NXP BZT52H-B10, BZT52H-B11, BZT52H-B12, BZT52H-B13, BZT52H-B15 Schematic [ru]

2

BZT52H series

Single Zener diodes in a SOD123F package

Rev. 3 — 7 December 2010 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.

1.2 Features and benefits

 Total power dissipation: ≤ 83 0 mW  Low differential resistance
 Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

 Small plastic package suitable for

surface-mounted design

 AEC-Q101 qualified

1.3 Applications

 General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

F

P

tot

[1] Pulse test: tp≤ 300μs; δ≤0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

forward voltage IF=10mA
total power dissipation T

footprint.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode
2 anode

amb

≤ 25 °C

[1]

[1]

--0.9V

[2]

--375mW

[3]

--830mW

21

1

2

006aaa15

[1] The marking bar indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZT52H-B2V4 to
BZT52H-C75

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

[1]

4. Marking

BZT52H series

Single Zener diodes in a SOD123F package

Name Description Version

- plastic surface-mounted package; 2 leads SOD123F

code

Type number Marking

code

Ty pe numb er Marking

code

Type number Marking

code

Table 4. Marking codes

Type number Marking

BZT52H-B2V4 DC BZT52H-B15 DX BZT52H-C2V4 B3 BZT52H-C15 BN
BZT52H-B2V7 DD BZT52H-B16 DY BZT52H-C2V7 B4 BZT52H-C16 BP
BZT52H-B3V0 DE BZT52H-B18 DZ BZT52H-C3V0 B5 BZT52H-C18 BQ
BZT52H-B3V3 DF BZT52H-B20 E1 BZT52H-C3V3 B6 BZT52H-C20 BR
BZT52H-B3V6 DG BZT52H-B22 E2 BZT52H-C3V6 B7 BZT52H-C22 BS
BZT52H-B3V9 DH BZT52H-B24 E3 BZT52H-C3V9 B8 BZT52H-C24 BT
BZT52H-B4V3 DJ BZT52H-B27 E4 BZT52H-C4V3 B9 BZT52H-C27 BU
BZT52H-B4V7 DK BZT52H-B30 E5 BZT52H-C4V7 BA BZT52H-C30 BV
BZT52H-B5V1 DL BZT52H-B33 E6 BZT52H-C5V1 BB BZT52H-C33 BW
BZT52H-B5V6 DM BZT52H-B36 E7 BZT52H-C5V6 BC BZT52H-C36 BX
BZT52H-B6V2 DN BZT52H-B39 E8 BZT52H-C6V2 BD BZT52H-C39 BY
BZT52H-B6V8 DP BZT52H-B43 E9 BZT52H-C6V8 BE BZT52H-C43 BZ
BZT52H-B7V5 DQ BZT52H-B47 EA BZT52H-C7V5 BF BZT52H-C47 C1
BZT52H-B8V2 DR BZT52H-B51 EB BZT52H-C8V2 BG BZT52H-C51 C2
BZT52H-B9V1 DS BZT52H-B56 EC BZT52H-C9V1 BH BZT52H-C56 C3
BZT52H-B10 DT BZT52H-B62 ED BZT52H-C10 BJ BZT52H-C62 C4
BZT52H-B11 DU BZT52H-B68 EE BZT52H-C11 BK BZT52H-C68 C5
BZT52H-B12 DV BZT52H-B75 EF BZT52H-C12 BL BZT52H-C75 C6
BZT52H-B13 DW - - BZT52H-C13 BM - -

BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 3 — 7 December 2010 2 of 13

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

I

F

I

ZSM

P

ZSM

P

tot

T

j

T

amb

T

stg

[1] tp=100μs; square wave; Tj=25°C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

BZT52H series

Single Zener diodes in a SOD123F package

forward current - 250 mA
non-repetitive peak

reverse current

non-repetitive peak
reverse power dissipation

total power dissipation T

amb

≤ 25 °C

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

- see

Table 8, 9

10

and

[1]

-40W

[2]

- 375 mW

[3]

- 830 mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

in free air

[1]

--330K/W

[2]

--150K/W

[3]

--70K/W

BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 3 — 7 December 2010 3 of 13

NXP Semiconductors

7. Characteristics

Table 7. Ch aracteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

F

[1] Pulse test: tp≤ 300 μs; δ≤0.02.

forward voltage IF=10mA

BZT52H series

Single Zener diodes in a SOD123F package

[1]

--0.9V

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24

Tj=25°C unless otherwise specified.

BZT52H

-xxx

Sel Working

voltage

(V);

V

Z

IZ=5mA

Maximum differential
resistance r

dif

(Ω)

Reverse
current IR(μA)

Temperature
coefficient

(mV/K);

S

Z

IZ=5mA

Diode
capacitance

[1]

(pF)

C

d

Non-repetitive
peak reverse
current
I

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0

C2.22.6

2V7 B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.0

C2.52.9

3V0 B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.0

C2.83.2

3V3 B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.0

C3.13.5

3V6 B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.0

C3.43.8

3V9 B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.0

C3.74.1

4V3 B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.0

C4.04.6

4V7 B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.0

C4.45.0

5V1 B 5.0 5.2 480 60 2 2 −2.7 1.2 300 6.0

C4.85.4

5V6 B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0

C5.26.0

6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0

C5.86.6

6V8 B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.0

C6.47.2

7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.0

C7.07.9

8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.0

C7.78.7

ZSM

(A)

[2]

BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 3 — 7 December 2010 4 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24

…continued

Tj=25°C unless otherwise specified.

BZT52H

-xxx

Sel Working

voltage
VZ(V);

=5mA

I

Z

Maximum differential
resistance r

dif

(Ω)

Reverse
current IR(μA)

Temperature
coefficient
SZ(mV/K);

=5mA

I

Z

Diode
capacitance
Cd(pF)

[1]

Non-repetitive
peak reverse
current
I

ZSM

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

9V1 B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0

C8.59.6

10 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5

C 10.4 11.6

12 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5

C 11.4 12.7

13 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5

C 12.4 14.1

15 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0

C 13.8 15.6

16 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5

C 15.3 17.1

18 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5

C 16.8 19.1

20 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5

C 18.8 21.2

22 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25

C 20.8 23.3

24 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25

C 22.8 25.6

(A)

[2]

[1] f = 1 MHz; VR=0V.

= 100 μs; T

[2] t

p

BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 3 — 7 December 2010 5 of 13

amb

=25°C.