Semiconductor
Program and Program Verify Cycle Waveforms
A0 to A18
FEDR27V852E-01-01
MR27V852E
t
AS
t
AHO
CE
t
PW
t
OES
OE
t
OE
t
OHZ
Dout
D0 to D15
BYTE/Vpp
t
OHZ
t
DS
t
DH
Din
9.75 V
Pin Capacitance
(VCC = 3.3 V, Ta = 25°C, f = 1 MHz)
Parameter Symbol Condition Min. Typ. Max. Unit
Input C
BYTE/V
PP
Output C
IN1
C
IN2
OUT
VI = 0 V
VO = 0 V — — 10(12)
——10
— — 120
( ):DIP only
pF
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Semiconductor
Programming/Verify Flow Chart
FEDR27V852E-01-01
MR27V852E
Programming
Bad Insertion
Increment Address
Start
NG
Pin Check
PASS
Address = First Location
V
= 4.0 V
CC
= 9.75 V
V
PP
Program 10 µs
NO
Last Address?
YES
Address = First Location
X = 0
Verify
Start
NG
Pin Check
PASS
Address = First Location
VCC = 3.0 V/VPP = 3.0 V (Verify1)
Verify
NG
PASS
V
= 3.6 V/VPP = 3.6 V (Verify2)
CC
Verify
NG
PASS
Device Passed
Bad Insertion
Device Failed
Increment Address
Verify(One Word)
PASS
NO
Last Address?
YES
= 3.0 V/VPP = 3.0 V (Verify1)
V
CC
Verify
PASS
Device Passed
NG
NG
Device Failed
X = X+1
YES
X = 2?
NO
Program 10 µs
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DIP42-P-600-2.54
Package material Epoxy resin
Lead frame material 42 alloy
Pin treatment
Solder plating (≥5µm)
Package weight (g) 6.20 TYP.
5
Rev. No./Last Revised 2/Dec. 11, 1996
Semiconductor
PACKAGE DIMENSIONS
FEDR27V852E-01-01
MR27V852E
(Unit: mm)
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SOJ42-P-400-1.27
Mirror finish
Package material Epoxy resin
Lead frame material 42 alloy
Pin treatment
Solder plating (≥5µm)
Package weight (g) 1.86 TYP.
5
Rev. No./Last Revised 5/Dec. 5, 1996
Semiconductor
FEDR27V852E-01-01
MR27V852E
(Unit: mm)
Notes for Mounting the Surface Mount Type Package
The surface mount type packages are very susceptible to heat in reflow mounting and humidity
absorbed in storage.
Therefore, before you perfor m reflow m ounting, c ontac t Ok i’s res ponsibl e s ales per son f or the pro duct
name, package name, pin n umber, package code and desired m ounting conditions (reflow method,
temperature and times).
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FEDR27V852E-01-01
1
Semiconductor
MR27V852E
NOTICE
1. The information contained herein can change without notice owing to produ ct and/or technical improvements.
Before using the product, please make sure that the information being referred to is up-to-date.
2. The outline of action and examples for application circuits described herein have been chosen as an
explanation for the standard action an d performan ce of the product. Wh en planning to use t he product, pleas e
ensure that the external conditions are reflected in the actual circuit, assembly, and program designs.
3. When designing your product, please use our product below the specified maximum ratings and within the
specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating
temperature.
4. Oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected operation
resulting from misuse, neglect, improper installation, repair, alteration or accident, improper handling, or
unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the s pecified
maximum ratings or operation outside the specified operating range.
5. Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is
granted by us in connection with the use of the product and/ or the information and draw ings contained h erein.
No responsibility is assumed by us for any infringement of a third party’s right which may result from the use
thereof.
6. The products listed in this document are intended for use in general electronics equipment for commercial
applications (e.g., office automation, communication equipment, measurement equipment, consumer
electronics, etc.). These products are not authorized for u s e in any system or application that requ ires s pecial
or enhanced quality and reliability characteristics nor in any system or applicatio n where the failure of s uch
system or application may result in the loss or damage of property, or death or injury to humans.
Such applications include, but are not limited to, traf fic and automotive equipment, s afety devices, aerospace
equipment, nuclear power control, medical equipment, and life-support systems.
7. Certain products in this document may need government approval before they can be exported to particular
countries. The purchaser assumes the responsibility of determining the legality of export of these products
and will take appropriate and necessary steps at their own expense for these.
8. No part of the contents contained herein may be reprinted or reproduced without our prior permission.
Copyright 2001 Oki Electric Industry Co., Ltd.
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