NXP BFG520W, BFG520W/X Schematic [ru]

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Rev. 04 — 21 November 2007 Product data sheet

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NXP Semiconductors

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

2 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.

MARKING

TYPE NUMBER CODE

BFG520W N3
BFG520W/X N4

PINNING

DESCRIPTION

PIN

BFG520W BFG520W/X

1 collector collector
2 base emitter
3 emitter base
4 emitter emitter

handbook, halfpage

Top view

Fig.1 Simplified outline SOT343N.

34

21

MBK523

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I
P
h
C
f
G

CBO
CES

C

tot

FE

re

T

UM

collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−70 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 20 mA; VCE= 6 V 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz; T
maximum unilateral

IC= 20 mA; VCE= 6 V; f = 900 MHz; T

=25°C − 9 − GHz

amb

=25°C − 17 − dB

amb

power gain

2

|

|S

21

F noise figure Γ

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz; T

; IC= 5 mA; VCE= 6 V; f = 900 MHz − 1.1 1.6 dB

s=Γopt

=25°C16 17 − dB

amb

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

3 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 70 mA
total power dissipation Ts≤ 85 °C; see Fig.2; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W

Note

1. T

is the temperature at the soldering point of the collector pin.

s

150

MBG248

o

T ( C)

s

600

handbook, halfpage

P

tot

(mW)

400

200

0

0 50 100 200

Fig.2 Power derating curve.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

4 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

h

FE

C

re

f

T

G

UM

2

|S

|

21

F noise figure Γ

P

L1

ITO third order intercept point note 2 − 26 − dBm
V

o

d

2

collector-base breakdown voltage IC=10 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC=10µA; RBE=0 15 −−V
emitter-base breakdown voltage IE=10µA; IC= 0 2.5 −−V
collector leakage current VCB=6V; IE=0 −−50 nA
DC current gain IC= 20 mA; VCE= 6 V; see Fig.3 60 120 250
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz;

− 0.35 − pF

see Fig.4

transition frequency IC= 20 mA; VCE= 6 V; f = 1 GHz;

T

=25°C; see Fig.5

amb

maximum unilateral power gain;
note 1

IC= 20 mA; VCE= 6 V; f = 900 MHz;
T

=25°C

amb

I

= 20 mA; VCE= 6 V; f = 2 GHz;

C

T

=25°C

amb

insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;

T

=25°C

amb

; IC= 5 mA; VCE=6V;

s=Γopt

− 9 − GHz

− 17 − dB

− 11 − dB

16 17 − dB

− 1.1 1.6 dB

f = 900 MHz

Γ

; IC= 20 mA; VCE=6V;

s=Γopt

− 1.6 2.1 dB

f = 900 MHz

Γ

; IC= 5 mA; VCE=6V;

s=Γopt

− 1.85 − dB

f = 2 GHz

output power at 1 dB gain
compression

IC= 20 mA; VCE= 6 V; f = 900 MHz;
RL=50Ω; T

amb

=25°C

− 17 − dBm

output voltage note 3 − 275 − mV
second order intermodulation

note 4 −−50 − dB

distortion

Notes

1. G

is the maximum unilateral power gain, assuming S12 is zero.

UM

2. IC= 20 mA; VCE=6V; RL=50Ω; T
fp= 900 MHz; fq= 902 MHz; measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.

3. dim= −60 dB (DIN45004B); IC= 20 mA; VCE=6V; Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω;
fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at fp+fq−fr= 793.25 MHz.

4. IC= 20 mA; VCE=6V; Vo=75mV; RL=75Ω; T
fp= 250 MHz; fq= 560 MHz; measured at fp+fq= 810 MHz.

amb

=25°C;

amb

=25°C;

2

S

G

UM

10

-------------------------------------------------------------­1S

–()1S

21

2

11

–()

dB.log=

2

22

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

5 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

150

handbook, halfpage

h

FE

100

50

0

1

10

VCE=6V.

11010

I (mA)

C

Fig.3 DC current gain as a function of collector

current; typical values.

MLB807

2

0.6

handbook, halfpage

C

re

(pF)

0.4

0.2

0

0

IC= 0; f= 1 MHz.

2.5 5 7.5 10

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

MLB808

V (V)

CB

12

handbook, halfpage

f

T

(GHz)

8

4

0

f = 1 GHz; T

amb

=25°C.

101

I (mA)

C

Fig.5 Transition frequency as a function of

collector current; typical values.

MLB809

V =

CE

6 V

3 V

2

10

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

6 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

30

handbook, halfpage

gain
(dB)

20

MSG

10

0

0

f = 900 MHz; VCE=6V.

10 20 40

30

Fig.6 Gain as a function of collector current;

typical values.

G

max

G

UM

I (mA)

C

MLB810

30

handbook, halfpage

gain
(dB)

20

MSG

10

0

0

f = 2 GHz; VCE=6V.

10 20 40

30

Fig.7 Gain as a function of collector current;

typical values.

G

max

G

UM

I (mA)

C

MLB811

50

handbook, halfpage

gain
(dB)

IC= 5 mA; VCE=6V.

G

40

MSG

30

20

10

0

10

Fig.8 Gain as a function of frequency;

UM

2

10

typical values.

MLB812

G

max

3

10

f (MHz)

4

10

50

handbook, halfpage

gain

(dB)

IC= 20 mA; VCE=6V.

G

40

MSG

30

20

10

0

10

UM

2

10

10

3

G

max

f (MHz)

MLB813

4

10

Fig.9 Gain as a function of frequency;

typical values.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

7 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

30

handbook, halfpage

d

im

(dB)

40

50

60

70

01020 40

Vo= 275 mV; fp+fq−fr= 793.25 MHz; VCE=6V;

=75Ω; T

R

L

amb

=25°C.

30

Fig.10 Intermodulation distortion as a function

of collector current; typical values.

MLB818

I (mA)

C

30

MLB819

I (mA)

C

30

handbook, halfpage

d

2

(dB)

40

50

60

70

01020 40

Vo= 75 mV; fp+fq= 810 MHz; VCE=6V;

=75Ω T

R

L

amb

=25°C.

Fig.11 Second order intermodulation distortion as a

function of collector current; typical values.

4

handbook, halfpage

F

(dB)

3

2

1

0

VCE=6V.

Fig.12 Minimum noise figure as a function

of collector current; typical values.

MLB820

f = 2000 MHz

1000 MHz

900 MHz
500 MHz

I (mA)

C

f = 900 MHz

1000 MHz

2000 MHz

C

MLB821

2

10101

20

handbook, halfpage

G

ass

(dB)

15

10

5

2

10101

0

I (mA)

VCE=6V.

Fig.13 Associated available gain as a function

of collector current; typical values.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

8 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

4

handbook, halfpage

F

(dB)

3

2

I =

C

20 mA

1

5 mA

0

10

VCE=6V.

2

3

10

Fig.14 Minimum noise figure as a function of

frequency; typical values.

f (MHz)

MLB822

f (MHz)

MLB823

4

10

20

handbook, halfpage

G

ass

(dB)

15

10

5

4

10

0

10

VCE=6V.

C

2

20 mAI = 5 mA

3

10

Fig.15 Associated available gain as a function

of frequency; typical values.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

9 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

o

90

1

o

45

2

1.0

0.8

0.6

handbook, full pagewidth

unstable
region

o

135

0.5

180

stability
circle

f = 900 MHz; VCE= 6 V; IC= 5 mA; Zo=50Ω.

Fig.16 Common emitter noise figure circles; typical values.

handbook, full pagewidth

0.2

o

0.2

0

0.5

Γ

opt

F = 1.1 dB

min

1 2 5

F = 1.5 dB

5

0.4

0.2

o

00

F = 2 dB

5

o

45

MLB824

1.0

1.0

o

45

0.8

135

0.2

135

F = 3 dB

0.5

o

2

1

o

90

o

90

1

o

0.5

2

0.6

(1) Γ

; F

opt

(2) F = 2 dB.
(3) F = 2.5 dB.
(4) F = 3 dB.
(5) Γms;G
(6) G = 11 dB.
(7) G = 10 dB.
(8) G = 9 dB.
f = 2 GHz; VCE= 6 V; IC= 5 mA; Zo=50Ω.

= 1.85 dB.

min

= 11.8 dB.

max

(4)

(3)

1

5

52

5

2

1

o

90

o

45

MLB825

180

0.2

o

0.2

0

(5)

(2)

0.5

(1)

0.2

(6)

135

(7)

0.5

o

(8)

Fig.17 Common emitter noise figure circles; typical values.

0.4

0.2

o

00

1.0

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

10 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

o

90

handbook, full pagewidth

135

1

o

0.5

o

45

2

1.0

0.8

0.6

VCE= 6 V; IC= 20 mA; Zo=50Ω.

handbook, full pagewidth

0.2
3 GHz

5

0.4

0.2

180

o

0.2

0

0.5

1

52

o

00

40 MHz

0.2

135

0.5

o

2

1

o

90

5

o

45

MLB814

1.0

Fig.18 Common emitter input reflection coefficient (S11); typical values.

o

90

135

o

o

45

VCE= 6 V; IC= 20 mA.

40 MHz

o

180

50 40 30 20 10

o

135

90

3 GHz

o

o

45

MLB815

o

0

Fig.19 Common emitter forward transmission coefficient (S21); typical values.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

11 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

o

handbook, full pagewidth

90

VCE= 6 V; IC= 20 mA.

handbook, full pagewidth

o

135

o

180

0.25 0.20 0.15 0.10 0.05

o

135

90

3 GHz

40 MHz

o

o

45

o

0

o

45

MLB816

Fig.20 Common emitter reverse transmission coefficient (S12); typical values.

o

90

1.0

0.8

0.6

135

1

o

0.5

o

45

2

VCE= 6 V; IC= 20 mA; Zo=50Ω.

0.2

5

0.4

0.2

180

o

0.2

0

0.5

1

52

o

00

40 MHz

0.2

135

3 GHz

0.5

o

2

1

o

90

5

o

45

MLB817

1.0

Fig.21 Common emitter output reflection coefficient (S22); typical values.

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

12 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

SPICE parameters for the BFG520W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 1.016 fA
2 BF 220.1 −
3 NF 1.000 −
4 VAF 48.06 V
5 IKF 510 mA
6 ISE 283 fA
7 NE 2.035 −
8 BR 100.7 −
9 NR 0.988 −
10 VAR 1.692 V
11 IKR 2.352 mA
12 ISC 24.48 aA
13 NC 1.022 −
14 RB 10.00 Ω
15 IRB 1.000 µA
16 RBM 10.00 Ω
17 RE 775.3 mΩ
18 RC 2.210 Ω

(1)

19
20
21

(1)
(1)

XTB 0.000 −
EG 1.110 eV

XTI 3.000 −
22 CJE 1.245 pF
23 VJE 600.0 mV
24 MJE 0.258 −
25 TF 8.616 ps
26 XTF 6.788 −
27 VTF 1.414 V
28 ITF 110.3 mA
29 PTF 45.01 deg
30 CJC 447.6 fF
31 VJC 189.2 mV
32 MJC 0.070 −
33 XCJC 0.130 −
34 TR 543.7 ps

(1)

35

CJS 0.000 F

SEQUENCE No. PARAMETER VALUE UNIT

(1)

36
37

(1)

VJS 750.0 mV
MJS 0.000 −

38 FC 0.780 −

Note

1. These parameters have not been extracted, the
default values are shown.

(f)=QL

B,E

C

cb

E'

L

E

L3

E

√(f/fc)

B,E

C

MBC964

handbook, halfpage

L1 L2

B

C

be ce

QLB= 50; QLE= 50; QL

= scaling frequency = 1 GHz.

f

c

L

B

Fig.22 Package equivalent circuit SOT343N.

List of components (see Fig.22)

DESIGNATION VALUE UNIT

C

be

C

cb

C

ce

70 fF
50 fF

115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L

B

L

E

0.40 nH

0.40 nH

CB' C'

NXP Semiconductors Product specification

Rev. 04 - 21 November 2007

13 of 15

NPN 9 GHz wideband transistors BFG520W; BFG520W/X

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT343N

D

y

e

34

A

12

b

1

e

b

p

1

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE
VERSION

SOT343N

1.1

0.8

0 1 2 mm

scale

A

1

A

max

0.1

b

p

0.4

0.3

IEC JEDEC EIAJ

b

1

0.7

0.5

cD

0.25

2.2

0.10

1.8

E

1.35

1.3

1.15

REFERENCES

e

H

L

e

E

1

2.2

0.45

2.0

0.15

Qwv

p

0.23

0.13

0.2y0.10.21.15

EUROPEAN

PROJECTION

ISSUE DATE

97-05-21

NXP Semiconductors

Rev. 04 - 21 November 2007

14 of 15

Legal information

Data sheet status

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

Definitions

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internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shallhaveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

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reliable. However, NXP Semiconductors does not give anyrepresentations or
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information and shall have no liability for the consequences of use of such
information.

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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting valuesare stress ratings only and operationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

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subject to the general terms and conditions of commercial sale, as published

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at
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are the property of their respective owners.

Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

NXP Semiconductors

BFG520W; BFG520W/X

NPN 9 GHz wideband transistors

Revision history

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG520W_N_4 20071121 Product data sheet - BFG520W_X_3
Modifications:
BFG520W_X_3 19981002 Product specification - BFG520W_2
BFG520W_2 19950824 Product specification - BFG520W_1
BFG520W_1 19940829 - - -

• Page 2; text in Pinning table changed

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 21 November 2007

Document identifier: BFG520W_X_N_4