NXP BYW 96E Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYW96 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
1996 Jun 07
Philips Semiconductors Product specification
Fast soft-recovery
BYW96 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack
• Also available with preformed leads
Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
V
R
continuous reverse voltage
BYW96D − 800 V
BYW96E − 1000 V
I
F(AV)
average forward current Ttp=50°C; lead length = 10 mm
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
I
F(AV)
average forward current T
=55°C; PCB mounting (see
amb
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
E
T
T
RSM
stg
j
repetitive peak forward current Ttp=50°C; see Fig.4 − 30 A
T
=55°C; see Fig.5 − 13 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM104
− 3A
− 1.25 A
− 70 A
prior to
− 10 mJ
1996 Jun 07 2
Philips Semiconductors Product specification
Fast soft-recovery
BYW96 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 5 A; Tj=T
I
= 5 A; see Fig.8 −−1.50 V
F
reverse avalanche
IR= 0.1 mA
; see Fig.8 −−1.25 V
j max
breakdown voltage
BYW96D 900 −−V
BYW96E 1100 −−V
reverse current VR=V
RRMmax
;
−−1µA
see Fig.9
V
R=VRRMmax
; Tj= 165 °C;
−−150 µA
see Fig.9
reverse recovery time when switched from IF= 0.5 A
−−300 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.12
diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 − 75 − pF
maximum slope of
reverse recovery current
when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
= 1 A to
F
−−6A/µs
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Jun 07 3
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