NXP BFG92A/X Schematic [ru]
BFG92A/X
NPN 5 GHz wideband transistor
Rev. 06 — 12 March 2008 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 06 - 12 March 2008
2 of 13
NPN 5 GHz wideband transistor BFG92A/X
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
DESCRIPTION
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
handbook, 2 columns
34
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Marking code: %MW.
12
Top view
MSB014
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
C
f
G
CBO
CEO
C
tot
re
T
UM
collector-base voltage −−20 V
collector-emitter voltage −−15 V
collector current (DC) −−25 mA
total power dissipation Ts≤ 60 °C −−400 mW
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power
gain
IC= 15 mA; VCE=10V; T
f = 1 GHz
I
= 15 mA; VCE=10V; T
C
amb
amb
=25°C;
=25°C;
− 16 − dB
− 11 − dB
f = 2 GHz
F noise figure Γ
= Γ
; IC= 5 mA; VCE=10V;
s
opt
T
=25°C; f = 1 GHz
amb
− 2 − dB
NXP Semiconductors Product specification
3 of 13
Rev. 06 - 12 March 2008
3 of 13
NPN 5 GHz wideband transistor BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation Ts≤ 60 °C; note 1 − 400 mW
storage temperature range −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 290 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure Γ
collector leakage current IE= 0; VCB=10V −−50 nA
DC current gain IC= 15 mA; VCE= 10 V 65 90 135
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.6 − pF
emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz − 0.9 − pF
feedback capacitance IC=ic= 0; VCB= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 3.5 5 − GHz
maximum unilateral power
gain; note 1
IC= 15 mA; VCE=10V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=10V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 5 mA; VCE=10V;
s
opt
T
=25°C; f = 1 GHz
amb
Γ
= Γ
; IC= 5 mA; VCE=10V;
s
opt
T
=25°C; f = 2 GHz
amb
− 16 − dB
− 11 − dB
− 2 − dB
− 3 − dB
Note
1. G
UM
is the maximum unilateral power gain, assuming S12 is zero and
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
NXP Semiconductors Product specification
4 of 13
Rev. 06 - 12 March 2008
4 of 13
NPN 5 GHz wideband transistor BFG92A/X
800
handbook, halfpage
P
tot
(mW)
600
400
200
0
0 50 100 200
150
Ts(
Fig.2 Power derating curve.
MBB963 - 1
o
C)
I (mA)
C
MCD074
120
handbook, halfpage
h
FE
80
40
0
0102030
VCE=10V.
Fig.3 DC current gain as a function of collector
current; typical values.
0.6
handbook, halfpage
C
re
(pF)
0.4
0.2
0
0
IC=ic= 0; f= 1 MHz.
624
12
18
V (V)
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MCD075
handbook, halfpage
6
f
T
(GHz)
4
2
0
0102030
VCE= 10 V; T
=25°C; f = 500 MHz.
amb
Fig.5 Transition frequency as a function of
collector current; typical values.
MBB275
I (mA)
C
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