NXP BFS20 Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

BFS20

NPN medium frequency transistor

Product data sheet
Supersedes data of 2004 Jan 5

2004 Feb 05

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20

FEATURES

• I

• V

C(max)

CEO(max)

= 25 mA

= 20 V

• Very low feedback capacitance (typ . 350 fF).

APPLICATIONS

• IF and VHF thick and thin-film circuit applications.

DESCRIPTION

NPN medium frequency transistor in a SOT23 plastic
package.

MARKING

T YPE NUMBER MARKING CODE

(1)

BFS20 G1*

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

21

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

3

1

2

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

BFS20 − plastic surface mounted package; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
P
T
T
T

CBO
CEO

EBO
C
CM

tot

stg

j

amb

collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 4 V
collector current (DC) − 25 mA
peak collector current − 25 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Feb 05 2

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

BE

C

c

C

re

f

T

thermal resistance from junction to ambient note 1 500 K/W

collector-base cut-off curren t IE = 0; VCB = 20 V − − 100 nA

IE = 0; VCB = 20 V; Tj = 100 °C − − 10 µA
emitter-base cut-off current IC = 0; VEB = 4 V − − 100 nA
DC current gain IC = 7 mA; VCE = 10 V 40 85 −
base-emitter voltage IC = 7 mA; VCE = 10 V − 740 900 mV
collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 1 − pF
feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz − 350 − fF
transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz 275 450 − MHz

2004 Feb 05 3

NXP Semiconductors Product data sheet

3

NPN medium frequency transistor BFS20

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w

M

B

E

H

E

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Feb 05 4

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT

STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Feb 05 5

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2009
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The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.

Printed in The Netherlands R75/05/pp6 Date of release: 2004 Feb 05 Document order number: 9397 750 12769