NXP BFG540, BFG540/X, BFG540/XR Schematic [ru]

BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Rev. 05 — 21 November 2007 Product data sheet

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In data sheets where the previous Philips references remain, please use the new links as
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NXP Semiconductors

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

2 of 14

NPN 9 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satelliteTV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.

Thetransistors are mountedin plastic
SOT143B and SOT143R packages.

PINNING

PIN DESCRIPTION

BFG540 (Fig.1) Code: %MG
1 collector
2 base
3 emitter
4 emitter
BFG540/X (Fig.1) Code: %MM
1 collector
2 emitter
3 base
4 emitter
BFG540/XR (Fig.2) Code: %MR
1 collector
2 emitter
3 base
4 emitter

BFG540; BFG540/X;

BFG540/XR

handbook, 2 columns

12

Top view

Fig.1 SOT143B.

handbook, 2 columns

Top view

Fig.2 SOT143R.

34

MSB014

43

12

MSB035

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

3 of 14

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM

2

s

21

F noise figure Γ

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−120 mA
total power dissipation Ts≤ 60 °C; note 1 −−400 mW
DC current gain IC= 40 mA; VCE=8V; Tj=25°C 100 120 250
feedback capacitance IC= 0; VCE= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain IC= 40 mA; VCE= 8 V; f = 900 MHz;

T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain I

= 40 mA; VCE= 8 V; f = 900 MHz;

C

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 40 mA; VCE=8V;

s

opt

f = 900 MHz; T

= Γ

Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 2 GHz; T

amb

=25°C

amb

=25°C

amb

=25°C

− 9 − GHz

− 18 − dB

− 11 − dB

15 16 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
P
T
T

CBO
CES
EBO

C

tot
stg
j

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 120 mA
total power dissipation Ts≤ 60 °C; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. T

is the temperature at the soldering point of the collector pin.

s

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts≤ 60 °C; note 1 290 K/W

Note

is the temperature at the soldering point of the collector pin.

1. T

s

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

4 of 14

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

2

s

21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 34 − dBm
V

O

d

2

collector cut-off current IE= 0; VCB=8V −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 60 120 250
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
collector capacitance IE=ie= 0; VCB=8V; f=1MHz − 0.9 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;

T

=25°C

amb

maximum unilateral power gain
(note 1)

insertion power gain I

output power at 1 dB gain
compression

IC= 40 mA; VCE= 8 V; f = 900 MHz;
T

=25°C

amb

I

= 40 mA; VCE= 8 V; f = 2 GHz;

C

T

=25°C

amb

= 40 mA; VCE= 8 V; f = 900 MHz;

C

T

=25°C

amb

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 40 mA; VCE=8V;

s

opt

f = 900 MHz; T

Γ

= Γ

; IC= 10 mA; VCE=8V;

s

opt

f = 2 GHz; T

amb

=25°C

amb

=25°C

amb

=25°C

IC= 40 mA; VCE=8V; RL=50Ω;
f = 900 MHz; T

amb

=25°C

− 9 − GHz

− 18 − dB

− 11 − dB

15 16 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

− 21 − dBm

output voltage note 3 − 500 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

2. V

is the maximum unilateral power gain, assuming s12 is zero and

UM

= 8 V; IC= 40 mA; RL=50Ω; T

CE

amb

=25°C;
fp= 900 MHz; fq= 902 MHz;
measured at f

= 898 MHz and f

(2p − q)

(2q − p)

= 904 MHz.

3. dim= −60 dB (DIN 45004B); IC= 40 mA; VCE= 8 V; ZL=ZS=75Ω; T
Vp=VO; Vq=VO−6 dB; Vr=VO−6 dB;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f

(p+q−r)

4. IC= 40 mA; VCE= 8 V; VO= 275 mV; T
fp= 250 MHz; fq= 560 MHz; measured at f

= 793.25 MHz.

amb

=25°C;

= 810 MHz.

(p + q)

G

amb

UM

=25°C;

10

-------------------------------------------------------­1s

–()1s

2

s

21

2

11

–()

dB.log=

2

22

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

5 of 14

NPN 9 GHz wideband transistor

150

Ts(

MBG249

o

C)

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

BFG540; BFG540/X;

BFG540/XR

−1

10

11010

IC (mA)

MRA749

2

VCE≤ 10 V.

handbook, halfpage

1

C

re

(pF)

0.8

0.6

0.4

0.2

0

04

Fig.3 Power derating curve.

812

VCB (V)

MRA750

VCE= 8 V; Tj = 25 °C.

Fig.4 DC current gain as a function of collector

current.

12

handbook, halfpage

f

T

(GHz)

8

4

0

−1

10

11010

MRA751

V

= 8 V

CE

V

= 4 V

CE

IC (mA)

2

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage.

f = 1 GHz; T

amb

=25°C.

Fig.6 Transition frequency as a function of

collector current.

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

6 of 14

NPN 9 GHz wideband transistor

25

handbook, halfpage

gain
(dB)

VCE= 8 V; f = 900 MHz.
MSG = maximum stable gain; G

G

UM

MSG

20

15

10

5

0

020

= maximum unilateral power gain.

40 60

= maximum available gain;

max

MRA752

G

max

G

UM

I

(mA)

C

25

handbook, halfpage

gain
(dB)

20

15

10

5

0

020

VCE= 8 V; f = 2 GHz.
G

= maximum available gain;

max

= maximum unilateral power gain.

G

UM

BFG540; BFG540/X;

BFG540/XR

MRA753

G

max

G

UM

40 60

I

(mA)

C

Fig.7 Gain as a function of collector current.

50

handbook, halfpage

gain
(dB)

G

UM

40

MSG

30

20

10

0

10

IC= 10 mA; VCE=8V.
GUM= maximum unilateral power gain;

MSG = maximum stable gain; G

2

10

max

3

10

= maximum available gain.

G

max

f (MHz)

MRA754

Fig.8 Gain as a function of collector current.

G

max

f (MHz)

MRA755

4

10

50

handbook, halfpage

gain
(dB)

4

10

IC= 40 mA; VCE=8V.
GUM= maximum unilateral power gain;

MSG = maximum stable gain; G

G

40

30

20

10

UM

MSG

0

10

2

10

max

3

10

= maximum available gain.

Fig.9 Gain as a function of frequency.

Fig.10 Gain as a function of frequency.

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

7 of 14

NPN 9 GHz wideband transistor

50

MEA973

IC (mA)

−20

handbook, halfpage

d

im

(dB)

−30

−40

−50

−60

−70

10 60

20 30 40

−20

handbook, halfpage

d

2

(dB)

−30

−40

−50

−60

−70

10 60

BFG540; BFG540/X;

BFG540/XR

20 30 40

50

MEA972

IC (mA)

Fig.11 Intermodulation distortion as a function of

collector current.

handbook, halfpage

5

F

min

(dB)

4

3

2

1

0

1

VCE=8V.

2000 MHz

1000 MHz
900 MHz
500 MHz

G

ass

F

min

10

IC (mA)

MRA760

f = 900 MHz

1000 MHz

2000 MHz

Fig.13 Minimum noise figure and associated

available gain as functions of collector
current.

Fig.12 Second order intermodulation distortion as

a function of collector current.

20

G

ass

(dB)

15

10

5

0

−5

2

10

handbook, halfpage

5

F

min

(dB)

4

3

2

10 mA

1

0

10

VCE=8V.

40 mA

2

IC = 10 mA

F

min

40 mA

G

10

ass

3

f (MHz)

MRA761

20
G

ass

(dB)

15

10

5

0

−5

4

10

Fig.14 Minimum noise figure and associated

available gain as functions of frequency.

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

8 of 14

NPN 9 GHz wideband transistor

handbook, full pagewidth

135°

0.2

0

0.2

−135°

0.2 0.5

180°

IC= 10 mA; VCE= 8 V; Zo=50Ω; f = 900 MHz.

0.5

0.5

F

= 1.3 dB

min

F = 1.5 dB

F = 2 dB

F = 3 dB

90°

1

OPT

1 2 5

1

−90°

BFG540; BFG540/X;

BFG540/XR

1.0

45°

2

5

5

2

−45°

MRA762

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

180°

G

max

Fig.15 Noise circle figure.

90°

1

135°

= 11.4 dB

0

−135°

0.5
G = 8 dB

G = 9 dB

G = 10 dB

MS

0.2 0.5 1 2 5
OPT

F

= 2.1 dB

min

0.2

F = 2.5 dB

F = 3 dB

F = 4 dB

0.5

1

−90°

1.0

45°

2

5

5

2

−45°

MRA763

0.8

0.6

0.4

0.2

0°

0

1.0

IC= 10 mA; VCE= 8 V; Zo=50Ω; f = 2 GHz.

Fig.16 Noise circle figure.

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

9 of 14

NPN 9 GHz wideband transistor

handbook, full pagewidth

135°

0.2

0

0.2

−135°

0.2 0.5

180°

IC= 40 mA; VCE= 8 V; Zo=50Ω.

0.5

0.5

3 GHz

90°

1

1 2 5

40 MHz

1

−90°

BFG540; BFG540/X;

BFG540/XR

1.0

45°

2

5

5

2

−45°

MRA756

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

Fig.17 Common emitter input reflection coefficient (s11).

90°

135°

40 MHz

180°

50 40 30 20 10

−135°

3 GHz

−90°

45°

−45°

0°

MRA757

IC= 40 mA; VCE=8V.

Fig.18 Common emitter forward transmission coefficient (s21).

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

10 of 14

NPN 9 GHz wideband transistor

handbook, full pagewidth

135°

180°

0.25 0.20 0.15 0.10

−135°

0.05

90°

40 MHz

BFG540; BFG540/X;

BFG540/XR

45°

3 GHz

0°

−45°

IC= 40 mA; VCE=8V.

handbook, full pagewidth

IC= 40 mA; VCE= 8 V; Zo=50Ω.

−90°

MRA758

Fig.19 Common emitter reverse transmission coefficient (s12).

90°

1

180°

135°

0

−135°

0.5

0.2

0.2 0.5 1 2 5

3 GHz

0.2

0.5

1

−90°

2

40 MHz

2

45°

5

0°

5

−45°

MRA759

1.0

0.8

0.6

0.4

0.2

0

1.0

Fig.20 Common emitter output reflection coefficient (s22).

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

11 of 14

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

PACKAGE OUTLINES

Plastic surface mounted package; 4 leads SOT143B

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

b

1

e

1

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

1

A

max

0.1

b

0.48

0.38

b

c

1

p

0.88

0.15

0.78

0.09

34

21

0 1 2 mm

scale

D

E

e

e

1

3.0

1.4

1.9

2.8

1.2

1.7

H

2.5

2.1

Q

A

A

1

c

L

p

detail X

L

E

p

0.45

0.55

0.15

0.45

ywvQ

0.1 0.10.2

OUTLINE

VERSION

SOT143B

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

NXP Semiconductors Product specification

Rev. 05 - 21 November 2007

12 of 14

NPN 9 GHz wideband transistor

BFG540; BFG540/X;

BFG540/XR

Plastic surface mounted package; reverse pinning; 4 leads SOT143R

D

y

e

b

p

B

w M

E

v M

A

B

H

E

A

X

e

1

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

1

A

max

0.1

b

0.48

0.38

b

c

1

p

0.88

0.15

0.78

0.09

43

12

b

1

0 1 2 mm

scale

D

E

e

e

1

3.0

1.4

1.9

2.8

1.2

1.7

H

2.5

2.1

Q

A

A

1

c

L

p

detail X

L

E

p

0.55

0.45

0.25

0.25

ywvQ

0.1 0.10.2

OUTLINE
VERSION

SOT143R SC-61B

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

97-03-10
99-09-13

NXP Semiconductors

Rev. 05 - 21 November 2007

13 of 14

Legal information

Data sheet status

BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusofdevice(s) described in thisdocumentmay have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) maycause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published

http://www.nxp.com/profile/terms, including those pertaining to warranty,

at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
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Notice: All referenced brands, product names, servicenames and trademarks
are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

NXP Semiconductors

BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG540_X_XR_N_5 20071121 Product data sheet - BFG540_X_XR_4
Modifications:
BFG540_X_XR_4

(9397 750 07059)
BFG540XR_3

(9397 750 03144)
BFG540XR_2 - Product specification - BFG540XR_1
BFG540XR_1 - - - -

• Pinning table on page 2; changed code

20000523 Product specification - BFG540XR_3

19950901 Product specification - BFG540XR_2

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 21 November 2007

Document identifier: BFG540_X_XR_N_5