OKI KGF1283 Datasheet
E2Q0026-38-72
This version: Jul. 1998
Previous version: Jan. 1998
KGF1283¡ electronic components
¡ electronic components
KGF1283
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET
that features high efficiency, high output power, and high gain. The KGF1283 specifications are
guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching
circuits are also required. Because of its high efficiency, high output power (more than 26.5 dBm),
high gain, and plastic package, the KGF1283 is ideal as a transmitter-driver amplifier for personal
handy phones.
FEATURES
• High output power: 26.5 dBm (min.)
• High efficiency: 60% (typ.)
• High linear gain: 17 dB (typ.)
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5±0.1
+0.15
1.6
–0.10
+0.08
0.48
–0.05
3±0.1
0.4
+0.08
–0.05
1.5±0.1 1.5±0.1
0.4
+0.08
–0.05
0.11
±
2.5
0.2
±
0.2
±
4
±
0.05
0.39
(Unit: mm)
1.5±0.1
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
Cu
Solder plating
5 mm or more
1/7
MARKING
KGF1283¡ electronic components
CIRCUIT
(1)
(2)
(3)
Gate(1)
D1
XX
PRODUCT TYPE
LOT NUMBER
(NUMERICAL or
ALPHABETICAL)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Source(2)
2/7
ABSOLUTE MAXIMUM RATINGS
KGF1283¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 0.8A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–6.0
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 50mA—VGS = –6 V —
Gate-drain leakage current 150mA—VGD = –16 V —
Drain-source leakage current 500mA—VDS = 10 V, VGS = –6 V —
Drain current —mA 450VDS = 1.5 V, VGS = 0 V —
Gate-source cut-off voltage –2.0V –3.0VDS = 3 V, IDS = 1.4 mA —
Output power —dBm
Linear gain G
Thermal resistance R
*1 Condition: f = 850 MHz, V
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
P
O
D
LIN
th
= 5.8 V, I
DS
(*1), P
(*1), P
= 15 dBm
IN
= 15 dBm %
IN
= –5 dBm
IN
= 70 mA
DSQ
dB
°C/W ——35Channel to case
Min.
26.5
50
Typ.
27.5
60Drain efficiency h
10
0.4
2.5
150
(Ta = 25°C)
—
—— 17.0(*1), P
3/7
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