NXP PZU10B1A, PZU10B1A/DG, PZU10B2A, PZU10B2A/DG, PZU10B3A Schematic [ru]

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PZUxBA series
Single Zener diodes
Rev. 01 — 19 September 2008 Product data sheet
1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Non-repetitive peak reverse power
dissipation: P
n Total power dissipation: P
ZSM
40 W
320 mW n Small plastic package suitable for
tot
n Low reverse current IRrange
surface-mounted design
n Tolerance series:
n AEC-Q101 qualified
B: approximately ±5%; B1, B2, B3: approximately ±2%
n Wide working voltage range:
nominal 2.4 V to 36 V (E24 range)

1.3 Applications

n General regulation functions

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
F
P
ZSM
P
tot
[1] Pulse test: tp≤ 300 µs; δ≤0.02. [2] tp= 100 µs; square wave; Tj=25°C prior to surge [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
forward voltage IF= 100 mA non-repetitivepeakreverse
power dissipation total power dissipation T
footprint.
amb
25 °C
[1]
- - 1.1 V
[2]
--40W
[3]
- - 320 mW
NXP Semiconductors

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 2 anode
[1] The marking bar indicates the cathode.

3. Ordering information

Table 3. Ordering information
Type number Package
PZU2.4BA to PZU36BA
PZU2.4BA/DG to PZU36BA/DG
[1]
PZUxBA series
Single Zener diodes
[1]
21
Name Description Version
SC-76 plastic surface-mounted package; 2 leads SOD323
[1][2]
1
2
006aaa152
[1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V. [2] /DG: halogen-free
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 2 of 14
NXP Semiconductors

4. Marking

Table 4. Marking codes
Type number
PZU2.4*A X8 - - - PZU2.4*A/DG Y8 - - ­PZU2.7*A X9 XA XB - PZU2.7*A/DG Y9 YA YB ­PZU3.0*A XT XU XV - PZU3.0*A/DG YT YU YV ­PZU3.3*A XW XX XY - PZU3.3*A/DG YW YX YY ­PZU3.6*A XZ MC MD - PZU3.6*A/DG YZ NC ND ­PZU3.9*A ME MF MG - PZU3.9*A/DG NE NF NG ­PZU4.3*A MM MN MP MR PZU4.3*A/DG NM NN NP NR PZU4.7*A MS MT MU MV PZU4.7*A/DG NS NT NU NV PZU5.1*A MW MX MY MZ PZU5.1*A/DG NW NX NY NZ PZU5.6*A LF LG LH LK PZU5.6*A/DG RF RG RH RK PZU6.2*A LL LM LN LP PZU6.2*A/DG RL RM RN RP PZU6.8*A LR LS LT LU PZU6.8*A/DG RR RS RT RU PZU7.5*A LV LW LX LY PZU7.5*A/DG RV RW RX RY PZU8.2*A LZ CR CS CT PZU8.2*A/DG RZ ER ES ET PZU9.1*A CU CV CW CX PZU9.1*A/DG EU EV EW EX PZU10*A VA VB VC VD PZU10*A/DG WA WB WC WD PZU11*A VE VF VG VH PZU11*A/DG WE WF WG WH PZU12*A VK VL VM VN PZU12*A/DG WK WL WM WN PZU13*A VP VR VS VT PZU13*A/DG WP WR WS WT PZU14*A - - VU - PZU14*A/DG - - WU ­PZU15*A VV VW VX VY PZU15*A/DG WV WW WX WY PZU16*A VZ X1 X2 X3 PZU16*A/DG WZ Y1 Y2 Y3 PZU18*A X4 X5 X6 X7 PZU18*A/DG Y4 Y5 Y6 Y7 PZU20*A XC XD XE XF PZU20*A/DG YC YD YE YF PZU22*A XG XH XK XL PZU22*A/DG YG YH YK YL PZU24*A XM XN XP XR PZU24*A/DG YM YN YP YR PZU27*A XS - - - PZU27*A/DG YS - - ­PZU30*A MH - - - PZU30*A/DG NH - - ­PZU33*A MK - - - PZU33*A/DG NK - - ­PZU36*A ML - - - PZU36*A/DG NL - - -
PZUxBA series
Single Zener diodes
[1]
Marking code Type number B B1 B2 B3 B B1 B2 B3
[1]
Marking code
[1] * = B: tolerance series B, approximately ±5%
* = B1, B2, B3: tolerance series B1, B2, B3: approximately ±2%
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 3 of 14
NXP Semiconductors

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1] tp= 100 µs; square wave; Tj=25°C prior to surge [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
PZUxBA series
Single Zener diodes
forward current - 200 mA non-repetitive peak reverse
current
non-repetitive peak reverse power dissipation
total power dissipation T
amb
25 °C
junction temperature - 150 °C ambient temperature 55 +150 °C storage temperature 65 +150 °C
[1]
- see
Table 8
and
9
[1]
-40W
[2]
- 320 mW
[3]
- 490 mW

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient
R
th(j-sp)
thermal resistance from junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab.

7. Characteristics

Table 7. Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward voltage
in free air
[1]
- - 390 K/W
[2]
- - 255 K/W
[3]
--55K/W
[1]
IF= 10 mA - - 0.9 V
= 100 mA - - 1.1 V
I
F
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 4 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
Table 8. Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG
Tj=25°C unless otherwise specified.
PZUxBA Sel Working
voltage V
(V)
Z
IZ=5mA IZ= 0.5 mA IZ=5mA IZ=5mA Min Max Max Max Max VR(V) Typ Max Max
2.4 B 2.3 2.6 1000 100 50 1 1.6 450 8
2.7 B 2.5 2.9 1000 100 20 1 2.0 440 8 B1 2.5 2.75 B2 2.65 2.9
3.0 B 2.8 3.2 1000 95 10 1 2.1 425 8 B1 2.8 3.05 B2 2.95 3.2
3.3 B 3.1 3.5 1000 95 5 1 2.4 410 8 B1 3.1 3.35 B2 3.25 3.5
3.6 B 3.4 3.8 1000 90 5 1 2.4 390 8 B1 3.4 3.65 B2 3.55 3.8
3.9 B 3.7 4.1 1000 90 3 1 2.5 370 8 B1 3.7 3.97 B2 3.87 4.10
4.3 B 4.01 4.48 1000 90 3 1 2.5 350 8 B1 4.01 4.21 B2 4.15 4.34 B3 4.28 4.48
4.7 B 4.42 4.9 800 80 2 1 1.4 325 8 B1 4.42 4.61 B2 4.55 4.75 B3 4.69 4.9
5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5 B1 4.84 5.04 B2 4.98 5.2 B3 5.14 5.37
5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5 B1 5.31 5.55 B2 5.49 5.73 B3 5.67 5.92
Differentialresistance r
()
dif
Reverse current I
(µA)
R
Temperature coefficient S
(mV/K)
Z
Diode capacitance
d
(pF)
[1]
C
Non-repetitive peak reverse current
ZSM
(A)
[2]
I
[1] f = 1 MHz; VR=0V [2] tp= 100 µs; square wave; Tj=25°C prior to surge
PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 September 2008 5 of 14
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