How it Works
NXP Semiconductors
Loading...
PiP3209-R
User Manual
8 pgs46.65 Kb0
Table of contents
Loading...

NXP Semiconductors PiP3209-R User Manual

Download
Philips Semiconductors Product Specification
TOPFET high side switch PiP3209-R

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in TOPFET2 technology assembled in I a 5 pin plastic surface mount
L
package.

SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

V General controller for driving I lamps, motors, solenoids, heaters. T
BG
L
j
R
ON

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection
STATUS
INPUT
GROUND
BATT
POWER MOSFET
CONTROL &
PROTECTION
CIRCUITS
LOAD
RG
Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
1 Ground 2 Input 3 (connected to mb) 4 Status 5 Load
3
12 45
mb Battery
July 2001 1 Rev 1.000
mb
B
I
TOPFET
HSS
S
Fig. 2. Fig. 3.
G
L
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
BG
I
L
P
D
T
stg
T
j
T
sold
-V
BG
-V
BG
RI, R
II, I
S
II, I
S
E
BL
Continuous supply voltage 0 50 V Continuous load current T
Total power dissipation T
114˚C - 6 A
mb ≤
25˚C - 41 W
mb ≤
Storage temperature -55 175 ˚C Continuous junction temperature
1
- 150 ˚C
Mounting base temperature during soldering - 260 ˚C
Reverse battery voltages
2
Continuous reverse voltage - 16 V Peak reverse voltage - 32 V
Application information
S
External resistors
3
to limit input, status currents 3.2 - kΩ
Input and status
Continuous currents -5 5 mA Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA Inductive load clamping IL = 1 A, VBG = 16 V Non-repetitive clamping energy Tj = 150˚C prior to turn-off - 75 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance
R
th j-mb
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor.
Junction to mounting base - - 2.5 3 K/W
to protect the switch.
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T rating must be observed.
4
the over temperature trip operates
j(TO)
j
July 2001 2 Rev 1.000
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V V
-V
-V
V
I
I
I I
BG
BL
LG
LG
BG
B
L
G
L
Battery to ground IG = 1 mA 50 55 65 V Battery to load IL = IG = 1 mA 50 55 65 V Negative load to ground IL = 10 mA 18 23 28 V Negative load voltage
1
IL = 1 A; tp = 300 µs202530V
Supply voltage battery to ground Operating range
2
- 5.5 - 35 V
Currents 9 V ≤ VBG ≤ 16 V Quiescent current
3
VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 2 µA
Off-state load current
4
VBL = V
BG
--20µA
Tmb = 25˚C - 0.1 1 µA Operating current Nominal load current
5
6
IL = 0 A - 2 4 mA VBL = 0.5 V 2 - - A
Resistances V
R
ON
On-state resistance
7
BG
9 to 35 V 1 A 300 µs 25˚C - 135 180 mΩ
I
L
t
p
T
mb
150˚C - - 330 mΩ
R
ON
On-state resistance 6 V 1 A 300 µs 25˚C - 170 225 mΩ
150˚C - - 410 mΩ
R
G
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
Internal ground resistance IG = 10 mA 95 150 190 Ω
July 2001 3 Rev 1.000
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

INPUT CHARACTERISTICS

9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
V
IG
V
IG(ON)
V
IG(OFF)
∆V I
I(ON)
I
I(OFF)
IG
Input current VIG = 5 V 20 90 160 µA Input clamping voltage II = 200 µA 5.5 7 8.5 V Input turn-on threshold voltage - 2.4 3 V Input turn-off threshold voltage 1.5 2.1 - V Input turn-on hysteresis - 0.3 - V Input turn-on current VIG = 3 V - - 100 µA Input turn-off current VIG = 1.5 V 10 - - µA

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SG
V
SG
I
S
I
S
Status clamping voltage IS = 100 µA 5.5 7 8.5 V Status low voltage IS = 100 µA--1V
Tmb = 25˚C - 0.7 0.8 V Status leakage current VSG = 5 V - - 15 µA
Tmb = 25˚C - 0.1 1 µA Status saturation current
1
VSG = 5 V 2 7 12 mA
Application information
R
S
External pull-up resistor - 47 - kΩ

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V ≤ VBG ≤ 35 V
I
L(TO)
∆I
L(TO)
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
July 2001 4 Rev 1.000
Low current detect threshold 50 - 340 mA
Tj = 25˚C 85 170 255 mA
Hysteresis - 30 - mA
prevent possible interference with normal operation of the device.
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2 4.2 5.5 V
∆V
BG(UV)
Hysteresis - 0.5 - V
Overvoltage
V
BG(OV)
∆V
BG(OV)
High supply threshold voltage Hysteresis - 1 - V
2
40 45 50 V

TRUTH TABLE

ABNORMAL CONDITIONS
INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION
UV OV LC SC OT
L X X X X X OFF H off H 0 0 0 0 0 ON H on & normal H 0 0 1 0 0 ON L on & low current detect H 1 0 X X X OFF H supply undervoltage lockout H 0 1 X 0 0 OFF H supply overvoltage shutdown H 0 0 0 1 X OFF L SC tripped H 0 0 0 0 1 OFF L OT shutdown
DETECTED LOAD
3

KEY TO ABBREVIATIONS

L logic low UV undervoltage H logic high OV overvoltage X don’t care LC low current or open circuit load
0 condition not present SC short circuit
1 condition present OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
July 2001 5 Rev 1.000
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

OVERLOAD PROTECTION CHARACTERISTICS

5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BL
= V
BG
I
L(lim)
Overload protection V Load current limiting VBG ≥ 9 V 6 9 12 A
Short circuit load protection
V
BL(TO)
Battery load threshold voltage
1
VBG = 16 V 8 10 12 V VBG = 35 V 15 20 25 V
t
d sc
Response time
2
VBL > V
BL(TO)
- 180 250 µs
Overtemperature protection
T
∆T
j(TO)
j(TO)
Threshold junction 150 170 190 ˚C temperature
3
Hysteresis - 10 - ˚C

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, 9 V ≤ VBG ≤ 16 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on to VIG = 5 V
t
d on
dV/dt t
on
Delay time to 10% V Rate of rise of load voltage 30% to 70% V
on
Total switching time to 90% V
L
L
L
-2840µs
- 0.75 1 V/µs
-6090µs
During turn-off to VIG = 0 V
t
d off
dV/dt t
off
Delay time to 90% V Rate of fall of load voltage 70% to 30% V
off
Total switching time to 10% V
L
L
L
-3654µs
- 0.75 1 V/µs
-6090µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
ig
C
bl
C
sg
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation.
July 2001 6 Rev 1.000
Input capacitance VBG = 13 V - 15 20 pF Output capacitance VBL = 13 V - 100 140 pF Status capacitance VSG = 5 V - 11 15 pF
operated, the input voltage must be toggled low for the switch to resume normal operation.
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

MECHANICAL DATA

Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped)
E
D
1
mounting
base
D
H
D
3
1
24 5
b
e e ee
A
1
L
p
c
Q
SOT426
A
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
0.64
0.46
D
max.
11
D
1
10.30
1.60
1.20
REFERENCES
E
9.70
1.70
L
H
e
p
2.90
2.10
D
15.80
14.80
2.60
2.20
Q
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14 99-06-25
UNIT
mm
A
4.50
4.10
OUTLINE VERSION
SOT426
A
bc
1
1.40
0.85
1.27
0.60
IEC JEDEC EIAJ
Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
July 2001 7 Rev 1.000
Philips Semiconductors Product Specification
TOPFET high side switch PIP3209-R

DEFINITIONS

DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS
STATUS
Objective data Development This data sheet contains data from the objective specification for
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
1
STATUS
2
product development. Philips Semiconductors reserves the right to change the specification in any manner without notice
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
July 2001 8 Rev 1.000
available on the Internet at URL http://www.semiconductors.philips.com.
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use