OKI KGF2236 User Manual
E2Q0056-18-73
(
)
This version: Jul. 1998
Previous version: —
KGF2236¡ electronic components
¡ electronic components
KGF2236
Dual Monolithic GaAs Power FET
GENERAL DESCRIPTION
The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
features high efficiency at 3 V. Since the KGF2236 is made up of Driver FET and Power FET, that
is good to develop smaller and lighter. The KGF2236 specifications are guaranteed to fixed
matching circuit of 3.5 V and 835 MHz; external impedance-matching circuit are also required.
The KGF2236 provides high efficiency 60% (typical) with a 31.5 dBm (min. @Pin=7 dBm) output
at 3.5 V. The device is optimized for transmitter-final-stage amplifiers in Portable Handy Phones
(PHPs) and other 3 V analog cellular phone.
FEATURES
• Dual monolithic GaAs Power FET
• High efficiency: 60% (typ.)
• High gain: 25 dB
• Specifications guaranteed to a fixed matching circuit at 3.5 V, 835 MHz
• Package: 16PSSOP
PACKAGE DIMENSIONS
5.5±0.12
16
6.4±0.2
5.0±0.120.70±0.2
1
0.65±0.1
(4.55)
0.22±0.1
9
8
0.25±0.1
1.1
(2.6)
(2.6)
(3.0)
Unit: mm
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MARKING
KGF2236¡ electronic components
(16) (9)
CIRCUIT
K2236
X X X X
Index
(1) (8)
(3)
(1)
Q1
Production Name
Lot Number
Monthly Lot Number
Production Month (1–9, X, Y, Z)
Production Year (Lowest Digit)
(4)
(6)
Q2
(2)
Q1: First stage (Driver-FET)
(1) Gate
(2) Source
(3) Drain
(5)
Q2: Final stage (Power-FET)
(4) Gate
(5) Source
(6) Drain
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KGF2236¡ electronic components
ABSOLUTE MAXIMUM RATINGS
Item Symbol Conditions Unit Min. Max. Notes
Drain-source voltage Q1V
Gate-source voltage Q1V
Drain current Q1I
Total power dissipation Q1P
Channel temperature Q1T
Drain-source voltage Q2V
Gate-source voltage Q2V
Drain current Q2I
Total power dissipation Q2P
Channel temperature Q2T
Storage temperature T
DSI
GSI
DSI
tot1
ch1
DS2
GS2
DS2
tot2
ch2
stg
Ta = 25°C V — 8.0
Ta = 25°C V –6.0 0.4
Ta = 25°C A — 1.0
Ta = Tc = 25°C W — 2.0
— °C — 150
T a= 25°C V — 8.0
Ta = 25°C V –6.0 0.4
Ta = 25°C A — 5.0
Ta = Tc = 25°C W — 5.0
— °C — 150
— °C –45 150
ELECTRICAL CHARACTERISTICS
Item Symbol Conditions Unit Min. Typ. Notes
Gate-source leakage current Q1I
Gate-drain cut-off voltage Q1V
Drain current Q1I
Gate bias Q point Q1V
Thermal resistance Q1R
Gate-source leakage current Q2I
Gate-drain cut-off voltage Q2V
Drain current Q2I
Gate bias Q point Q2V
Thermal resistance Q2R
GSS1
GDO1
DSS1
GSQ1
th1
GSS2
GDO2
DSS2
GSQ2
th2
Output Power P
Power added efficiency PAE *1 % 55 60
VGS = –6 V mA — —
IGD = –0.3 mA V –15 —
VDS = 1.5 V, VGS = 0 V A 0.4 —
VDS = 3.5 V, IDS = 80 mA V –2.5 —
Channel to Case °C/W — —
VGS = –6 V mA — —
IGD = –2.4 mA V –15 —
VDS = 1.5 V, VGS = 0 V A 4.0 —
VDS = 3.5 V, IDS = 200 mA V –2.8 —
Channel to Case °C/W — —
*1 dBm 31.5 — —
O
(Ta=25°C)
(Ta=25°C)
Max.
0.1
—
—
–1.5
50
0.1
—
—
–1.8
20
—
Q1+Q2
Q1+Q2
*1 Condition: f = 835 MHz, VDS = 3.5 V, I
DSQ1
= 80 mA, I
= 200 mA, PIN = 7 dBm
DSQ2
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