NXP BFQ591 Schematic [ru]
BFQ591
NPN 7 GHz wideband transistor
Rev. 04 — 2 October 2007 Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors Product specification
Rev. 04 - 2 October 2007
2 of 11
NPN 7 GHz wideband transistor BFQ591
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications intheGHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER MARKING CODE
BFQ591 BCp
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
Fig.1 Simplified outline (SOT89).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
CBO
CEO
C
tot
FE
re
T
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 90 °C; note 1 −−2.25 W
DC current gain IC= 70 mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;
− 7 − GHz
f = 1 GHz
G
UM
2
|s
|
21
maximum unilateral power gain IC= 70 mA; VCE=12V;
f = 900 MHz; T
amb
=25°C
insertion power gain IC= 70 mA; VCE=12V;
f = 900 MHz; T
amb
=25°C
− 11 − dB
− 10 − dB
Note
1. T
is the temperature at the soldering point of the collector pin.
s
NXP Semiconductors Product specification
Rev. 04 - 2 October 2007
3 of 11
NPN 7 GHz wideband transistor BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. Tsis the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 90 °C; note 1 − 2.25 W
storage temperature −65 +150 °C
junction temperature − 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
Ts≤ 90 °C; note 1 38 K/W
to soldering point
Note
1. Tsis the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
Rev. 04 - 2 October 2007
4 of 11
NPN 7 GHz wideband transistor BFQ591
CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
|s21|
V
o
2
collector-base breakdown voltage IC= 0.1 mA; IE=0 −−20 V
collector-emitter breakdown
IC= 0.1 mA; IB=0 −−15 V
voltage
emitter-base breakdown voltage IE= 0.1 mA; IC=0 −−3V
collector-base leakage current IE= 0; VCB=10 −−100 nA
DC current gain IC=70mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;
− 7 − GHz
f = 1 GHz
maximum unilateral power gain;
note 1
IC= 70 mA; VCE=12V;
T
=25°C
amb
f = 900 MHz − 11 − dB
f = 2 GHz − 5.5 − dB
insertion power gain IC= 70 mA; VCE=12V;
f = 1 GHz; T
amb
=25°C
− 10 − dB
output voltage note 2 − 700 − mV
Notes
2
s
1. G
is the maximum unilateral power gain, assuming s12is zero and .
UM
G
UM
10 log
-------------------------------------------------------1s
21
2
–()1s
11
–()
2. dim= 60 dB (DIN45004B); Vp=Vo; Vq=Vo −6 dB; fp= 795.25 MHz; fq= 803.25 MHz; fr= 803.25 MHz;
measured at f
= 793.25 MHz.
(p+q+r)
dB=
2
22
Loading...