BFG590; BFG590/X
NPN 5 GHz wideband transistors
Rev. 04 — 12 November 2007 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
2 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER CODE
BFG590 %MH
BFG590/X %MN
PINNING
DESCRIPTION
PIN
BFG590 BFG590/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
handbook, 2 columns
12
Top view
Fig.1 Simplified outline SOT143B.
34
MSB014
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
|
|S
21
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
collector current (DC) −−200 mA
total power dissipation Ts≤ 60 °C −−400 mW
DC current gain IC= 35 mA; VCE=8V 5090280
feedback capacitance IC= 0; VCE=8V; f=1MHz − 0.7 − pF
transition frequency IC= 80 mA; VCE=4V; f=1GHz − 5 − GHz
maximum unilateral power gain IC= 80 mA; VCE=4V;
f = 900 MHz; T
amb
=25°C
insertion power gain IC= 80 mA; VCE=4V;
f = 900 MHz; T
amb
=25°C
− 13 − dB
− 11 − dB
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
3 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 200 mA
total power dissipation Ts≤ 60 °C; see Fig.2; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point Ts≤ 60 °C; note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
600
handbook, halfpage
P
tot
(mW)
400
200
MBG249
0
0 50 100 200
150
Ts(
Fig.2 Power derating curve.
o
C)
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
4 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
re
G
UM
2
|S
|
21
collector-base breakdown voltage IC= 0.1 mA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 10 mA; IB=0 15 −−V
emitter-base breakdown voltage IE= 0.1 mA; IC=0 3 −−V
collector-base leakage current VCB=10V; IE=0 −−100 nA
DC current gain IC= 70 mA; VCE= 8 V; see Fig.3 60 120 250
transition frequency IC= 80 mA; VCE=4V;
− 5 − GHz
f = 1 GHz; see Fig.5
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz;
− 0.7 − pF
see Fig.4
maximum unilateral power gain;
note 1
insertion power gain IC= 80 mA; VCE=4V;
IC= 80 mA; VCE=4V;
f = 900 MHz; T
I
= 80 mA; VCE= 4 V; f = 2 GHz;
C
T
=25°C
amb
f = 900 MHz; T
amb
amb
=25°C
=25°C
− 13 − dB
− 7.5 − dB
− 11 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
5 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
250
handbook, halfpage
h
FE
200
150
100
50
0
10
VCE=8V.
−2
−1
10
11010
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
MRA749
2
1.2
handbook, halfpage
C
re
(pF)
0.8
0.4
0
0
IC= 0; f= 1 MHz.
210
468
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLC057
V (V)
CB
f
T
(GHz)
V
CE =
8
6
4
2
0
10
4 V; f = 1 GHz.
I (mA)
C
handbook, halfpage
Fig.5 Transition frequency as a function of
collector current; typical values.
MLC058
2
10
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
6 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
30
handbook, halfpage
gain
(dB)
20
10
0
0
f = 900 MHz; VCE=4V.
20 40 60 80
Fig.6 Gain as a function of collector current;
typical values.
MLC059
G
max
G
UM
I (mA)
C
100
12
handbook, halfpage
gain
(dB)
8
4
0
0
f = 2 GHz; VCE=4V.
20 40 60 80
Fig.7 Gain as a function of collector current;
typical values.
MLC060
G
max
G
UM
I (mA)
C
100
50
handbook, halfpage
gain
(dB)
IC= 20 mA; VCE=4V.
G
UM
40
MSG
30
20
10
0
10
Fig.8 Gain as a function of frequency;
2
10
typical values.
MLC061
G
max
3
10
f (MHz)
4
10
50
handbook, halfpage
gain
(dB)
40
G
MSG
30
20
10
0
10
IC= 80 mA; VCE=4V.
UM
2
10
3
10
G
f (MHz)
MLC062
max
4
10
Fig.9 Gain as a function of frequency;
typical values.
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
7 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
o
90
handbook, full pagewidth
135
1
o
0.5
o
45
2
3 GHz
1.0
0.8
0.6
IC= 80 mA; VCE= 4 V; Zo=50Ω.
handbook, full pagewidth
0.2
5
0.4
0.2
180
o
0.2 0.5 2
0
0.2
1 5
o
00
5
40 MHz
135
0.5
o
1
o
90
2
o
45
MGC882
1.0
Fig.10 Common emitter input reflection coefficient (S11); typical values.
o
90
135
o
o
45
IC= 80 mA; VCE=4V.
40 MHz
o
180
50 40 30 20 10
o
135
90
3 GHz
o
o
45
MGC805
o
0
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
8 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
o
handbook, full pagewidth
90
IC= 80 mA; VCE=4V.
40 MHz
3 GHz
o
45
o
0
o
45
MGC803
o
135
o
180
0.25 0.20 0.15 0.10 0.05
o
135
o
90
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
IC= 80 mA; VCE=4V;Zo=50Ω.
o
90
1.0
0.8
135
1
o
0.5
o
45
2
0.6
0.2
5
0.4
0.2
180
o
0.2 0.5 2
0
1 5
o
00
3 GHz
0.2
135
40 MHz
0.5
o
2
1
o
90
5
o
45
MGC804
1.0
Fig.13 Common emitter output reflection coefficient (S22); typical values.
NXP Semiconductors Product specification
Rev. 04 - 12 November 2007
9 of 11
NPN 5 GHz wideband transistors BFG590; BFG590/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
0 1 2 mm
scale
A
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
1.9
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
e
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
NXP Semiconductors
Rev. 04 - 12 November 2007
10 of 11
Legal information
Data sheet status
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
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For sales office addresses, send an email to: salesaddresses@nxp.com
NXP Semiconductors
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFG590_X_N_4 20071112 Product data sheet - BFG590_X_3
Modifications:
BFG590_X_3
(9397 750 04346)
BFG590XR_2 19950919 Product specification - BFG590XR_1
BFG590XR_1 19921101 Preliminary specification - -
• Fig. 1 and 2 on page 2; Figure note changed
19981002 Product specification - BFG590XR_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2007
Document identifier: BFG590_X_N_4
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