PBSS4160U
60 V, 1 A NPN low V
Rev. 03 — 11 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN low V
Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160U.
1.2 Features
Low collector-emitter saturation voltage V
High collector current capability: IC and I
High collector current gain (hFE) at high I
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70)
CEsat
CEsat
CM
C
1.3 Applications
High voltage DC-to-DC conversion
High voltage MOSFET gate driving
High voltage motor control
High voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
R
CEsat
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: t
collector-emitter voltage open base - - 60 V
collector current (DC)
peak collector current single pulse; tp≤ 1ms--2A
collector-emitter saturation
resistance
≤ 300 μs; δ ≤ 0.02.
p
IC=1A; IB=100mA
[1]
--1A
[2]
- 230 280 mΩ
NXP Semiconductors
1
PBSS4160U
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1base
2emitter
3 collector
3. Ordering information
Table 3. Ordering information
Type number Package
PBSS4160U SC-70 plastic surface mounted package; 3 leads SOT323
60 V, 1 A NPN low V
3
12
(BISS) transistor
CEsat
1
sym02
3
2
Name Description Version
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160U 52*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 2 of 14
NXP Semiconductors
006aaa501
PBSS4160U
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on a ceramic PCB, Al
60 V, 1 A NPN low V
(BISS) transistor
CEsat
collector-base voltage open emitter - 80 V
collector-emitter voltage open base - 60 V
emitter-base voltage open collector - 5 V
collector current (DC)
[1]
-750mA
[2]
-930mA
[3]
-1A
peak collector current single pulse; tp≤ 1ms - 2 A
base current (DC) - 300 mA
peak base current single pulse; tp≤ 1ms - 1 A
total power dissipation T
≤ 25 °C
amb
[1]
-250mW
[2]
-350mW
[3]
-415mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
2
, standard footprint.
2O3
.
0.5
P
tot
(W)
(1)
0.4
(2)
0.3
(3)
0.2
0.1
0
0 16012040 80
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
T
(°C)
amb
2
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 3 of 14
NXP Semiconductors
PBSS4160U
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Z
th(j-a)
(K/W)
R
th(j-a)
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on a ceramic PCB, Al
3
10
δ = 1
0.75
0.50
0.33
0.20
2
10
0.10
0.05
60 V, 1 A NPN low V
in free air
, standard footprint.
2O3
(BISS) transistor
CEsat
[1]
--500K/W
[2]
--357K/W
[3]
--301K/W
--150K/W
2
.
006aaa502
0.02
10
0.01
0
1
−5
10
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (s)
10
FR4 PCB, standard footprint
Fig 2. Transi en t the rmal impe da n ce from junc tio n to ambient as a function of pulse time; typical values
3
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 4 of 14
NXP Semiconductors
PBSS4160U
3
10
Z
(K/W)
th(j-a)
10
δ = 1
0.75
0.50
2
10
1
10
−5
0.20
0.10
0.05
0.02
0.01
0.33
0
−4
10
FR4 PCB, mounting pad for collector 1 cm
60 V, 1 A NPN low V
−3
10
−2
2
−1
10
1
1010
(BISS) transistor
CEsat
006aaa503
2
10
tp (s)
10
Fig 3. Transi en t the rmal impe da n ce from junc tio n to ambient as a function of pulse time; typical values
3
10
006aaa504
3
Z
th(j-a)
(K/W)
δ = 1
0.75
0.50
2
10
10
1
10
−5
0.20
0.10
0.05
0.02
0.01
0.33
0
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (s)
10
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transi en t the rmal impe da n ce from junc tio n to ambient as a function of pulse time; typical values
3
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 5 of 14
NXP Semiconductors
PBSS4160U
7. Characteristics
Table 7. Characteristics
T
= 25 °C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
collector-base cut-off
current
collector-emitter cut-off
60 V, 1 A NPN low V
VCB=60V; IE= 0 A - - 100 nA
=60V; IE=0A;
V
CB
=150°C
T
j
VCE=60V; VBE= 0 V - - 100 nA
--50μA
(BISS) transistor
CEsat
current
emitter-base cut-off current VEB=5V; IC= 0 A - - 100 nA
DC current gain VCE=5V; IC= 1 mA 250 500 -
[1]
200 420 -
[1]
100 180 -
- 120 150 mV
collector-emitter saturation
voltage
=5V; IC=500mA
V
CE
=5V; IC=1A
V
CE
IC= 100 mA; IB= 1 mA - 90 115 mV
= 500 mA;
I
C
IB=50mA
[1]
- 230 280 mV
[1]
- 230 280 mΩ
collector-emitter saturation
=1A; IB=100mA
I
C
IC=1A; IB=100mA
resistance
base-emitter saturation
IC=1A; IB=50mA
[1]
- 0.95 1.1 V
voltage
base-emitter turn-on
VCE=5V; IC=1A
[1]
- 0.85 0.9 V
voltage
delay time IC=0.5A;
=25mA;
I
rise time - 78 - ns
turn-on time - 90 - ns
I
Bon
Boff
= −25 mA
-11-ns
storage time - 340 - ns
fall time - 160 - ns
turn-off time - 500 - ns
transition frequency VCE=10V;
150 220 - MHz
IC=50mA;
f=100MHz
collector capacitance VCB=10V;
=0A; f=1MHz
I
E=ie
- 5.5 10 pF
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 6 of 14
NXP Semiconductors
PBSS4160U
800
h
FE
600
400
200
0
−1
10
(1)
(2)
(3)
110
10
2
006aaa505
3
10
IC (mA)
4
10
VCE =5V
(1) T
(2) T
(3) T
= 100 °C
amb
= 25 °C
amb
= −55 °C
amb
Fig 5. DC current gain as a function of collector
current; typical values
60 V, 1 A NPN low V
1.2
V
BE
(V)
1.0
0.8
0.6
0.4
0.2
−1
10
V
(1) T
(2) T
(3) T
110
=5V
CE
= −55 °C
amb
= 25 °C
amb
= 100 °C
amb
(1)
(2)
(3)
10
(BISS) transistor
CEsat
006aaa506
2
3
10
(mA)
I
C
4
10
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa507
3
10
IC (mA)
4
10
V
CEsat
(mV)
1
−1
10
(1)
(2)
(3)
−2
10
−1
10
110
10
2
IC/IB =20
(1) T
(2) T
(3) T
= 100 °C
amb
= 25 °C
amb
= −55 °C
amb
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa508
3
10
IC (mA)
4
10
V
CEsat
(V)
10
10
10
(1) I
(2) I
(3) I
1
−1
−2
−3
−1
10
T
amb
C/IB
C/IB
C/IB
(1)
(2)
(3)
110
10
2
= 25 °C
= 100
= 50
= 10
Fig 8. Collector-emitter satura tion voltage as a
function of collector current; typical values
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 7 of 14
NXP Semiconductors
006aaa509
006aaa510
PBSS4160U
1.2
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
−1
10
(1)
(2)
(3)
110
10
2
3
10
(mA)
I
C
4
10
IC/IB =20
(1) T
(2) T
(3) T
= −55 °C
amb
= 25 °C
amb
= 100 °C
amb
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
R
CEsat
(Ω)
60 V, 1 A NPN low V
3
10
2
10
10
1
−1
10
−1
10
I
(1) T
(2) T
(3) T
110
=20
C/IB
= 100 °C
amb
= 25 °C
amb
= −55 °C
amb
10
(BISS) transistor
CEsat
(1)
(2)
(3)
10
3
IC (mA)
2
4
10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
2.0
I
C
(A)
1.6
1.2
0.8
0.4
0
05312 4
T
= 25 °CT
amb
IB (mA) = 65.0
52.0
39.0
26.0
13.0
006aaa511
58.5
45.5
32.5
19.5
6.5
VCE (V)
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa512
(1)
(2)
3
10
IC (mA)
(3)
4
10
R
10
CEsat
(Ω)
10
10
(1) I
(2) I
(3) I
3
2
10
1
−1
−1
10
110
= 25 °C
amb
= 100
C/IB
= 50
C/IB
= 10
C/IB
10
2
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 8 of 14
NXP Semiconductors
PBSS4160U
8. Test information
90 %
10 %
90 %
60 V, 1 A NPN low V
I
B
I
(100 %)
Bon
I
Boff
I
C
(BISS) transistor
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
10 %
t
t
d
r
t
on
Fig 13. BISS transistor switching time definition
V
BB
R
B
IC= 0.5 A; I
oscilloscope
V
I
=25mA; I
Bon
R
(probe)
450 Ω
R2
R1
= −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Boff
Fig 14. Test circuit for switching tim es
IC (100 %)
t
t
s
t
off
V
CC
C
V
o
(probe)
oscilloscope
450 Ω
DUT
mlb826
t
f
006aaa003
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 9 of 14
NXP Semiconductors
PBSS4160U
9. Package outline
Fig 15. Package outline SOT323 (SC-70)
10. Packing information
2.2
2.0
60 V, 1 A NPN low V
2.2
1.8
3
1.35
1.15
12
1.3
0.4
0.3
0.45
0.15
1.1
0.8
0.25
0.10
(BISS) transistor
CEsat
04-11-04Dimensions in mm
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PBSS4160U SOT323 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, see Section 14.
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 10 of 14
NXP Semiconductors
9
PBSS4160U
11. Soldering
0.60
0.852.35
(3×)
0.55
(3×)
Fig 16. Reflow soldering footprint
3
2.65
1.30
2.40
4.60
4.00
1.15
60 V, 1 A NPN low V
1.3250.75
2
0.50
1.90
(3×)
1
msa429
(BISS) transistor
CEsat
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
2.103.65
preferred transport direction during soldering
Fig 17. Wave soldering footprint
2
3
1
0.90
(2×)
2.70
solder lands
solder resist
occupied area
Dimensions in mm
msa41
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 11 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
(BISS) transistor
CEsat
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS4160U_3 20091211 Product data sheet - PBSS4160U_2
Modifications:
PBSS4160U_2 20050719 Product data sheet - PBSS4160U_1
PBSS4160U_1 20040423 Objective data sheet - -
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 16 “Reflow soldering footprint”: updated
• Figure 17 “Wave soldering footprint”: updated
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 12 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low V
(BISS) transistor
CEsat
13. Legal information
13.1 Data sheet status
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[1][2]
Product status
[3]
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.
, including those pertaining to warranty,
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4160U_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 11 December 2009 13 of 14
NXP Semiconductors
PBSS4160U
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
60 V, 1 A NPN low V
(BISS) transistor
CEsat
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBSS4160U_3
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