NXP PZT2222A Schematic [ru]
DATA SH EET
handbook, halfpage
DISCRETE SEMICONDUCTORS
M3D087
PZT2222A
NPN switching transistor
Product data sheet
Supersedes data of 1997 Jun 02
1999 Apr 14
NXP Semiconductors Product data sheet
NPN switching transistor PZT2222A
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
2, 4 collector
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT223 plastic package.
complement: PZT2907A.
PNP
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
1 base
3 emitter
123
Top view
4
2, 4
1
3
MAM287
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.15 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tinplated, mounting pad for collector 1 cm2.
For
other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14 2
NXP Semiconductors Product data sheet
NPN switching transistor PZT2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tinplated, mounting pad for collector 1 cm2.
For
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 109 K/W
thermal resistance from junction to soldering point 28 K/W
other mounting conditions, see “Thermal conside rations for SOT223 in the General Part of associated
collector cut-off current IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; T
= 125 °C − 10 µA
amb
emitter cut-off current IC = 0; VEB = 5 V − 10 nA
DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 10 mA; VCE = 10 V;
= −55 °C
T
amb
35 −
IC = 150 mA; VCE = 1 V; note 1 50 −
IC = 150 mA; VCE = 10 V; not e 1 100 300
IC = 500 mA; VCE = 10 V; not e 1 40 −
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV
IC = 500 mA; IB = 50 mA − 1 V
base-emitter saturation vo ltage IC = 150 mA; IB = 15 mA 0.6 1.2 V
IC = 500 mA; IB = 50 mA − 2 V
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF
emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 25 pF
transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz
turn-on time I
delay time − 10 ns
= 150 mA; I
Con
= −15 mA; T
I
Boff
= 15 mA;
Bon
= 25 °C
amb
− 35 ns
rise time − 25 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 14 3
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