NXP BFG520W, BFG520W/X Schematic [ru]

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Rev. 04 — 21 November 2007 Product data sheet

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NXP Semiconductors

NXP Semiconductors Product speciﬁcation

Rev. 04 - 21 November 2007

2 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER CODE

BFG520W N3 BFG520W/X N4

PINNING

DESCRIPTION

BFG520W BFG520W/X

1 collector collector 2 base emitter 3 emitter base 4 emitter emitter

handbook, halfpage

Top view

Fig.1 Simplified outline SOT343N.

MBK523

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V V I P h C f G

CBO CES

tot

collector-base voltage open emitter −−20 V collector-emitter voltage RBE=0 −−15 V collector current (DC) −−70 mA total power dissipation Ts≤ 85 °C −−500 mW DC current gain IC= 20 mA; VCE= 6 V 60 120 250 feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.35 − pF transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz; T maximum unilateral

IC= 20 mA; VCE= 6 V; f = 900 MHz; T

=25°C − 9 − GHz

amb

=25°C − 17 − dB

amb

power gain

F noise ﬁgure Γ

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz; T

; IC= 5 mA; VCE= 6 V; f = 900 MHz − 1.1 1.6 dB

s=Γopt

=25°C16 17 − dB

amb

NXP Semiconductors Product speciﬁcation

Rev. 04 - 21 November 2007

3 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

CBO

CES

EBO

tot

stg

Note

1. T

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V collector-emitter voltage RBE=0 − 15 V emitter-base voltage open collector − 2.5 V collector current (DC) − 70 mA total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW storage temperature −65 +150 °C junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th j-s

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

150

MBG248

T ( C)

600

handbook, halfpage

tot

(mW)

400

200

0 50 100 200

Fig.2 Power derating curve.

NXP Semiconductors Product speciﬁcation

Rev. 04 - 21 November 2007

4 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

CHARACTERISTICS

=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(BR)CBO

(BR)CES

(BR)EBO

CBO

F noise ﬁgure Γ

ITO third order intercept point note 2 − 26 − dBm V

collector-base breakdown voltage IC=10 µA; IE=0 20 −−V collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V emitter-base breakdown voltage IE=10µA; IC= 0 2.5 −−V collector leakage current VCB=6V; IE=0 −−50 nA DC current gain IC= 20 mA; VCE= 6 V; see Fig.3 60 120 250 feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;

− 0.35 − pF

see Fig.4

transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;

=25°C; see Fig.5

amb

maximum unilateral power gain; note 1

IC= 20 mA; VCE= 6 V; f = 900 MHz; T

=25°C

amb

= 20 mA; VCE= 6 V; f = 2 GHz;

=25°C

amb

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;

=25°C

amb

; IC= 5 mA; VCE=6V;

s=Γopt

− 9 − GHz

− 17 − dB

− 11 − dB

16 17 − dB

− 1.1 1.6 dB

f = 900 MHz

; IC= 20 mA; VCE=6V;

s=Γopt

− 1.6 2.1 dB

f = 900 MHz

; IC= 5 mA; VCE=6V;

s=Γopt

− 1.85 − dB

f = 2 GHz

output power at 1 dB gain compression

IC= 20 mA; VCE= 6 V; f = 900 MHz; RL=50Ω; T

amb

=25°C

− 17 − dBm

output voltage note 3 − 275 − mV second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero.

2. IC= 20 mA; VCE=6V; RL=50Ω; T fp= 900 MHz; fq= 902 MHz; measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.

3. dim= −60 dB (DIN45004B); IC= 20 mA; VCE=6V; Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω; fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at fp+fq−fr= 793.25 MHz.

4. IC= 20 mA; VCE=6V; Vo=75mV; RL=75Ω; T fp= 250 MHz; fq= 560 MHz; measured at fp+fq= 810 MHz.

amb

=25°C;

amb

=25°C;

-------------------------------------------------------------1S

–()1S

–()

dB.log=

NXP Semiconductors Product speciﬁcation

Rev. 04 - 21 November 2007

5 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

150

handbook, halfpage

100

VCE=6V.

11010

I (mA)

Fig.3 DC current gain as a function of collector

current; typical values.

MLB807

0.6

handbook, halfpage

(pF)

0.4

0.2

IC= 0; f= 1 MHz.

2.5 5 7.5 10

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLB808

V (V)

handbook, halfpage

(GHz)

f = 1 GHz; T

amb

=25°C.

101

I (mA)

Fig.5 Transition frequency as a function of

collector current; typical values.

MLB809

V =

6 V

3 V

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