NXP Semiconductors CBT3126 User Manual

CBT3126
Quad FET bus switch
Rev. 04 — 12 October 2009 Product data sheet

1. General description

The CBT3126 is a quad FET bus switch with independent line switches. Each switch is disabled when the associated Output Enable (OE) input is LOW.
The CBT3126 is characterized for operation from 40 °Cto+85°C.

2. Features

n Standard ’126-type pinout n Multiple package options n 5 switch connection between two ports n TTL-compatible input levels n Minimal propagation delay through the switch n Latch-up protection exceeds 500 mA per JEDEC standard JESD78 class II level A n ESD protection:
u HBM JESD22-A114E exceeds 2000 V u MM JESD22-A115-A exceeds 200 V u CDM JESD22-C101C exceeds 1000 V
n Specified from 40 °Cto+85°C

3. Ordering information

Table 1. Ordering information
Type number Temperature range Package
Name Description Version
CBT3126D 40 °Cto+85°C SO14 plastic small outline package; 14 leads;
body width 3.9 mm
CBT3126DB 40 °Cto+85°C SSOP14 plastic shrink small outline package; 14 leads;
body width 5.3 mm
CBT3126PW 40 °Cto+85°C TSSOP14 plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
[1]
CBT3126DS 40 °Cto+85°C SSOP16
[1] Also known as QSOP16.
plastic shrink small outline package; 16 leads; body width 3.9 mm; leadpitch 0.635 mm
SOT108-1
SOT337-1
SOT402-1
SOT519-1
NXP Semiconductors

4. Functional diagram

1OE
1A 1B
2OE
2A 2B
3OE
3A 3B
4OE
4A 4B
001aaj023
Pin numbers are for the 14 pin packages.
Fig 1. Logic symbol Fig 2. Logic diagram
1A
1OE
2A
2OE
3A
3OE
4A
4OE
CBT3126
Quad FET bus switch
23
1 56
4 98
10 12 11
13
1B
2B
3B
4B
001aaj024

5. Pinning information

5.1 Pinning

CBT3126
1
1OE V
2
1A 4OE
3
1B 4A
4
2OE 4B
5
2A 3OE
6
2B 3A
7 8
GND 3B
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Fig 3. Pin configuration
SOT108-1 (SO14)

5.2 Pin description

14
CC
13
12
11
10
9
CBT3126
1
1OE V
2
1A 4OE
3
1B 4A
4
2OE 4B
5
2A 3OE
6
2B 3A
7
GND 3B
001aaj025
14 13 12 11 10
Fig 4. Pin configuration
SOT337-1 (SSOP14) and SOT402-1 (TSSOP14)
CBT3126
1
n.c. V
2
CC
9 8
1OE 4OE
3
1A 4A
4
1B 4B
5
2OE 3OE
6
2A 3A
7
2B 3B
8
GND n.c.
001aaj026
16
CC
15 14 13 12 11 10
9
Fig 5. Pin configuration
SOT519-1 (SSOP16)
Table 2. Pin description
Symbol Pin Description
SOT108-1 SOT337-1 and SOT402-1 SOT519-1
1OE to 4OE 1, 4, 10, 13 2, 5, 12, 15 output enable input 1A to 4A, 2, 5, 9, 12 3, 6, 11, 14 A input/output 1B to 4B 3, 6, 8, 11 4, 7, 10, 13 B output/input
CBT3126_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 12 October 2009 2 of 13
NXP Semiconductors
CBT3126
Quad FET bus switch
Table 2. Pin description
…continued
Symbol Pin Description
SOT108-1 SOT337-1 and SOT402-1 SOT519-1
GND 7 8 ground (0 V) V
CC
14 16 positive supply voltage
n.c. - 1, 9 not connected

6. Functional description

Table 3. Function selection
H = HIGH voltage level; L = LOW voltage level.
Inputs Switch nOE
L nA to nB disconnected H nA to nB connected

7. Limiting values

Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V V I I T P
CC
I SW IK
stg
tot
supply voltage 0.5 +7.0 V input voltage
[1]
0.5 +7.0 V switch current continuous current through each switch - 128 mA input clamping current VI<0V −50 - mA storage temperature 65 +150 °C total power dissipation T
= 40 °C to +125 °C
amb
SO14 package SSOP14 and SSOP16 package TSSOP14 package
[2] [3]
- 500 mW
[4]
- 500 mW
[4]
- 500 mW
[1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [2] The package thermal impedance is calculated from JESD51-7. [3] For SO14 package; P [4] For SSOP14, SSOP16 and TSSOP14 packages; P
derates linearly with 8 mW/K above 70 °C.
tot
derates linearly with 5.5 mW/K above 70 °C.
tot

8. Recommended operating conditions

Table 5. Operating conditions
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation.
Symbol Parameter Conditions Min Max Unit
V
CC
V
IH
V
IL
T
amb
CBT3126_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 12 October 2009 3 of 13
supply voltage 4.5 5.5 V HIGH-level input voltage 2.0 - V LOW-level input voltage - 0.8 V ambient temperature operating in free-air 40 +85 °C
NXP Semiconductors
Quad FET bus switch

9. Static characteristics

Table 6. Static characteristics
T
=−40°C to +85°C.
amb
Symbol Parameter Conditions Min Typ
V V I I
I
C C R
I CC
IK pass
CC
I io(off) ON
input clamping voltage VCC= 4.5 V; II= 18 mA - - 1.2 V pass voltage VI=VCC= 5.0 V; ISW= 100 µA - 3.8 - V input leakage current VCC= 5.5 V; VI= GND or 5.5 V - - ±1 µA supply current VCC= 5.5 V; ISW= 0 mA;
V
I=VCC
or GND
additional supply current control pins; per input;
V
= 5.5 V; one input at 3.4 V,
CC
other inputs at V
or GND
CC
--3µA
[2]
- - 2.5 mA
input capacitance control pins; VI= 3 V or 0 V - 1.7 - pF off-state input/output capacitance VO= 3 V or 0 V; nOE = V ON resistance VCC= 4.0 V
CC
- 3.4 - pF
[3]
VI= 2.4 V; II= 15 mA - 16 22
= 4.5 V
V
CC
=0V; II=64mA - 5 7
V
I
=0V; II=30mA - 5 7
V
I
= 2.4 V; II= 15 mA - 10 15
V
I
CBT3126
[1]
Max Unit
[1] All typical values are measured at VCC=5V; T [2] This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND. [3] Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. ON resistance is
determined by the lowest voltage of the two (A or B) terminals.
amb
=25°C.

10. Dynamic characteristics

Table 7. Dynamic characteristics
T
=−40°C to +85°C; VCC= 4.5 V to 5.5 V; for test circuit see Figure 8.
amb
Symbol Parameter Conditions Min Max Unit
t
pd
t
en
t
dis
[1] This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical ON
resistance of the switch and a load capacitance, when driven by an ideal voltage source (zero output impedance).
[2] t
PLH
t
PZL
t
PLZ
propagation delay nA to nB or nB to nA; see Figure 6 enable time nOE to nA or nB; see Figure 7 disable time nOE to nA or nB; see Figure 7
and t and t and t
are the same as tpd;
PHL
are the same as ten;
PZH
are the same as t
PHZ
.
dis
[1][2]
- 0.25 ns
[2]
1.6 4.5 ns
[2]
1.0 5.4 ns
CBT3126_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 12 October 2009 4 of 13
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