NXP BFQ591 Schematic [ru]

BFQ591

NPN 7 GHz wideband transistor

Rev. 04 — 2 October 2007 Product data sheet

IMPORTANT NOTICE

Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name

- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.

http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[e-mail] use [e-mail]

(email)
The copyright notice at the bottom of each page (or elsewhere in the document,

depending on the version)

- © Koninklijke Philips Electronics N.V. (year). All rights reserved ­is replaced with:

- © NXP B.V. (year). All rights reserved. ­If you have any questions related to the data sheet, please contact our nearest sales

office via e-mail or phone (details via [e-mail]). Thank you for your
cooperation and understanding,

NXP Semiconductors

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

2 of 11

NPN 7 GHz wideband transistor BFQ591

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

Intended for applications intheGHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.

DESCRIPTION

NPN wideband transistor in a SOT89 plastic package.

MARKING

TYPE NUMBER MARKING CODE

BFQ591 BCp

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1 emitter
2 collector
3 base

321

Fig.1 Simplified outline (SOT89).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f

CBO
CEO

C

tot
FE

re

T

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 90 °C; note 1 −−2.25 W
DC current gain IC= 70 mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;

− 7 − GHz

f = 1 GHz

G

UM

2

|s

|

21

maximum unilateral power gain IC= 70 mA; VCE=12V;

f = 900 MHz; T

amb

=25°C

insertion power gain IC= 70 mA; VCE=12V;

f = 900 MHz; T

amb

=25°C

− 11 − dB

− 10 − dB

Note

1. T

is the temperature at the soldering point of the collector pin.

s

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

3 of 11

NPN 7 GHz wideband transistor BFQ591

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. Tsis the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 90 °C; note 1 − 2.25 W
storage temperature −65 +150 °C
junction temperature − 175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction

Ts≤ 90 °C; note 1 38 K/W

to soldering point

Note

1. Tsis the temperature at the soldering point of the collector pin.

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

4 of 11

NPN 7 GHz wideband transistor BFQ591

CHARACTERISTICS

Tj=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

h

FE

C

re

f

T

G

UM

|s21|

V

o

2

collector-base breakdown voltage IC= 0.1 mA; IE=0 −−20 V
collector-emitter breakdown

IC= 0.1 mA; IB=0 −−15 V

voltage
emitter-base breakdown voltage IE= 0.1 mA; IC=0 −−3V
collector-base leakage current IE= 0; VCB=10 −−100 nA
DC current gain IC=70mA; VCE=8V 6090250
feedback capacitance IC= 0; VCB= 12 V; f = 1 MHz − 0.8 − pF
transition frequency IC= 70 mA; VCE=12V;

− 7 − GHz

f = 1 GHz

maximum unilateral power gain;
note 1

IC= 70 mA; VCE=12V;
T

=25°C

amb

f = 900 MHz − 11 − dB
f = 2 GHz − 5.5 − dB

insertion power gain IC= 70 mA; VCE=12V;

f = 1 GHz; T

amb

=25°C

− 10 − dB

output voltage note 2 − 700 − mV

Notes

2

s

1. G

is the maximum unilateral power gain, assuming s12is zero and .

UM

G

UM

10 log

-------------------------------------------------------­1s

21

2

–()1s

11

–()

2. dim= 60 dB (DIN45004B); Vp=Vo; Vq=Vo −6 dB; fp= 795.25 MHz; fq= 803.25 MHz; fr= 803.25 MHz;
measured at f

= 793.25 MHz.

(p+q+r)

dB=

2

22

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

5 of 11

NPN 7 GHz wideband transistor BFQ591

P

(W)

3

tot

2

1

0

0

handbook, halfpage

50 100 200

150

Fig.2 Power derating curve.

MLD796

Ts (°C)

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

VCE=12V.

−1

10

11010

MRA749

IC (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

2

1.2

handbook, halfpage

C

re

(pF)

0.8

0.4

0

0

IC= 0; f = 1 MHz.

48 16

12

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLD797

handbook, halfpage

8

f

T

(GHz)

6

4

2

0

1

VCE= 12 V; f = 1 GHz.

10 10

IC (mA)

Fig.5 Transition frequency as a function of

collector current.

MLD798

2

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

6 of 11

NPN 7 GHz wideband transistor BFQ591

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

0

VCE= 12 V; f = 900 MHz.

40 80

IC (mA)

Fig.6 Gain as a function of collector current;

typical values.

MLD799

G

max

G

UM

120

10

handbook, halfpage

gain
(dB)

8

6

4

2

0

0

VCE= 12 V; f = 2 GHz.

40 80

IC (mA)

Fig.7 Gain as a function of collector current;

typical values.

MLD800

MSG
G

UM

120

40

handbook, halfpage

gain
(dB)

30

MSG

20

10

0

10

IC= 70 mA; VCE=12V.

G

UM

2

10

G

max

MSG

3

10

f (MHz)

Fig.8 Gain as a function of frequency; typical

values.

MLD801

4

10

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

7 of 11

NPN 7 GHz wideband transistor BFQ591

−30

handbook, halfpage

d

im

(dB)

−40

−50

−60

−70

04080

Vo= 700 mV; VCE= 12 V; T

amb

=25°C; f

(p+q+r)

IC (mA)

= 793.25 MHz.

Fig.9 Intermodulation distortion as function of

collector current; typical values.

MLD802

120

−30

handbook, halfpage

d

2

(dB)

−40

−50

−60

−70

−80

04080

Vo= 316 mV; VCE= 12 V; f

(p+q)

= 810 MHz.

MLD803

IC (mA)

Fig.10 Second order intermodulation distortion as

function of collector current; typical values.

120

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

8 of 11

NPN 7 GHz wideband transistor BFQ591

SPICE parameters for the BFQ591 die.

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.341 fA
2 BF 123.5 −
3 NF .988 −
4 VAF 75.85 V
5 IKF 9.656 mA
6 ISE 232.2 fA
7 NE 2.134 −
8 BR 10.22 −
9 NR 1.016 −
10 VAR 1.992 V
11 IKR 294.1 mA
12 ISC 211.0 aA
13 NC 997.2 −
14 RB 5.00 Ω
15 IRB 1.000 µA
16 RBM 5.00 Ω
17 RE 1.275 Ω
18 RC 920.6 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 3.821 pF
23 VJE 600.0 mV
24 MJE 348.5 −
25 TF 13.60 ps
26 XTF 71.73 −
27 VTF 10.28 V
28 ITF 1.929 mA
29 PTF 0.000 deg
30 CJC 1.409 fF
31 VJC 219.4 mV
32 MJC 166.5 −
33 XCJ 2.340 −
34 TR 543.7 ps

(1)

35
36
37

(1)
(1)

CJS 0.000 F

VJS 750.0 mV

MJS 0.000 −
38 FC 733.2 −

handbook, halfpage

L1 L2

B

C

QLB= 50;QLE= 50;QL

= scaling frequency = 1 GHz.

f

c

L

be ce

B,E

Fig.11 Package equivalent circuit SOT89.

List of components (see Fig.11)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

L1 1 nH
L2 0.01 nH
L3 1 nH
L

B

L

E

C

cb

B

E'

L

L3

E

(f)=QL

B,E

√(f/fc);

16 fF
150 fF
150 fF

1.2 nH

1.2 nH

CB' C'

C

E

MBC964

Note

1. These parameters have not been extracted, the
default values are shown.

NXP Semiconductors Product specification

Rev. 04 - 2 October 2007

9 of 11

NPN 7 GHz wideband transistor BFQ591

PACKAGE OUTLINE

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

D

b

p3

123

b

p2

B

b

p1

e

1

e

B

A

E

L

p

H

E

c

DIMENSIONS (mm are the original dimensions)

UNIT

mm

0 2 4 mm

scale

A

1.6

1.4

OUTLINE

VERSION

SOT89 TO-243 SC-62

b

p1

0.48

0.35

b

p2

0.53

0.40

IEC JEDEC JEITA

b

1.8

1.4

p3

c

0.44

0.23

D

E

4.6

2.6

4.4

2.4

REFERENCES

e

3.0

1.5

H

L

1.2

0.8

w

p

0.13

EUROPEAN

PROJECTION

ISSUE DATE

06-03-16
06-08-29

e

E

1

4.25

3.75

NXP Semiconductors

Rev. 04 - 2 October 2007

10 of 11

Legal information

Data sheet status

BFQ591

NPN 7 GHz wideband transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published

http://www.nxp.com/profile/terms, including those pertaining to warranty,

at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

NXP Semiconductors

BFQ591

NPN 7 GHz wideband transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFQ591_N_4 20071002 Product data sheet - BFQ591_3
Modifications:
BFQ591_3 20020204 Product specification - BFQ591_N_2
BFQ591_N_2

(9397 750 09252)
BFQ591_N_1

(9397 750 09013)

• Fig. 1 and package outline updated

20020102 Preliminary specification BFQ591_N_1

20011203 Preliminary specification - -

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 2 October 2007

Document identifier: BFQ591_N_4