NXP Semiconductors CGD944C User Manual

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CGD944C

870 MHz, 25 dB gain power doubler amplifier

Rev. 01 — 6 June 2007

Product data sheet

1.Product profile

1.1General description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

nHigh output capability

nExcellent linearity

nExtremely low noise

nExcellent return loss properties

nRugged construction

nGold metallization ensures excellent reliability

1.3Applications

nCATV systems operating in the 40 MHz to 870 MHz frequency range

1.4Quick reference data

Table 1.

Quick reference data

 

 

 

 

 

 

Symbol

Parameter

Conditions

 

Min

Typ

Max

Unit

Gp

power gain

f = 870 MHz

24

25

26

dB

Itot

total current

VB = 24 V

[1]

-

450

-

mA

 

[1]Direct Current (DC)

NXP Semiconductors

CGD944C

 

870 MHz, 25 dB gain power doubler amplifier

2. Pinning information

Table 2.

Pinning

 

 

 

 

 

Pin

Description

Simplified outline

Symbol

 

 

 

1

input

 

 

 

 

 

2, 3

common

1 3 5 7 9

 

 

5

 

5

+VB

 

1

 

 

9

 

 

 

 

 

7, 8

common

 

2

3

7

8

9

output

 

 

 

 

 

sym095

 

 

 

 

 

 

3. Ordering information

Table 3. Ordering information

Type number

Package

 

 

 

Name

Description

Version

CGD944C

-

rectangular single-ended package; aluminium flange;

SOT115J

 

 

2 vertical mounting holes; 2 × 6-32 UNC and 2 extra

 

 

 

horizontal mounting holes; 7 gold-plated in-line leads

 

 

 

 

 

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VB

supply voltage

 

-

30

V

Vi(RF)

RF input voltage

single tone

-

75

dBmV

 

 

132 channels flat

-

45

dBmV

 

 

 

 

 

 

Tstg

storage temperature

 

40

+100

°C

Tmb

mounting base temperature

 

20

+100

°C

CGD944C_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 6 June 2007

2 of 7

NXP Semiconductors

CGD944C

 

870 MHz, 25 dB gain power doubler amplifier

5. Characteristics

Table 5. Characteristics

Bandwidth to 870 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified.

Symbol

Parameter

Conditions

 

Min

Typ

Max

Unit

Gp

power gain

f = 870 MHz

 

24

25

26

dB

SLsl

slope straight line

f = 40 MHz to 870 MHz

[1]

1

-

2

dB

 

FL

flatness of frequency response

f = 40 MHz to 870 MHz

[2]

-

0.5

-

dB

 

 

 

 

 

 

 

 

 

 

CTB

composite triple beat

79

+ 53 flat NTSC channels

[3]

-

68

66

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

98

flat PAL channels

[4]

-

66

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

CSO

composite second-order distortion

79

+ 53 flat NTSC channels

[3]

-

70

67

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

98

flat PAL channels

[4]

-

66

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

Xmod

cross modulation

79

+ 53 flat NTSC channels

[3]

-

66

58

dB

 

 

 

 

 

 

 

 

 

RLin

input return loss

f = 40 MHz to 80 MHz

 

20

-

-

dB

 

 

 

f = 80 MHz to 160 MHz

 

19

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 160 MHz to 320 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 320 MHz to 640 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 640 MHz to 870 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

RLout

output return loss

f = 40 MHz to 80 MHz

 

20

-

-

dB

 

 

 

f = 80 MHz to 160 MHz

 

19

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 160 MHz to 320 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 320 MHz to 640 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 640 MHz to 870 MHz

 

18

-

-

dB

 

 

 

 

 

 

 

 

NF

noise figure

f = 50 MHz

 

-

3.5

5.0

dB

 

 

 

 

 

 

 

 

 

 

 

 

f = 870 MHz

 

-

3.5

5.0

dB

 

 

 

 

 

 

 

 

 

 

I

tot

total current

V

= 24 V

[5]

-

450

-

mA

 

 

B

 

 

 

 

 

 

[1]Gp at 870 MHz minus Gp at 40 MHz.

[2]flatness straight line (peak to valley).

[3]79 NTSC channels: 55.25 MHz to 547.25 MHz, 48 dBmV output level; + 53 NTSC channels 553.25 MHz to 997.25 MHz, 38 dBmV output level.

[4]Vo = 48 dBmV

[5]Direct Current (DC)

CGD944C_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 6 June 2007

3 of 7

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