NXP Semiconductors PiP3209-R User Manual

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Philips Semiconductors

Product Specification

 

 

TOPFET high side switch

PiP3209-R

 

 

 

 

DESCRIPTION

 

QUICK REFERENCE DATA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Monolithic single channel high side

 

SYMBOL

 

PARAMETER

 

 

 

MIN.

 

UNIT

protected power switch in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TOPFET2 technology assembled in

 

IL

 

Nominal load current (ISO)

 

 

 

2

 

 

A

a 5 pin plastic surface mount

 

 

 

 

 

 

 

 

 

 

 

 

 

package.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

 

PARAMETER

 

 

 

MAX.

 

UNIT

APPLICATIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VBG

 

Continuous off-state supply voltage

 

50

 

 

V

 

 

 

 

 

 

General controller for driving

 

IL

 

Continuous load current

 

 

 

6

 

 

A

lamps, motors, solenoids, heaters.

 

Tj

 

Continuous junction temperature

 

150

 

 

˚C

 

 

RON

 

On-state resistance

Tj = 25˚C

 

180

 

 

mΩ

FEATURES

 

FUNCTIONAL BLOCK DIAGRAM

 

 

 

 

 

 

 

 

Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection

Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection

Diagnostic status indication Voltage clamping for turn off of inductive loads

ESD protection on all pins Reverse battery, overvoltage and transient protection

 

BATT

STATUS

 

 

POWER

INPUT

MOSFET

CONTROL &

 

 

PROTECTION

 

CIRCUITS

 

LOAD

GROUND

RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1Ground

2Input

3(connected to mb)

4Status

5Load

mb Battery

 

mb

 

 

I

B

 

TOPFET L

 

 

 

S

HSS

 

G

3

 

1 2

4

5

Fig. 2.

Fig. 3.

July 2001

1

Rev 1.000

Philips Semiconductors

Product Specification

 

 

TOPFET high side switch

PIP3209-R

 

 

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

 

VBG

Continuous supply voltage

 

 

0

50

V

IL

Continuous load current

Tmb

114˚C

-

6

A

PD

Total power dissipation

Tmb

25˚C

-

41

W

Tstg

Storage temperature

 

 

-55

175

˚C

T

Continuous junction temperature1

 

 

-

150

˚C

j

 

 

 

 

 

 

Tsold

Mounting base temperature

during soldering

-

260

˚C

 

Reverse battery voltages2

 

 

 

 

 

-VBG

Continuous reverse voltage

 

 

-

16

V

-VBG

Peak reverse voltage

 

 

-

32

V

 

Application information

 

 

 

 

 

RI, RS

External resistors3

to limit input, status currents

3.2

-

kΩ

 

 

 

 

 

 

 

 

Input and status

 

 

 

 

 

II, IS

Continuous currents

 

 

-5

5

mA

II, IS

Repetitive peak currents

δ ≤ 0.1, tp = 300 µ s

-50

50

mA

 

 

 

 

 

 

 

Inductive load clamping

IL = 1 A, VBG = 16 V

 

 

 

EBL

Non-repetitive clamping energy

Tj = 150˚C prior to turn-off

-

75

mJ

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VC

Electrostatic discharge capacitor

Human body model;

-

2

kV

 

voltage

C = 250 pF; R = 1.5 kΩ

 

 

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

Thermal resistance4

 

 

 

 

 

Rth j-mb

Junction to mounting base

-

-

2.5

3

K/W

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

July 2001

2

Rev 1.000

Philips Semiconductors

Product Specification

 

 

TOPFET high side switch

PIP3209-R

 

 

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

 

 

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

Clamping voltages

 

 

 

 

 

 

 

 

 

 

VBG

Battery to ground

IG = 1 mA

 

 

 

50

55

65

V

VBL

Battery to load

IL = IG = 1 mA

 

 

50

55

65

V

-VLG

Negative load to ground

IL = 10 mA

 

 

 

18

23

28

V

-VLG

Negative load voltage1

IL = 1 A; tp = 300 µ s

 

 

20

25

30

V

 

 

 

 

 

 

 

 

 

 

 

Supply voltage

battery to ground

 

 

 

 

 

 

 

V

Operating range2

-

 

 

 

5.5

-

35

V

BG

 

 

 

 

 

 

 

 

 

 

 

 

Currents

9 V ≤ VBG

16 V

 

 

 

 

 

 

 

IB

Quiescent current3

VLG = 0 V

 

 

 

-

-

20

µ

A

 

 

 

 

 

Tmb = 25˚C

-

0.1

2

µ

A

IL

Off-state load current4

VBL = VBG

 

 

 

-

-

20

µ

A

 

 

 

 

 

Tmb = 25˚C

-

0.1

1

µ

A

I

Operating current5

I

= 0 A

 

 

 

-

2

4

mA

G

 

L

 

 

 

 

 

 

 

 

 

I

Nominal load current6

V

= 0.5 V

 

 

 

2

-

-

A

L

 

BL

 

 

 

 

 

 

 

 

 

Resistances

 

VBG

IL

tp

Tmb

 

 

 

 

 

RON

On-state resistance7

9 to 35 V

1 A

300 µ s

25˚C

-

135

180

mΩ

 

 

 

 

 

 

150˚C

-

-

330

mΩ

RON

On-state resistance

 

6 V

1 A

300 µ s

25˚C

-

170

225

mΩ

 

 

 

 

 

 

150˚C

-

-

410

mΩ

 

 

 

 

 

 

 

 

 

 

RG

Internal ground resistance

IG = 10 mA

 

 

 

95

150

190

 

 

 

 

 

 

 

 

 

 

 

 

 

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. For comparison purposes only.

7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

July 2001

3

Rev 1.000

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