NXP BFS20 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
BFS20
NPN medium frequency transistor
Product data sheet
Supersedes data of 2004 Jan 5
2004 Feb 05
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20
FEATURES
• I
• V
C(max)
CEO(max)
= 25 mA
= 20 V
• Very low feedback capacitance (typ . 350 fF).
APPLICATIONS
• IF and VHF thick and thin-film circuit applications.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
T YPE NUMBER MARKING CODE
(1)
BFS20 G1*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BFS20 − plastic surface mounted package; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
tot
stg
j
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 4 V
collector current (DC) − 25 mA
peak collector current − 25 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Feb 05 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
thermal resistance from junction to ambient note 1 500 K/W
collector-base cut-off curren t IE = 0; VCB = 20 V − − 100 nA
IE = 0; VCB = 20 V; Tj = 100 °C − − 10 µA
emitter-base cut-off current IC = 0; VEB = 4 V − − 100 nA
DC current gain IC = 7 mA; VCE = 10 V 40 85 −
base-emitter voltage IC = 7 mA; VCE = 10 V − 740 900 mV
collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 1 − pF
feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz − 350 − fF
transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz 275 450 − MHz
2004 Feb 05 3
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