NXP PBSS4160V Schematic [ru]
PBSS4160V
60 V, 1 A NPN low V
Rev. 03 — 11 December 2009 Product data sheet
1. Product profile
1.1 General description
Low V
PNP complement: PBSS5160V.
1.2 Features
Low collector-emitter saturation voltage V
High collector current capability IC and I
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
(BISS) transistor
CEsat
(BISS) NPN transistor in a SOT666 plastic package.
CEsat
CEsat
CM
Major application segments:
Automotive
Telecom infrastructure
Industrial
Power management:
DC-to-DC conversion
Supply line switching
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
R
CEsat
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm2 collector
mounting pad.
[2] Pulse test: t
collector-emitter voltage open base - - 60 V
j(max)
[1]
--1A
--2A
[2]
- 200 250 mΩ
collector current (DC)
peak collector current t = 1 ms or limited by T
equivalent on-resistance IC = 1 A; IB = 100 mA
≤ 300 μs; δ ≤ 0.02.
p
NXP Semiconductors
4
PBSS4160V
2. Pinning information
Table 2. Discrete pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 collector
3base
4emitter
3. Ordering information
Table 3. Ordering information
Type number Package
PBSS4160V - plastic surface mounted package; 6 leads SOT666
60 V, 1 A NPN low V
456
123
(BISS) transistor
CEsat
1, 2, 5, 6
3
4
sym01
Name Description Version
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160V 41
PBSS4160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 2 of 14
NXP Semiconductors
PBSS4160V
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
60 V, 1 A NPN low V
(BISS) transistor
CEsat
collector-base voltage open emitter - 80 V
collector-emitter
open base - 60 V
voltage
emitter-base voltage open collector - 5 V
collector current (DC)
peak collector current t = 1 ms or limited by
T
j(max)
[1]
-0.9A
[2]
1
-2A
base current (DC) - 300 mA
peak base current tp ≤ 300 μs; δ ≤ 0.02 - 1 A
total power dissipation T
amb
≤ 25 °C
[1]
- 300 mW
[2]
- 500 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
2
collector mounting pad.
0.6
P
tot
(W)
0.4
0.2
0
0 16012040 80
(1) FR4 PCB; 1 cm2 collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1. Power derating curves
001aaa714
(1)
(2)
T
(°C)
amb
PBSS4160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 3 of 14
NXP Semiconductors
001aaa715
PBSS4160V
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
thermal resistance from junction
to ambient
10
Z
th
(K/W)
10
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
3
(1)
(2)
(3)
2
10
(4)
(5)
(6)
(7)
(8)
(9)
(10)
60 V, 1 A NPN low V
in free air
2
collector mounting pad.
(BISS) transistor
CEsat
[1]
--415K/W
[2]
--250K/W
1
−1
10
−5
10
−4
10
−3
10
−2
−1
10
1
Mounted on FR4 PCB; standard footprint
(1) δ =1
(2) δ =0.75
(3) δ =0.5
(4) δ =0.33
(5) δ =0.2
(6) δ =0.1
(7) δ =0.05
(8) δ =0.02
(9) δ =0.01
(10) δ =0
Fig 2. Transient thermal impedance as a function of pulse time; typical values
1010
2
10
tp (s)
3
10
PBSS4160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 4 of 14
NXP Semiconductors
PBSS4160V
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
R
CEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
60 V, 1 A NPN low V
(BISS) transistor
CEsat
= 25 °C unless otherwise specified.
collector-base
cut-off current
collector-emitter
VCB = 60 V; IE = 0 A - - 100 nA
= 60 V; IE = 0 A;
V
CB
= 150 °C
T
j
-- 50μA
VCE = 60 V; VBE = 0 V - - 100 nA
cut-off current
emitter-base cut-off
VEB = 5 V; IC = 0 A - - 100 nA
current
DC current gain VCE = 5 V; IC = 1 mA 250 400 -
[1]
200 350 -
[1]
100 150 -
[1]
- 200 250 mV
collector-emitter
saturation voltage
base-emitter
= 5 V; IC = 500 mA
V
CE
= 5 V; IC = 1 A
V
CE
IC = 100 mA; IB = 1 mA - 90 110 mV
= 500 mA; IB = 50 mA - 110 140 mV
I
C
= 1 A; IB = 100 mA
I
C
IC = 1 A; IB = 50 mA - 0.95 1.1 V
saturation voltage
equivalent
IC = 1 A; IB = 100 mA
[1]
- 200 250 mΩ
on-resistance
base-emitter
VCE = 5 V; IC = 1 A - 0.82 0.9 V
turn-on voltage
delay time VCC = 10 V; IC = 0.5 A;
= 25 mA; I
I
rise time - 78 - ns
Bon
= −25 mA
Boff
-11-ns
turn-on time - 90 - ns
storage time - 340 - ns
fall time - 160 - ns
turn-off time - 500 - ns
transition frequency IC = 50 mA; VCE = 10 V;
150 220 - MHz
f=100MHz
collector
capacitance
VCB = 10 V; IE = Ie = 0 A;
f=1MHz
- 5.5 10 pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 5 of 14
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