Datasheet PZTA14, PZTA13 Datasheet (Siemens)

NPN Silicon Darlington Transistors PZTA 13

PZTA 14

● For general AF applications

● High collector current

● High current gain

● Complementary types: PZTA 63

PZTA 64 (PNP)

Type Ordering Code

Marking

(tape and reel)

PZTA 13
PZTA 14

PZTA 13
PZTA 14

Q62702-Z2033
Q62702-Z2034

Pin Configuration

1 2 3 4

B C E C

Package

SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage VCES V
Collector-base voltage VCB0
Emitter-base voltage VEB0

30
30

10
Collector current IC mA300
Peak collector current I
Base current I
Peak base current I
Total power dissipation, T

S = 124 ˚C

Junction temperature Tj ˚C

CM 500
B 100
BM 200

tot W

P

1.5

150

1)

Storage temperature range T

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 72 K/W

Junction - soldering point Rth JS ≤ 17

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

PZTA 13

PZTA 14

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CES 30 – –

C = 100 µA

Collector-base breakdown voltage

C = 100 µA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IC = 0

Collector-base cutoff current

CE = 30 V, IE = 0

V

CE = 30 V, IE = 0, TA = 150 ˚C

V

EB = 10 V, IC = 0

V

V

(BR)CB0 30 – –

V

(BR)EB0 10 – –

CB0

I

–
–

I

EB0 – – 100

–
–

100
10

hFE

C = 10 mA, VCE = 5 V PZTA 13

PZTA 14

C = 100 mA, VCE = 5 V PZTA 13

PZTA 14

Collector-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage

C = 100 mA, IB = 0.1 mA

1)

1)

VCEsat – – 1.5

VBEsat – – 2.0

5000
10000
10000
20000

–
–
–
–

–
–
–
–

VCollector-emitter breakdown voltage

nA

µA

nAEmitter-base cutoff current

–DC current gain

V

AC characteristics

C = 50 mA, VCE = 5 V, f = 100 MHz

f

T 125 – –

MHzTransition frequency

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2

PZTA 13

PZTA 14

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Transition frequency fT = f (IC)

CE = 5 V, f = 100 MHz

V

Collector cutoff current I

CE = 30 V

V

CB0 = f (TA)

DC current gain h

CE =5V

V

FE = f (IC)

Semiconductor Group 3

PZTA 13

PZTA 14

Collector-emitter saturation voltage

C = f (VCE sat)

I

FE = 1000

h

Base-emitter saturation voltage

C = f (VBE sat)

I

FE = 1000

h

Permissible pulse load Ptot max / Ptot DC = f (tp)

Semiconductor Group 4