NXP Semiconductors CGD944C User Manual

CGD944C

870 MHz, 25 dB gain power doubler amplifier

Rev. 01 — 6 June 2007

Product data sheet

1.Product profile

1.1General description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

nHigh output capability

nExcellent linearity

nExtremely low noise

nExcellent return loss properties

nRugged construction

nGold metallization ensures excellent reliability

1.3Applications

nCATV systems operating in the 40 MHz to 870 MHz frequency range

1.4Quick reference data

Table 1.	Quick reference data
Symbol	Parameter	Conditions		Min	Typ	Max	Unit
Gp	power gain	f = 870 MHz	24		25	26	dB
Itot	total current	VB = 24 V	[1]	-	450	-	mA

[1]Direct Current (DC)

NXP Semiconductors	CGD944C
	870 MHz, 25 dB gain power doubler amplifier

2. Pinning information

Table 2.	Pinning
Pin	Description	Simplified outline	Symbol
1	input
2, 3	common	1 3 5 7 9			5
5	+VB		1			9
7, 8	common		2	3	7	8
9	output
						sym095

3. Ordering information

Table 3. Ordering information

Type number	Package
	Name	Description	Version
CGD944C	-	rectangular single-ended package; aluminium flange;	SOT115J
		2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
		horizontal mounting holes; 7 gold-plated in-line leads

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
VB	supply voltage		-	30	V
Vi(RF)	RF input voltage	single tone	-	75	dBmV
		132 channels flat	-	45	dBmV
Tstg	storage temperature		−40	+100	°C
Tmb	mounting base temperature		−20	+100	°C

CGD944C_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 6 June 2007

2 of 7

NXP Semiconductors	CGD944C
	870 MHz, 25 dB gain power doubler amplifier

5. Characteristics

Table 5. Characteristics

Bandwidth to 870 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified.

Symbol		Parameter	Conditions			Min	Typ	Max	Unit
Gp		power gain	f = 870 MHz			24	25	26	dB
SLsl		slope straight line	f = 40 MHz to 870 MHz		[1]	1	-	2	dB
FL		flatness of frequency response	f = 40 MHz to 870 MHz		[2]	-	0.5	-	dB
CTB		composite triple beat	79	+ 53 flat NTSC channels	[3]	-	−68	−66	dB
			98	flat PAL channels	[4]	-	−66	-	dB
CSO		composite second-order distortion	79	+ 53 flat NTSC channels	[3]	-	−70	−67	dB
			98	flat PAL channels	[4]	-	−66	-	dB
Xmod		cross modulation	79	+ 53 flat NTSC channels	[3]	-	−66	−58	dB
RLin		input return loss	f = 40 MHz to 80 MHz			20	-	-	dB
			f = 80 MHz to 160 MHz			19	-	-	dB
			f = 160 MHz to 320 MHz			18	-	-	dB
			f = 320 MHz to 640 MHz			18	-	-	dB
			f = 640 MHz to 870 MHz			18	-	-	dB
RLout		output return loss	f = 40 MHz to 80 MHz			20	-	-	dB
			f = 80 MHz to 160 MHz			19	-	-	dB
			f = 160 MHz to 320 MHz			18	-	-	dB
			f = 320 MHz to 640 MHz			18	-	-	dB
			f = 640 MHz to 870 MHz			18	-	-	dB
NF		noise figure	f = 50 MHz			-	3.5	5.0	dB
			f = 870 MHz			-	3.5	5.0	dB
I	tot	total current	V	= 24 V	[5]	-	450	-	mA
			B

[1]Gp at 870 MHz minus Gp at 40 MHz.

[2]flatness straight line (peak to valley).

[3]79 NTSC channels: 55.25 MHz to 547.25 MHz, 48 dBmV output level; + 53 NTSC channels 553.25 MHz to 997.25 MHz, 38 dBmV output level.

[4]Vo = 48 dBmV

[5]Direct Current (DC)

CGD944C_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 6 June 2007

3 of 7