DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BZV49 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 11
2005 Feb 03
NXP Semiconductors Product data sheet
31
Voltage regulator diodes BZV49 series
FEATURES
• Total power dissipation: max. 1 W
• Tolerance series: approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
40 W.
max.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37
nominal working voltages from 2.4
to BZV49-C75).
ORDERING INFORMATION
T YPE NUMBER
BZV49-C2V4 to
BZV49-C75
note 1
NAME DESCRIPTION VERSION
SC-62 plastic surface mounted package; collector pad for good heat
to 75 V (BZV49-C2V4
transfer; 3 leads
types with
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 anode
321
Fig.1 Simplified outline (SOT89) and symbol.
PACKAGE
2
sym096
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y
BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y
BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y
BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y
BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y
BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y
BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y
BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − −
BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − −
BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − −
2005 Feb 03 2
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating Sys tem (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
continuous forward current − 250 mA
non-repetitive peak reverse current tp = 100 μs; square wave;
T
= 25 °C prior to surge
j
total power dissipation T
non-repetitive peak reverse power
dissipation
= 25 °C; note 1 − 1 W
amb
tp = 100 μs; square wave;
= 25 °C prior to surge; see Fig.2
T
j
see Table
“Per type”
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
Total series
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF = 50 mA; see Fig.3 1 V
2005 Feb 03 3
2005 Feb 03 4
Per type
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
BZV49-
CXXX
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
DIFFERENTIAL
RESISTANCE
(Ω)
r
dif
I
at
Ztest
TEMP. COEFF.
S
(mV/K)
Z
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
(mA)
I
Ztest
DIODE CAP.
C
(pF)
d
= 1 MHz;
at f
= 0 V
at V
R
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
NON-REPETITIVE PEAK
REVERSE CURRENT
tp = 100 μs;
at
T
VR
amb
(V)
2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0
3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0
3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V7 4.4 5.0 50 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0
5V1 4.8 5.4 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0
5V6 5.2 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0
6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0
10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5
15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0
16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5
18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5
20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5
22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25
24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25
I
ZSM
= 25 °C
(A)
2005 Feb 03 5
BZV49-
CXXX
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
(Ω)
r
dif
at I
Ztest
TEMP. COEFF.
S
(mV/K)
Z
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
C
(pF)
d
at f = 1 MHz;
= 0 V
at V
R
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
REVERSE
CURRENT at
REVERSE
VOLTAGE
(μA)
I
R
V
(V)
R
27 25.1 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0
30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0
33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9
36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8
39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7
43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6
47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5
51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4
56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3
62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3
68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25
75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2
NON-REPETITIVE PEAK
REVERSE CURRENT
I
(A)
ZSM
= 100 μs;
at t
p
T
= 25 °C
amb
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
thermal resistance from junction to tie-point 15 K/W
thermal resistance from junction to ambient note 1 125 K/W
3
10
handbook, halfpage
P
ZSM
(W)
2
10
10
1
−1
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
(1)
(2)
1 duration (ms)
MBG801
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
300
handbook, halfpage
I
F
(mA)
200
100
0
10
0.6 1
Tj = 25 °C.
0.8
MBG781
VF (V)
Fig.3 Forward current as a function of forward
voltage; typical values.
2005 Feb 03 6
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
handbook, full pagewidth
1
S
Z
(mV/K)
0
−1
−2
−3
-3
10
BZV49-C2V4 to C4V3.
= 25 to 150 °C.
T
j
4V3
3V9
3V6
3V3
3V0
2V7
2V4
-2
10
-1
10
IZ (A)
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG927
1
10
handbook, halfpage
S
Z
(mV/K)
5
0
−5
02016
BZV49-C4V7 to C10.
T
= 25 to 150 °C.
j
10
9V1
8V2
7V5
6V8
4812
6V2
5V6
5V1
4V7
MBG924
IZ (mA)
Fig.5 Temperature coefficient as a function of
working current; typical values.
2005 Feb 03 7
NXP Semiconductors Product data sheet
9
Voltage regulator diodes BZV49 series
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
E
e
e
1
1.5
2005 Feb 03 8
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This doc ument contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specific ation.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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(1)
PRODUCT
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(2)
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development.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2005 Feb 03 9
60134) may cause permanent damage to
NXP Semiconductors
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Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926
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