NXP MMBT2222A Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
MMBT2222A
NPN switching transistor
Product data sheet
Supersedes data of 2000 Apr 11
2004 Jan 16
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic pack age.
complement: PMBT2907A.
PNP
MARKING
T YPE NUMBER MARKING CODE
(1)
MMBT2222A 7C*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
MMBT2222A − plastic surface mounted pack ag e; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = 100 µA; VCE = 5 V;
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tj = 125 °C − 10 µA
emitter cut-off current IC = 0; VEB = 5 V − 10 nA
DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 10 mA; VCE = 10 V;
= −55 °C
T
amb
35 −
IC = 150 mA; VCE = 10 V 100 300
IC = 150 mA; VCE = 1 V 50 −
IC = 500 mA; VCE = 10 V 40 −
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 300 mV
IC = 500 mA; IB = 50 mA; note 1 − 1 V
base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V
IC = 500 mA; IB = 50 mA; note 1 − 2 V
collector capacitance IE = ie = 0; VCB = 10 V;
= 1 MHz
f
emitter capacitance IC = ic = 0; VEB = 500 mV;
= 1 MHz
f
transition frequency IC = 20 mA; VCE = 20 V;
= 100 MHz
f
− 8 pF
− 25 pF
300 − MHz
− 4 dB
= 1 kΩ; f = 1 kHz
R
S
turn-on time I
delay time − 15 ns
= 150 mA; I
Con
= −15 mA
I
Boff
= 15 mA;
Bon
− 35 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 16 3
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