NXP BZV49-C10, BZV49-C11, BZV49-C12, BZV49-C13, BZV49-C15 Schematic [ru]
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DATA SH EET
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DISCRETE SEMICONDUCTORS
M3D109
BZV49 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 11
2005 Feb 03
NXP Semiconductors Product data sheet
31
Voltage regulator diodes BZV49 series
FEATURES
• Total power dissipation: max. 1 W
• Tolerance series: approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
40 W.
max.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37
nominal working voltages from 2.4
to BZV49-C75).
ORDERING INFORMATION
T YPE NUMBER
BZV49-C2V4 to
BZV49-C75
note 1
NAME DESCRIPTION VERSION
SC-62 plastic surface mounted package; collector pad for good heat
to 75 V (BZV49-C2V4
transfer; 3 leads
types with
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 anode
321
Fig.1 Simplified outline (SOT89) and symbol.
PACKAGE
2
sym096
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y
BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y
BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y
BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y
BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y
BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y
BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y
BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − −
BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − −
BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − −
2005 Feb 03 2
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating Sys tem (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
continuous forward current − 250 mA
non-repetitive peak reverse current tp = 100 μs; square wave;
T
= 25 °C prior to surge
j
total power dissipation T
non-repetitive peak reverse power
dissipation
= 25 °C; note 1 − 1 W
amb
tp = 100 μs; square wave;
= 25 °C prior to surge; see Fig.2
T
j
see Table
“Per type”
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
Total series
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF = 50 mA; see Fig.3 1 V
2005 Feb 03 3
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