NXP PZT2222A Schematic [ru]

DATA SH EET

handbook, halfpage

DISCRETE SEMICONDUCTORS

M3D087

PZT2222A

NPN switching transistor

Product data sheet
Supersedes data of 1997 Jun 02

1999 Apr 14

NXP Semiconductors Product data sheet

NPN switching transistor PZT2222A

FEATURES

• High current (max. 600 mA)

PINNING

PIN DESCRIPTION

• Low voltage (max. 40 V).
2, 4 collector

APPLICATIONS

• Switching and linear amplification.

DESCRIPTION

handbook, halfpage

NPN switching transistor in a SOT223 plastic package.

complement: PZT2907A.

PNP

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

1 base

3 emitter

123

Top view

4

2, 4

1

3

MAM287

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 1.15 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Device mounted on a printed-circuit board, single-sided copp er, tinplated, mounting pad for collector 1 cm2.
For

other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

1999 Apr 14 2

NXP Semiconductors Product data sheet

NPN switching transistor PZT2222A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

R

th j-s

Note

1. Device mounted on a printed-circuit board, single-sided copp er, tinplated, mounting pad for collector 1 cm2.
For

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

Switching times (between 10% and 90% levels); (see Fig.2)
t

on

t

d

t

r

t

off

t

s

t

f

thermal resistance from junction to ambient note 1 109 K/W
thermal resistance from junction to soldering point 28 K/W

other mounting conditions, see “Thermal conside rations for SOT223 in the General Part of associated

collector cut-off current IE = 0; VCB = 60 V − 10 nA

IE = 0; VCB = 60 V; T

= 125 °C − 10 µA

amb

emitter cut-off current IC = 0; VEB = 5 V − 10 nA
DC current gain IC = 0.1 mA; VCE = 10 V 35 −

IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 10 mA; VCE = 10 V;

= −55 °C

T

amb

35 −

IC = 150 mA; VCE = 1 V; note 1 50 −
IC = 150 mA; VCE = 10 V; not e 1 100 300
IC = 500 mA; VCE = 10 V; not e 1 40 −

collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV

IC = 500 mA; IB = 50 mA − 1 V

base-emitter saturation vo ltage IC = 150 mA; IB = 15 mA 0.6 1.2 V

IC = 500 mA; IB = 50 mA − 2 V
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF
emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 25 pF
transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz

turn-on time I
delay time − 10 ns

= 150 mA; I

Con

= −15 mA; T

I

Boff

= 15 mA;

Bon

= 25 °C

amb

− 35 ns

rise time − 25 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

1999 Apr 14 3

NXP Semiconductors Product data sheet

V

V

NPN switching transistor PZT2222A

BB

handbook, full pagewidth

oscilloscope

V

i

(probe)

450 Ω

R1

R2

R

B

CC

R

C

V

(probe)

o

DUT

MLB826

450 Ω

oscilloscope

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

1999 Apr 14 4

NXP Semiconductors Product data sheet

P

3

NPN switching transistor PZT2222A

PACKAGE OUTLINE

lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22

D

c

y

b

1

E

H

E

AB

X

v

M

A

4

Q

A

A

1

132

e

1

e

b

p

w

M

B

detail X

L

p

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1b

mm

A

0.10

1.8

0.01

1.5

OUTLINE

VERSION

SOT223 SC-73

p

0.80

0.60

IEC JEDEC EIAJ

b

3.1

2.9

1

cD

0.32

6.7

0.22

6.3

e

E

3.7

4.6

3.3

REFERENCES

e1HEL

2.3

7.3

6.7

1.1

0.7

Qywv

p

0.95

0.85

0.1 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

1999 Apr 14 5

NXP Semiconductors Product data sheet

NPN switching transistor PZT2222A

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or comple ting a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

1999 Apr 14 6

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 14 Document order number: 9397 750 05636