OKI KGF1522 Datasheet
E2Q0019-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1522¡ electronic components
¡ electronic components
KGF1522
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that
features low voltage operation, low current operation, low noise, and low distortion. The
KGF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of its high 3rd-order intercept point,
even at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal
handy phones, such as digital keying cordless phones that require low intermodulation properties.
FEATURES
• Low voltage and low current operation: 3 V, 5 mA (max.)
• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz
• Low noise figure: 1.3 dB (typ.) at 1.9 GHz
• High linear gain: 12.5 dB (typ.) at 1.9 GHz
• High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
+0.1
0.6
–0.05
3.0±0.2
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
1/8
MARKING
(4) (3)
X
XF
KGF1522¡ electronic components
CIRCUIT
(1)
G(1)
(2)
GND(4)
NUMERICAL
ALPHABETICAL
PRODUCT TYPE
D(3)
S(2)
LOT
NUMBER
(1) Gate
(2) Source
(3) Drain
(4) GND
2/8
ABSOLUTE MAXIMUM RATINGS
KGF1522¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 50mA —
Ta = 25°C
—
mW
°C
— 125°C
Min.
—
–3.0
—
—
–45
4.0
0.4
200
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current 30mA—VGS = –3 V —
Gate-drain leakage current 30mA—VGD = –6 V —
Drain-source leakage current 30mA—VDS = 3 V, VGS = –2 V —
Drain current —mA 15VDS = 3 V, VGS = 0 V 25
Operating current 5.0mA —(*1), P
Gate-source cut-off voltage –0.6V –1.4VDS = 3 V, IDS = 100 mA—
Transconductance —mS 20VDS = 3 V, IDS = 4 mA 25
Linear gain G
Output power —dBm
Third-order intercept point IP
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
g
P
I
D
m
LIN
O1
(*1)
3
= –20 dBm 3.5
IN
= –20 dBm
IN
dB
dBm ——17(*2), f2 = 1.901 GHz
Min.
—
2.0
Typ.
1.3Noise figure F (*1) dB
4.5
2.0
—11.0 12.5(*1), P
*1 Self-bias condition: V
= 3 V ± 0.3 V, V
DD
= 0 V, f = 1.9 GHz
G
3/8
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