NXP BFG92A/X Schematic [ru]

BFG92A/X

NPN 5 GHz wideband transistor

Rev. 06 — 12 March 2008 Product data sheet

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NXP Semiconductors Product specification

Rev. 06 - 12 March 2008

2 of 13

NPN 5 GHz wideband transistor BFG92A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

DESCRIPTION

Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.

handbook, 2 columns

34

excellent reliability.

APPLICATIONS

Wideband applications in the UHF
and microwave range.

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Marking code: %MW.

12

Top view

MSB014

Fig.1 SOT143B.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
C
f
G

CBO
CEO

C

tot

re

T

UM

collector-base voltage −−20 V
collector-emitter voltage −−15 V
collector current (DC) −−25 mA
total power dissipation Ts≤ 60 °C −−400 mW
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain

IC= 15 mA; VCE=10V; T
f = 1 GHz

I

= 15 mA; VCE=10V; T

C

amb

amb

=25°C;

=25°C;

− 16 − dB

− 11 − dB

f = 2 GHz

F noise figure Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

− 2 − dB

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation Ts≤ 60 °C; note 1 − 400 mW
storage temperature range −65 150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 290 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

UM

F noise figure Γ

collector leakage current IE= 0; VCB=10V −−50 nA
DC current gain IC= 15 mA; VCE= 10 V 65 90 135
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.6 − pF
emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power

gain; note 1

IC= 15 mA; VCE=10V;
T

=25°C; f = 1 GHz

amb

I

= 15 mA; VCE=10V;

C

T

=25°C; f = 2 GHz

amb

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 1 GHz

amb

Γ

= Γ

; IC= 5 mA; VCE=10V;

s

opt

T

=25°C; f = 2 GHz

amb

− 16 − dB

− 11 − dB

− 2 − dB

− 3 − dB

Note

1. G

UM

is the maximum unilateral power gain, assuming S12 is zero and

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

800

handbook, halfpage

P

tot

(mW)

600

400

200

0

0 50 100 200

150

Ts(

Fig.2 Power derating curve.

MBB963 - 1

o

C)

I (mA)

C

MCD074

120

handbook, halfpage

h

FE

80

40

0

0102030

VCE=10V.

Fig.3 DC current gain as a function of collector

current; typical values.

0.6

handbook, halfpage

C

re

(pF)

0.4

0.2

0

0

IC=ic= 0; f= 1 MHz.

624

12

18

V (V)

CB

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MCD075

handbook, halfpage

6

f

T

(GHz)

4

2

0

0102030

VCE= 10 V; T

=25°C; f = 500 MHz.

amb

Fig.5 Transition frequency as a function of

collector current; typical values.

MBB275

I (mA)

C

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

30

handbook, halfpage

gain
(dB)

20

10

0

0

VCE= 10 V; f = 500 MHz.

510

MSG

G

UM

15

20

I (mA)

Fig.6 Gain as a function of collector current;

typical values.

MCD077

C

UM

MCD078

I (mA)

C

25

30

handbook, halfpage

gain
(dB)

20

10

25

0

0

VCE= 10 V; f = 1 GHz.

5101520

MSG

G

Fig.7 Gain as a function of collector current;

typical values.

50

handbook, halfpage

gain
(dB)

40

30

20

10

0

10

VCE= 10 V; IC= 5 mA.

MSG

G

UM

G

max

2

10

3

10

f
(MHz)

Fig.8 Gain as a function of frequency; typical

values.

MCD079

3

G

max

f (MHz)

MCD080

4

10

50

handbook, halfpage

gain
(dB)

40

30

20

10

4

10

0

10

VCE= 10 V; IC=15mA.

MSG

G

UM

2

10

10

Fig.9 Gain as a function of frequency; typical

values.

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

handbook, halfpage

4

F

(dB)

3

2

1

0

VCE=10V.

101

f = 2 GHz

1 GHz

500 MHz

I (mA)

C

Fig.10 Minimum noise figure as a function of

collector current; typical values.

MCD081

C

f (MHz)

MCD082

4

10

handbook, halfpage

2

10

4

F

(dB)

3

2

1

0

10

VCE=10V.

I = 15 mA

10 mA
5 mA

2

3

10

Fig.11 Minimum noise figure as a function of

frequency; typical values.

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 23.9 dB.

unstable

region

+

j

0

– j

0.2

0.2

MSG

23.9 dB

stability circle

0.5

0.5

1

F = 1.6 dB

min

1

2 dB

3 dB

4 dB

OPT

25100.50.2 1

2

*

2

MCD083

Fig.12 Common emitter noise figure circles; typical values.

5

10

∞

10

5

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

handbook, full pagewidth

Zo=50Ω.
Maximum stable gain = 19.9 dB.

1

stability circle

0.2

+ j

unstable region

0

– j

MSG

19.9 dB

0.2

0.5

0.5

OPT

*

F = 2.1 dB

min

10.2

2.5 dB
3 dB

4 dB

1

25100.5

2

2

MCD084

Fig.13 Common emitter noise figure circles; typical values.

5

10

∞

10

5

handbook, full pagewidth

Zo=50Ω.

1

0.5

5 dB

0.2

+ j

0

– j

0.2

G

max

*

12.5 dB
12 dB

0.5

F = 3 dB

min

10 dB

OPT

4 dB

3.5 dB

*

10.2

1

2

5100.5 2

2

MCD085

Fig.14 Common emitter noise figure circles; typical values.

5

10

∞

10

5

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

handbook, full pagewidth

VCE= 10 V; IC=15mA.

1

0.5

0.2

+

j

0

– j

0.2

0.5

3 GHz

0.5 10.2 1052

1

2

5

10

∞

40 MHz

10

5

2

MCD086

Fig.15 Common emitter input reflection coefficient (S11); typical values.

handbook, full pagewidth

VCE= 10 V; IC=15mA.

o

90

180

o

135

o

40 MHz

1020304050

3 GHz

_

o

135

_90o

o

45

o

0

_

o

45

MCD072

Fig.16 Common emitter forward transmission coefficient (S21); typical values.

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

o

90

handbook, full pagewidth

VCE= 10 V; IC=15mA.

handbook, full pagewidth

180

o

135

3 GHz

o

_

o

135

40

MHz

_90o

o

45

o

0

0.200.160.120.080.04

_

o

45

MCD071

Fig.17 Common emitter reverse transmission coefficient (S12); typical values.

1

0.5

2

VCE= 10 V; IC=15mA.

0.2

+ j

0

– j

0.2

0.5

0.5 10.2 1052

40 MHz

3 GHz

2

1

5

10

∞

10

5

MCD073

Fig.18 Common emitter output reflection coefficient (S22); typical values.

NXP Semiconductors Product specification

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NPN 5 GHz wideband transistor BFG92A/X

SPICE parameters for BFR90A/X die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 411.8 aA
2 BF 102.6 −
3 NF 997.2 m
4 VAF 62.67 V
5 IKF 3.200 A
6 ISE 4.010 fA
7 NE 1.577 −
8 BR 18.10 −
9 NR 996.2 m
10 VAR 3.369 V
11 IKR 1.281 A
12 ISC 279.9 aA
13 NC 1.075 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 1.164 Ω
18 RC 2.320 Ω
19 (note 1) XTB 0.000 −
20 (note 1) EG 1.110 eV
21 (note 1) XTI 3.000 −
22 CJE 890.5 fF
23 VJE 600.0 mV
24 MJE 258.5 m
25 TF 15.49 ps
26 XTF 39.14 −
27 VTF 2.152 V
28 ITF 213.7 mA
29 PTF 0.000 deg
30 CJC 546.5 fF
31 VJC 380.8 mV
32 MJC 202.9 m
33 XCJC 150.0 m
34 TR 5.618 ns
35 (note 1) CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

36 (note 1) VJS 750.0 mV
37 (note 1) MJS 0.000 −
38 FC 850.0 m

Note

1. These parameters have not been extracted,
the default values are shown.

handbook, halfpage

L1 L2

B

C

QLB= 50; QLE= 50.
QL

(f) = QL

B,E

fc= scaling frequency = 100 MHz.

L

be ce

√ (f/fc).

B,E

C

cb

B

E'

L

E

L3

E

C

MBC964

Fig.19 Package equivalent circuit SOT143B.

List of components (see Fig.19)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

84 fF
17 fF

191 fF
L1 0.12 nH
L2 0.21 nH
L3 0.06 nH
L

B

L

E

0.95 nH

0.40 nH

CB' C'

NXP Semiconductors Product specification

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Rev. 06 - 12 March 2008

11 of 13

NPN 5 GHz wideband transistor BFG92A/X

PACKAGE OUTLINES

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

34

Q

A

A

1

21

L

b

1

e

1

detail X

p

c

DIMENSIONS (mm are the original dimensions)

UNIT

mm

VERSION

A

1.1

0.9

OUTLINE

SOT143B

A

max

0.1

1

b

c

0.15

0.09

D

3.0

2.8

REFERENCES

b

0.48

0.38

1

p

0.88

0.78

IEC JEDEC EIAJ

0 1 2 mm

scale

1.4

1.2

E

e

1.9

e

1.7

H

E

1

2.5

2.1

L

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

NXP Semiconductors

Rev. 06 - 12 March 2008

12 of 13

Legal information

Data sheet status

BFG92A/X

NPN 5 GHz wideband transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] Theproductstatusof device(s)described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

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Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
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the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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at
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NXP Semiconductors

BFG92A/X

NPN 5 GHz wideband transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG92AX_N_6 20080312 Product data sheet - BFG92AX_N_5
Modifications:
BFG92AX_N_5 20071126 Product data sheet - BFG92AX_4
BFG92AX_4

(9397 750 04344)
BFG92SERIES_3 19950912 Product specification - BFG92SERIES_2
BFG92SERIES_2 19921101 Product specification - BFG92_SERIES_1
BFG92_SERIES_1 - - - -

• Characteristics Table; DC current gain value changed

19980923 Product specification - BFG92SERIES_3

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 12 March 2008

Document identifier: BFG92AX_N_6