NXP BZB84-B10, BZB84-B11, BZB84-B12, BZB84-B13, BZB84-B15 Schematic [ru]
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BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009 Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
n Non-repetitive peak reverse power
dissipation: ≤ 40 W
n Total power dissipation: ≤ 300 mW n Dual common anode configuration
n Two tolerance series:
B=±2%andC=±5%
n Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
n Small plastic package suitable for
surface-mounted design
n AEC-Q101 qualified
1.3 Applications
n General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
P
ZSM
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] tp= 100 µs; square wave; Tj=25°C prior to surge
forward voltage IF=10mA
non-repetitive peak reverse
power dissipation
[1]
- - 0.9 V
[2]
--40W
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
3. Ordering information
Table 3. Ordering information
Type number Package
BZB84-B2V4 to
BZB84-C75
[1]
BZB84 series
Dual Zener diodes
3
12
Name Description Version
- plastic surface-mounted package; 3 leads SOT23
3
12
006aaa154
4. Marking
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
Table 4. Marking codes
Type number Marking code
BZB84-B2V4 V9* BZB84-C2V4 U9*
BZB84-B2V7 VA* BZB84-C2V7 UA*
BZB84-B3V0 VB* BZB84-C3V0 UB*
BZB84-B3V3 VC* BZB84-C3V3 UC*
BZB84-B3V6 VD* BZB84-C3V6 UD*
BZB84-B3V9 VE* BZB84-C3V9 UE*
BZB84-B4V3 VF* BZB84-C4V3 UF*
BZB84-B4V7 VG* BZB84-C4V7 UG*
BZB84-B5V1 VH* BZB84-C5V1 UH*
BZB84-B5V6 VK* BZB84-C5V6 UK*
BZB84-B6V2 VL* BZB84-C6V2 UL*
BZB84-B6V8 VM* BZB84-C6V8 UM*
BZB84-B7V5 VN* BZB84-C7V5 UN*
BZB84-B8V2 VP* BZB84-C8V2 UP*
BZB84-B9V1 VR* BZB84-C9V1 UR*
[1]
Type number Marking code
[1]
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 2 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 4. Marking codes
Type number Marking code
…continued
[1]
Type number Marking code
BZB84-B10 VS* BZB84-C10 US*
BZB84-B11 VT* BZB84-C11 UT*
BZB84-B12 VU* BZB84-C12 UU*
BZB84-B13 VV* BZB84-C13 UV*
BZB84-B15 VW* BZB84-C15 UW*
BZB84-B16 PT* BZB84-C16 PB*
BZB84-B18 PU* BZB84-C18 PC*
BZB84-B20 RP* BZB84-C20 RQ*
BZB84-B22 PV* BZB84-C22 PD*
BZB84-B24 PW* BZB84-C24 PE*
BZB84-B27 PX* BZB84-C27 PF*
BZB84-B30 PY* BZB84-C30 PG*
BZB84-B33 PZ* BZB84-C33 PH*
BZB84-B36 RA* BZB84-C36 PJ*
BZB84-B39 RB* BZB84-C39 PK*
BZB84-B43 RC* BZB84-C43 PL*
BZB84-B47 RD* BZB84-C47 PM*
BZB84-B51 RE* BZB84-C51 PN*
BZB84-B56 RF* BZB84-C56 PP*
BZB84-B62 RG* BZB84-C62 PQ*
BZB84-B68 RH* BZB84-C68 PR*
BZB84-B75 RJ* BZB84-C75 PS*
[1]
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
I
F
I
ZSM
P
ZSM
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 3 of 14
forward current - 200 mA
non-repetitive peak
reverse current
[1]
- see
Table 8, 9,
10 and 11
non-repetitive peak
[1]
-40W
reverse power dissipation
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
P
tot
T
j
T
amb
T
stg
[1] tp= 100 µs; square wave; Tj=25°C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
total power dissipation T
junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; single diode loaded
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
…continued
≤ 25 °C
amb
in free air
[2]
- 300 mW
[1]
- - 417 K/W
[2]
- - 100 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering points at pins 1 and 2.
7. Characteristics
Table 7. Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward voltage IF=10mA
[1]
- - 0.9 V
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 4 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24
Tj=25°C unless otherwise specified.
BZB84Bxxx
2V4 2.35 2.45 600 100 50 1 −3.5 0 450 6.0
2V7 2.65 2.75 600 100 20 1 −3.5 0 450 6.0
3V0 2.94 3.06 600 95 10 1 −3.5 0 450 6.0
3V3 3.23 3.37 600 95 5 1 −3.5 0 450 6.0
3V6 3.53 3.67 600 90 5 1 −3.5 0 450 6.0
3V9 3.82 3.98 600 90 3 1 −3.5 0 450 6.0
4V3 4.21 4.39 600 90 3 1 −3.5 0 450 6.0
4V7 4.61 4.79 500 80 3 2 −3.5 0.2 300 6.0
5V1 5.00 5.20 480 60 2 2 −2.7 1.2 300 6.0
5V6 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0
6V2 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0
6V8 6.66 6.94 80 15 2 4 1.2 4.5 200 6.0
7V5 7.35 7.65 80 15 1 5 2.5 5.3 150 4.0
8V2 8.04 8.36 80 15 0.70 5 3.2 6.2 150 4.0
9V1 8.92 9.28 100 15 0.50 6 3.8 7.0 150 3.0
10 9.80 10.20 150 20 0.20 7 4.5 8.0 90 3.0
11 10.80 11.20 150 20 0.10 8 5.4 9.0 85 2.5
12 11.80 12.20 150 25 0.10 8 6.0 10.0 85 2.5
13 12.70 13.30 170 30 0.10 8 7.0 11.0 80 2.5
15 14.70 15.30 200 30 0.05 10.5 9.2 13.0 75 2.0
16 15.70 16.30 200 40 0.05 11.2 10.4 14.0 75 1.5
18 17.60 18.40 225 45 0.05 12.6 12.4 16.0 70 1.5
20 19.6 20.4 225 55 0.05 14.0 14.4 18.0 60 1.5
22 21.6 22.4 250 55 0.05 15.4 16.4 20.0 60 1.25
24 23.5 24.5 250 70 0.05 16.8 18.4 22.0 55 1.25
Working voltage
V
(V)
Z
Differential
resistance
(Ω)
r
dif
Reverse current
I
(µA)
R
Temperature
coefficient
(mV/K)
S
Z
Diode
capacitance
[1]
(pF)
C
d
Non-repetitive
peak reverse
current
I
ZSM
IZ=5mA IZ=1mA IZ=5mA IZ=5mA
Min Max Max Max Max VR(V) Min Max Max Max
(A)
[2]
[1] f = 1 MHz; VR=0V
[2] tp= 100 µs; square wave; Tj=25°C prior to surge
BZB84_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 9 June 2009 5 of 14
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