BFG505; BFG505/X
NPN 9 GHz wideband transistors
Rev. 04 — 22 November 2007 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
2 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER CODE
BFG505 %ME
BFG505/X %MK
PINNING
DESCRIPTION
PIN
BFG505 BFG505/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
handbook, 2 columns
12
Top view
Fig.1 Simplified outline SOT143B.
34
MSB014
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
S
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−18 mA
total power dissipation Ts≤ 130 °C −−150 mW
DC current gain VCE=6V; IC= 5 mA 60 120 250
feedback capacitance VCB=6V; IC=ic= 0; f = 1 MHz − 0.2 − pF
transition frequency VCE=6V; IC= 5 mA; f = 1 GHz − 9 − GHz
maximum unilateral
power gain
insertion power gain VCE=6V; Ic= 5 mA;
VCE=6V; IC= 5 mA;
T
=25°C; f = 900 MHz
amb
V
=6V; IC= 5 mA;
CE
T
=25°C; f = 2 GHz
amb
T
=25°C; f = 900 MHz
amb
= Γ
s
opt;VCE
T
=25°C; f = 900 MHz
amb
Γ
= Γ
s
opt;VCE
T
=25°C; f = 900 MHz
amb
Γ
= Γ
s
opt
T
=25°C; f = 2 GHz
amb
=6V; Ic= 1.25 mA;
=6V; Ic= 5 mA;
; VCE=6V; Ic= 1.25 mA;
− 20 − dB
− 13 − dB
16 17 − dB
− 1.2 1.7 dB
− 1.6 2.1 dB
− 1.9 − dB
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
3 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
is the temperature at the soldering point of the collector pin.
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 18 mA
total power dissipation Ts≤ 130 °C; see Fig.2; note 1 − 150 mW
storage temperature range −65 150 °C
junction temperature − 175 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
200
handbook, halfpage
P
tot
(mW)
150
100
50
MRA638-1
0
0 50 100 200
150
Ts (°C)
Fig.2 Power derating curve.
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
4 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 10 − dBm
collector cut-off current VCB=6V; IE=0 −− 50 nA
DC current gain IC= 5 mA; VCE= 6 V; see Fig.3 60 120 250
emitter capacitance IC=ic=0 VEB= 0.5 V; f = 1 MHz − 0.4 − pF
collector capacitance VCB=6V; IE=ie= 0; f = 1 MHz − 0.3 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz; see Fig.4 − 0.2 − pF
transition frequency IC= 5 mA; VCE= 6 V; f = 1 GHz;
− 9 − GHz
see Fig.5
maximum unilateral
power gain; note 1
2
insertion power gain Ic= 5 mA; VCE=6V;
output power at 1 dB gain
compression
IC= 5 mA; VCE=6V;
T
=25°C; f = 900 MHz
amb
I
= 5 mA; VCE=6V;
c
T
=25°C; f = 2 GHz
amb
T
=25°C; f = 900 MHz
amb
= Γ
; IC= 1.25 mA; VCE=6V;
s
opt
T
=25°C; f = 900 MHz
amb
= Γ
Γ
T
Γ
T
; IC= 5 mA; VCE=6V;
s
opt
=25°C; f = 900 MHz
amb
= Γ
; IC= 1.25 mA; VCE=6V;
s
opt
=25°C; f = 2 GHz
amb
IC= 5 mA; VCE=6V; RL=50Ω;
T
=25°C; f = 900 MHz
amb
− 20 − dB
− 13 − dB
16 17 − dB
− 1.2 1.7 dB
− 1.6 2.1 dB
− 1.9 − dB
− 4 − dBm
Notes
1. G
2. VCE= 6 V; IC= 5 mA; RL=50Ω; T
is the maximum unilateral power gain, assuming S12is zero and
UM
=25°C;
amb
fp= 900 MHz; fq= 902 MHz;
measured at 2fp− fq= 898 MHz and 2fq− fp= 904 MHz.
2
S
G
UM
--------------------------------------------------------------
10
1S
–()1S
21
2
11
–()
dB.log=
2
22
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
5 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
250
handbook, halfpage
h
FE
200
150
100
50
0
−3
10
VCE=6V.
−2
10
−1
10
110
MRA639
I
(mA)
C
Fig.3 DC current gain as a function of collector
current.
0.4
handbook, halfpage
C
re
(pF)
0.3
0.2
0.1
2
10
0
02 10
IC= 0; f= 1 MHz.
46 8
MRA640
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
12
handbook, halfpage
f
T
(GHz)
8
4
0
−1
10
T
=25°C; f = 1 GHz.
amb
11010
V
CE
V
CE
Fig.5 Transition frequency as a function of
collector current.
= 6 V
= 3 V
IC (mA)
MRA641
2
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
04
VCE= 6 V; f = 900 MHz.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
G
UM
MSG
812
Fig.6 Gain as a function of collector current.
MRA642
I
(mA)
C
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
6 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
04
VCE= 6 V; f = 2 GHz.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
G
max
812
Fig.7 Gain as a function of collector current.
MRA643
I
(mA)
C
50
handbook, halfpage
gain
G
(dB)
VCE= 6 V; IC= 1.25 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
UM
40
30
MSG
20
10
0
10
= maximum available gain.
2
10
Fig.8 Gain as a function of frequency.
MRA644
3
10
f (MHz)
4
10
50
handbook, halfpage
gain
(dB)
VCE= 6 V; IC= 5 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
G
UM
40
MSG
30
20
10
0
10
= maximum available gain.
2
10
Fig.9 Gain as a function of frequency.
MRA645
G
max
3
10
f (MHz)
4
10
handbook, halfpage
5
F
min
(dB)
4
3
2
1
0
10
VCE=6V.
−1
2000 MHz
1000 MHz
900 MHz
500 MHz
G
ass
F
min
1
IC (mA)
MRA650
f = 900 MHz
1000 MHz
2000 MHz
20
G
ass
(dB)
15
10
5
0
−5
10
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
7 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
MRA651
5
ndbook, halfpage
F
min
(dB)
4
IC = 1.25 mA
5 mA
G
ass
20
G
15
ass
(dB)
3
2
5 mA
1
1.25 mA
0
2
10
VCE=6V.
F
min
3
10
f (MHz)
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
135°
10
pot. unst.
region
0.5
10
5
0
−5
4
90°
1
45°
2
1.0
0.8
0.6
stability
circle
180°
Zo=50Ω.
VCE= 6 V; Ic= 1.25 mA; f = 900 MHz.
0
−135°
0.2
0.2
0.2
0.5 1 5
F = 3 dB
0.5
1
−90°
Fig.12 Noise circle figure.
F
min
F = 1.5 dB
2
F = 2 dB
= 1. 2 dB
Γ
OPT
2
−45°
5
5
MRA652
0.4
0.2
0°
0
1.0
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
8 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
handbook, full pagewidth
Zo=50Ω.
VCE= 6 V; Ic= 1.25 mA; f = 2000 MHz.
stability
circle
180°
pot. unst.
region
135°
0
−135°
0.5
0.2
0.2 0.5 2 5
0.2
0.5
90°
F = 3 dB
F = 4 dB
−90°
1
F = 2.5 dB
1
1
Fig.13 Noise circle figure.
F
min
Γ
OPT
= 1. 9 dB
1.0
45°
2
5
5
2
−45°
MRA653
0.8
0.6
0.4
0.2
0°
0
1.0
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
9 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
handbook, full pagewidth
VCE= 6 V; IC= 5 mA.
Zo=50Ω.
90°
1
180°
135°
0
−135°
0.5
0.2
3 GHz
0.2 0.5 1 2 5
0.2
0.5
1
−90°
2
2
45°
40 MHz
−45°
Fig.14 Common emitter input reflection coefficient (S11).
5
5
MRA646
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
handbook, full pagewidth
VCE= 6 V; IC= 5 mA.
90°
135°
180°
15 12 9 6 3
40 MHz
−135°
3 GHz
−90°
45°
0°
−45°
MRA647
Fig.15 Common emitter forward transmission coefficient (S21).
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
10 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
handbook, full pagewidth
VCE= 6 V; IC= 5 mA.
90°
135°
180°
0.25 0.20 0.15 0.10 0.05
−135°
3 GHz
40 MHz
−90°
45°
0°
−45°
MRA648
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
VCE= 6 V; IC= 5 mA.
Zo=50Ω.
90°
1
180°
135°
0
−135°
0.5
0.2
0.2 0.5 1 2 5
0.2
0.5
1
−90°
3 GHz
45°
2
5
40 MHz
5
2
−45°
MRA649
Fig.17 Common emitter output reflection coefficient (S22).
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
NXP Semiconductors Product specification
Rev. 04 - 22 November 2007
11 of 13
NPN 9 GHz wideband transistors BFG505; BFG505/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
0 1 2 mm
scale
A
A
1
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
1.9
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
e
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
NXP Semiconductors
Rev. 04 - 22 November 2007
12 of 13
Legal information
Data sheet status
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
[1][2]
Product status
Definitions
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internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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changes to information published in this document, including without
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space or life support equipment, nor in applications where failure or
[3]
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Definition
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limitingvalues are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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at
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
NXP Semiconductors
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFG505_X_N_4 20071122 Product data sheet - BFG505_X_3
Modifications:
BFG505_X_3
(9397 750 04348)
BFG505XR_CNV_2 19950901 Product specification - BFG505XR_1
BFG505XR_1 19921101 Product specification - -
• Marking table on page 2; changed code
19981002 Product specification - BFG505XR_CNV_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2007
Document identifier: BFG505_X_N_4
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