OKI KGF1313 Datasheet

E2Q0029-38-72

This version: Jul. 1998

Previous version: Jan. 1998

KGF1313¡ electronic components

¡ electronic components

KGF1313

Power FET (Plastic Package Type)

GENERAL DESCRIPTION

The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with
frequencies ranging from the UHF-band to the L-band. This device features high efficiency and
high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for

3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high
efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as
a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless
phones.

FEATURES

• Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz

• High output power: 27 dBm (min.) at 1.9 GHz

• High efficiency: 50% (typ.) at 1.9 GHz

• Low thermal resistance: 23°C/W (typ.)

• Package: 3PMMP (SOT-89 type)

PACKAGE DIMENSIONS

4.5±0.1

+0.15

1.6

–0.10

+0.08

0.48

–0.05

3±0.1

0.4

+0.08
–0.05

1.5±0.1 1.5±0.1

0.4

+0.08
–0.05

0.11

±

2.5

0.2

±

0.2

±

4

±

0.05

0.39

(Unit: mm)

1.5±0.1

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

Cu

Solder plating

5 mm or more

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MARKING

KGF1313¡ electronic components

CIRCUIT

(1)

(2)

(3)

Gate(1)

P1

XX

PRODUCT TYPE

LOT NUMBER
(MUMERICAL or
ALPHABETICAL)

Drain(3)

(1) Gate
(2) Source
(3) Drain

Source(2)

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ABSOLUTE MAXIMUM RATINGS

KGF1313¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

Ta = 25°C

V

V

Ta = 25°C 2.0A —

Ta = Tc = 25°C

—

W

°C

— 125°C

Min.

—

–5.0

—

—

–45

ELECTRICAL CHARACTERISTICS

Item

Gate-source leakage current 100mA—VGS = –5 V —

Gate-drain leakage current 500mA—VGD = –12 V —

Drain-source leakage current 1500mA—VDS = 7 V, VGS = –5 V —

Drain current —A 1.3VDS = 1.5 V, VGS = 0 V —

Gate-source cut-off voltage –2.0V –3.0VDS = 3 V, IDS = 4.0 mA —

Output power —dBm

Linear gain G

Thermal resistance R

*1 Condition: f = 1.9 GHz, V

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

P

LIN

= 3.4 V, I

DS

(*1), P

O

(*1), P

D

th

= 20 dBm

IN

= 20 dBm %

IN

= 0 dBm

IN

= 200 mA

DSQ

dB

°C/W ——15Channel to case

Min.

27.0

45

Typ.

27.5

50Drain efficiency h

7.0

0.4

4.5

150

(Ta = 25°C)

—

—— 9.5(*1), P

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