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BZT52H series

Single Zener diodes in a SOD123F package

Rev. 3 — 7 December 2010 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Total power dissipation: ≤ 83 0 mW  Low differential resistance  Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

 Small plastic package suitable for

surface-mounted design

 AEC-Q101 qualified

1.3 Applications

 General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

[1] Pulse test: tp≤ 300μs; δ≤0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

forward voltage IF=10mA total power dissipation T

footprint.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode 2 anode

amb

≤ 25 °C

[1]

--0.9V

[2]

--375mW

[3]

--830mW

006aaa15

[1] The marking bar indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZT52H-B2V4 to BZT52H-C75

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

[1]

4. Marking

BZT52H series

Single Zener diodes in a SOD123F package

Name Description Version

- plastic surface-mounted package; 2 leads SOD123F

code

Type number Marking

code

Ty pe numb er Marking

code

Type number Marking

code

Table 4. Marking codes

Type number Marking

BZT52H-B2V4 DC BZT52H-B15 DX BZT52H-C2V4 B3 BZT52H-C15 BN BZT52H-B2V7 DD BZT52H-B16 DY BZT52H-C2V7 B4 BZT52H-C16 BP BZT52H-B3V0 DE BZT52H-B18 DZ BZT52H-C3V0 B5 BZT52H-C18 BQ BZT52H-B3V3 DF BZT52H-B20 E1 BZT52H-C3V3 B6 BZT52H-C20 BR BZT52H-B3V6 DG BZT52H-B22 E2 BZT52H-C3V6 B7 BZT52H-C22 BS BZT52H-B3V9 DH BZT52H-B24 E3 BZT52H-C3V9 B8 BZT52H-C24 BT BZT52H-B4V3 DJ BZT52H-B27 E4 BZT52H-C4V3 B9 BZT52H-C27 BU BZT52H-B4V7 DK BZT52H-B30 E5 BZT52H-C4V7 BA BZT52H-C30 BV BZT52H-B5V1 DL BZT52H-B33 E6 BZT52H-C5V1 BB BZT52H-C33 BW BZT52H-B5V6 DM BZT52H-B36 E7 BZT52H-C5V6 BC BZT52H-C36 BX BZT52H-B6V2 DN BZT52H-B39 E8 BZT52H-C6V2 BD BZT52H-C39 BY BZT52H-B6V8 DP BZT52H-B43 E9 BZT52H-C6V8 BE BZT52H-C43 BZ BZT52H-B7V5 DQ BZT52H-B47 EA BZT52H-C7V5 BF BZT52H-C47 C1 BZT52H-B8V2 DR BZT52H-B51 EB BZT52H-C8V2 BG BZT52H-C51 C2 BZT52H-B9V1 DS BZT52H-B56 EC BZT52H-C9V1 BH BZT52H-C56 C3 BZT52H-B10 DT BZT52H-B62 ED BZT52H-C10 BJ BZT52H-C62 C4 BZT52H-B11 DU BZT52H-B68 EE BZT52H-C11 BK BZT52H-C68 C5 BZT52H-B12 DV BZT52H-B75 EF BZT52H-C12 BL BZT52H-C75 C6 BZT52H-B13 DW - - BZT52H-C13 BM - -

Product data sheet Rev. 3 — 7 December 2010 2 of 13

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

ZSM

tot

amb

stg

[1] tp=100μs; square wave; Tj=25°C prior to surge. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

BZT52H series

Single Zener diodes in a SOD123F package

forward current - 250 mA non-repetitive peak

reverse current

non-repetitive peak reverse power dissipation

total power dissipation T

amb

≤ 25 °C

junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

- see

Table 8, 9

and

[1]

-40W

[2]

- 375 mW

[3]

- 830 mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab.

thermal resistance from junction to ambient

thermal resistance from junction to solder point

in free air

[1]

--330K/W

[2]

--150K/W

[3]

--70K/W

Product data sheet Rev. 3 — 7 December 2010 3 of 13

NXP Semiconductors

7. Characteristics

Table 7. Ch aracteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

[1] Pulse test: tp≤ 300 μs; δ≤0.02.

forward voltage IF=10mA

BZT52H series

Single Zener diodes in a SOD123F package

[1]

--0.9V

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24

Tj=25°C unless otherwise specified.

BZT52H

-xxx

Sel Working

voltage

(V);

IZ=5mA

Maximum differential resistance r

dif

(Ω)

Reverse current IR(μA)

Temperature coefficient

(mV/K);

IZ=5mA

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current I

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0

C2.22.6

2V7 B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.0

C2.52.9

3V0 B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.0

C2.83.2

3V3 B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.0

C3.13.5

3V6 B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.0

C3.43.8

3V9 B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.0

C3.74.1

4V3 B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.0

C4.04.6

4V7 B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.0

C4.45.0

5V1 B 5.0 5.2 480 60 2 2 −2.7 1.2 300 6.0

C4.85.4

5V6 B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0

C5.26.0

6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0

C5.86.6

6V8 B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.0

C6.47.2

7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.0

C7.07.9

8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.0

C7.78.7

ZSM

(A)

[2]

Product data sheet Rev. 3 — 7 December 2010 4 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24

…continued

Tj=25°C unless otherwise specified.

BZT52H

-xxx

Sel Working

voltage VZ(V);

=5mA

Maximum differential resistance r

dif

(Ω)

Reverse current IR(μA)

Temperature coefficient SZ(mV/K);

=5mA

Diode capacitance Cd(pF)

[1]

Non-repetitive peak reverse current I

ZSM

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

9V1 B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0

C8.59.6

10 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5

C 10.4 11.6

12 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5

C 11.4 12.7

13 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5

C 12.4 14.1

15 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0

C 13.8 15.6

16 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5

C 15.3 17.1

18 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5

C 16.8 19.1

20 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5

C 18.8 21.2

22 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25

C 20.8 23.3

24 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25

C 22.8 25.6

(A)

[2]

[1] f = 1 MHz; VR=0V.

= 100 μs; T

[2] t

Product data sheet Rev. 3 — 7 December 2010 5 of 13

amb

=25°C.

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51

Tj=25°C unless otherwise specified.

BZT52H

-xxx

Sel Working

voltage

(V);

IZ=2mA

Maximum differential resistance r

dif

(Ω)

Reverse current IR(μA)

Temperature coefficient

(mV/K);

IZ=5mA

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current I

Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max

27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0

C 25.1 28.9

30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 50 1.0

C 28.0 32.0

33 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9

C 31.0 35.0

36 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8

C 34.0 38.0

39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7

C 37.0 41.0

43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6

C 40.0 46.0

47 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5

C 44.0 50.0

51 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4

C 48.0 54.0

ZSM

(A)

[2]

[1] f = 1 MHz; VR=0V.

= 100 μs; T

[2] t

Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75

=25

C unless otherwise specified.

BZT52H

Sel Working

-xxx

=25°C.

amb

voltage VZ(V);

=2mA

Maximum differential resistance r

dif

(Ω)

Reverse current IR(μA)

Temperature coefficient SZ(mV/K);

=5mA

Diode capacitance Cd(pF)

[1]

Non-repetitive peak reverse current I

ZSM

Min Max IZ=0.5mA IZ=2mA Max VR(V) Min Max Max Max

56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.3

C 52.0 60.0

62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 35 0.3

C 58.0 66.0

68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 35 0.25

C 64.0 72.0

75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.20

C 70.0 79.0

[1] f = 1 MHz; VR=0V. [2] tp= 100 μs; T

amb

=25°C.

(A)

[2]

Product data sheet Rev. 3 — 7 December 2010 6 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

tp (ms)

mbg801

ZSM

(W)

−1

(1)

(2)

(1) Tj=25°C (prior to surge)

= 150 °C (prior to surge)

(2) T

Fig 1. Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum values

mbg783

3V9

3V6

3V3

3V0

(mV/K)

4V3

−1

−2

300

(mA)

200

100

0.6 10.8

mbg781

VF (V)

Tj=25°C

Fig 2. Forward current as a function of forward

voltage; typical values

mbg782

(mV/K)

9V1

8V2 7V5 6V8

6V2

5V6 5V1

4V7

2V4 2V7

−3 060

20 40

(mA)

BZT52H-B/C2V4 to BZT52H-B/C4V3

=25°C to 150 °C

Fig 3. Temperature coefficient as a function of

working current; typical values

−5 02016

4812

(mA)

BZT52H-B/C4V7 to BZT52H-B/C12 Tj=25°C to 150 °C

Fig 4. Temperature coefficient as a function of

working current; typical values

Product data sheet Rev. 3 — 7 December 2010 7 of 13

NXP Semiconductors

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9. Package outline

BZT52H series

Single Zener diodes in a SOD123F package

Fig 5. Package outline SOD123F

10. Packing information

Table 11. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BZT52H-B2V4 to BZT52H-C75

1.2

1.0

0.25

0.10

04-11-29Dimensions in mm

[1]

3.6

3.4

2.7

2.5

1.7

1.5

0.70

0.55

0.35

3000 10000

SOD123F 4 mm pitch, 8 mm tape and reel -115 -135

[1] For further information and the availability of packing methods, see Section 14.

Product data sheet Rev. 3 — 7 December 2010 8 of 13

NXP Semiconductors

11. Soldering

Fig 6. Reflow soldering footprint SOD123F

Single Zener diodes in a SOD123F package

4.4

2.9

1.6

1.1

(2×)

Reflow soldering is the only recommended soldering method. Dimensions in mm.

1.1 1.22.1

BZT52H series

solder lands

solder resist

solder paste

occupied area

Product data sheet Rev. 3 — 7 December 2010 9 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

12. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BZT52H_SER v.3 20101207 Product data sheet - BZT52H_SER v.2 Modifications: • Added selection B.

Section 1.2 “Features and benefits”: amended.

•

Table 2 “Pinning”: graphic symbol updated. Section 8 “Test information”: added.

•

Section 13 “Legal information”: updated.

•

BZT52H_SER v.2 20091115 Product data sheet - BZT52H_SER v.1 BZT52H_SER v.1 20051222 Product data sheet - -

Product data sheet Rev. 3 — 7 December 2010 10 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL

[1][2]

Product status

http://www.nxp.com.

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

http://www.nxp.com/profile/terms

, unless otherwise

Product data sheet Rev. 3 — 7 December 2010 11 of 13

NXP Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 3 — 7 December 2010 12 of 13

NXP Semiconductors

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information . . . . . . . . . . . . . . . . . . . . . 12

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BZT52H series

Single Zener diodes in a SOD123F package

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 December 2010

Document identifier: BZT52H_SER

NXP BZT52H-B10, BZT52H-B11, BZT52H-B12, BZT52H-B13, BZT52H-B15 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Test information

8.1 Quality information

9. Package outline

10. Packing information

11. Soldering

12. Revision history

13. Legal information

13.1 Data sheet status

13.2 Definitions

13.3 Disclaimers

13.4 Trademarks

14. Contact information

15. Contents