NXP Semiconductors
KTFRDMHB2000FEVMUG
FRDM-HB2000FEVM evaluation board
KTFRDMHB2000FEVMUG All information provided in this document is subject to legal disclaimers. © NXP B.V. 2016. All rights reserved
User guide Rev. 1.0 — 5 July 2016
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Table 1. Device features
Device Description Features
MC33HB2000 The 33HB2000 is a monolithic H-Bridge
Power IC, enhanced with SPI configurability
and diagnostic capabilities.
• Advanced diagnostic reporting via a serial peripheral
interface (SPI): charge pump undervoltage on VPWR,
short to ground and short to VPWR for each output,
open load, temperature warning and overtemperature
shutdown
• Thermal management: excellent thermal resistance of
< 1.0 °C/W between junction and case (exposed pad)
• Eight selectable slew rates via the SPI: 0.25 V/μs to
more than 16 V/μs for EMI and thermal performance
optimization
• Four selectable current limits via the SPI:
5.4/7.0/8.8/10.7 A, covering a wide range of
applications
• Can be operated without the SPI with a default slew
rate of 2.0 V/μs and a 7.0 A current limit threshold
• Highly accurate real-time current feedback through a
current mirror output signal with less than 5.0 % error
• Drives inductive loads in a full H-Bridge or Half-bridge
configuration
• Overvoltage protection places the load in high-side
recirculation (braking) mode with notification in HBridge mode
• Wide operating range: 5.0 V to 28 V operation
• Low R
DS(on)
integrated MOSFETs: Maximum of
235 mΩ (TJ = 150 °C) for each MOSFET
• Internal protection for overtemperature, undervoltage
and short-circuit by signaling the error condition and
disabling the outputs
• I/0 pins can withstand up to 36 V
4.3.2 Modes of operation