NXP Semiconductors PiP3209-R User Manual

Philips Semiconductors	Product Specification
TOPFET high side switch	PiP3209-R

DESCRIPTION

QUICK REFERENCE DATA

Monolithic single channel high side

SYMBOL

PARAMETER

MIN.

UNIT

protected power switch in

TOPFET2 technology assembled in

IL

Nominal load current (ISO)

2

A

a 5 pin plastic surface mount

package.

SYMBOL

PARAMETER

MAX.

UNIT

APPLICATIONS

VBG

Continuous off-state supply voltage

50

V

General controller for driving

IL

Continuous load current

6

A

lamps, motors, solenoids, heaters.

Tj

Continuous junction temperature

150

˚C

RON

On-state resistance

Tj = 25˚C

180

mΩ

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection

Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection

Diagnostic status indication Voltage clamping for turn off of inductive loads

ESD protection on all pins Reverse battery, overvoltage and transient protection

		BATT
	STATUS
		POWER
	INPUT	MOSFET
		CONTROL &
		PROTECTION
		CIRCUITS
		LOAD
	GROUND	RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1Ground

2Input

3(connected to mb)

4Status

5Load

mb Battery

	mb
	I	B
		TOPFET L
	S	HSS
		G
3

1 2

4

5

Fig. 2.

Fig. 3.

July 2001

1

Rev 1.000

Philips Semiconductors	Product Specification
TOPFET high side switch	PIP3209-R

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VBG	Continuous supply voltage			0	50	V
IL	Continuous load current	Tmb ≤	114˚C	-	6	A
PD	Total power dissipation	Tmb ≤	25˚C	-	41	W
Tstg	Storage temperature			-55	175	˚C
T	Continuous junction temperature1			-	150	˚C
j
Tsold	Mounting base temperature	during soldering		-	260	˚C
	Reverse battery voltages2
-VBG	Continuous reverse voltage			-	16	V
-VBG	Peak reverse voltage			-	32	V
	Application information
RI, RS	External resistors3	to limit input, status currents		3.2	-	kΩ
	Input and status
II, IS	Continuous currents			-5	5	mA
II, IS	Repetitive peak currents	δ ≤ 0.1, tp = 300 µ s		-50	50	mA
	Inductive load clamping	IL = 1 A, VBG = 16 V
EBL	Non-repetitive clamping energy	Tj = 150˚C prior to turn-off		-	75	mJ

ESD LIMITING VALUE

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VC	Electrostatic discharge capacitor	Human body model;	-	2	kV
	voltage	C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
	Thermal resistance4
Rth j-mb	Junction to mounting base	-	-	2.5	3	K/W

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

July 2001

2

Rev 1.000

Philips Semiconductors	Product Specification
TOPFET high side switch	PIP3209-R

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL	PARAMETER	CONDITIONS					MIN.	TYP.	MAX.	UNIT
	Clamping voltages
VBG	Battery to ground	IG = 1 mA					50	55	65	V
VBL	Battery to load	IL = IG = 1 mA					50	55	65	V
-VLG	Negative load to ground	IL = 10 mA					18	23	28	V
-VLG	Negative load voltage1	IL = 1 A; tp = 300 µ s					20	25	30	V
	Supply voltage	battery to ground
V	Operating range2	-					5.5	-	35	V
BG
	Currents	9 V ≤ VBG ≤		16 V
IB	Quiescent current3	VLG = 0 V					-	-	20	µ	A
					Tmb = 25˚C		-	0.1	2	µ	A
IL	Off-state load current4	VBL = VBG					-	-	20	µ	A
					Tmb = 25˚C		-	0.1	1	µ	A
I	Operating current5	I	= 0 A				-	2	4	mA
G		L
I	Nominal load current6	V	= 0.5 V				2	-	-	A
L		BL
	Resistances		VBG	IL	tp	Tmb
RON	On-state resistance7	9 to 35 V		1 A	300 µ s	25˚C	-	135	180	mΩ
						150˚C	-	-	330	mΩ
RON	On-state resistance		6 V	1 A	300 µ s	25˚C	-	170	225	mΩ
						150˚C	-	-	410	mΩ
										Ω
RG	Internal ground resistance	IG = 10 mA					95	150	190

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. For comparison purposes only.

7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

July 2001

3

Rev 1.000