OKI KGF1262 Datasheet
E2Q0025-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1262¡ electronic components
¡ electronic components
KGF1262
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1262 is a medium-power amplifier, with frequencies ranging from the UHF-band to the
L-band, that features high gain, high output power, and low current operation. The KGF1262
specifications are guaranteed to a fixed matching circuit for 5.2 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of the high gain and high output power
at the low operating current, the KGF1262 is ideal as a transmitter-driver amplifier for personal
handy phones of more than 1.5 GHz band.
FEATURES
• High linear gain: 15 dB (min.) at 1.9 GHz
• High output power: 18 dBm (min.) at 1.9 GHz
• Low current operation: 70 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
+0.1
0.6
–0.05
3.0±0.2
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
1/10
MARKING
(4) (3)
X
XN
KGF1262¡ electronic components
CIRCUIT
(1)
Gate(1)
(2)
NUMERICAL
ALPHABETICAL
PRODUCT TYPE
GND(4)
Drain(3)
Source(2)
LOT
NUMBER
(1) Gate
(2) Source
(3) Drain
(4) GND
2/10
ABSOLUTE MAXIMUM RATINGS
KGF1262¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 360mA —
Ta = 25°C
—
mW
°C
— 125°C
Min.
—
–5.0
—
—
–45
10
0.4
300
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current 0.1mA —VGS = –5 V —
Gate-drain leakage current 0.5mA —VGD = –15 V —
Drain-source leakage current 1.0mA —VDS = 3 V, VGS = –2.5 V —
Drain current —mA 180VDS = 3 V, VGS = 0 V —
Operating current 70.0mA —(*1), P
Gate-source cut-off voltage –1.0mA –2.0VDS = 3 V, IDS = 720 mA—
Linear gain G
Output power —dBm
*1 Self-bias condition: V
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
I
D
V
GS(off)
m
LIN
P
O
= 5 V±0.25 V, V
DD
V
(*1), P
= 7 dBm 50.0
IN
= 3 V, IDS = 60 mA mS
DS
= –10 dBm
IN
= 7 dBm
IN
= 0 V, f = 1.9 GHz
G
dB
Min.
100
18.0
Typ.
—Transconductance g
20.0
—
—15.0 16.5(*1), P
3/10
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