NXP BFG480W Schematic [ru]

DATA SH EET
DISCRETE SEMICONDUCTORS
BFG480W
NPN wideband transistor
Product specification Supersedes data of 1998 Jul 09
1998 Oct 21
NXP Semiconductors Product specification
Fig.1 Simplified outline SOT343R.
Marking code: P6.
handbook, halfpage
Top view
MSB842
21
43
NPN wideband transistor BFG480W

FEATURES

High power gainHigh efficiencyLow noise figureHigh transition frequencyEmitter is thermal leadLow feedback capacitanceLinear and non-linear operation.

APPLICATIONS

RF front end with high linearity system demands
(CDMA)
Common emitter class AB driver.

DESCRIPTION

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION
1emitter 2base 3emitter 4 collector
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
f
T
G
max
F noise figure I G
p
C
collector-emitter voltage open base 4.5 V collector current (DC) 80 250 mA total power dissipation Ts 60 C 360 mW transition frequency IC=80mA; VCE= 2 V; f =2 GHz; T maximum gain IC=80mA; VCE= 2 V; f = 2 GHz; T
=8mA; VCE= 2 V; f = 2 GHz; S=
C
power gain Pulsed; class-AB; <1:2; tp=5ms;
= 3.6 V; f = 2 GHz; PL=100mW
V
CE
collector efficiency Pulsed; class-AB; <1:2; tp=5ms;
V
= 3.6 V; f = 2 GHz; PL=100mW
CE
=25C21 GHz
amb
=25C16 dB
amb
opt
1.8 dB
13.5 dB
45 %
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
1998 Oct 21 2
NXP Semiconductors Product specification
Fig.2 Power derating curve.
handbook, halfpage
0 40 80 160
500
0
400
MGR623
Ts (°C)
P
tot
(mW)
120
300
200
100
NPN wideband transistor BFG480W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134 ).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s

THERMAL CHARACTERISTICS

collector-base voltage open emitter 14.5 V collector-emitter voltage open base 4.5 V emitter-base voltage open collector 1V collector current (DC) 250 mA total power dissipation Ts 60 C; note 1; see Fig.2 360 mW storage temperature 65 +150 C operating junction temperature 150 C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 250 K/W
1998 Oct 21 3
NXP Semiconductors Product specification
S
21
2
NPN wideband transistor BFG480W

CHARACTERISTICS

T
=25C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
F noise figure I
P
L1
ITO third order intercept point I
collector-base breakdown volt a ge IC=50A; IE=0 14.5 V collector-emitter breakdown voltage IC=5mA; IB=0 4.5 V emitter-base breakdown voltage IE=100A; IC=0 1 V collector-base leakage current VCE=5V; VBE=0 70 nA DC current gain IC=80mA; VCE= 2 V; see Fig.3 40 60 100 collector capacitance IE=ie=0; VCB=2V; f=1MHz 1.4 pF emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz 2.2 pF feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;
340 fF
see Fig.4
transition frequency IC=80mA; VCE=2V; f=2GHz;
=25C; see Fig.5
T
amb
maximum power gain; note 1 IC=80mA; VCE=2V; f=2GHz;
=25C; seeFigs7and8
T
amb
insertion power gain I
output power at 1 dB gain compression
=80mA; VCE=2V; f=2GHz;
C
T
=25C; see Fig.8
amb
=8mA; VCE= 2 V; f = 900 MHz;
C
=
S
I
C
S
; see Fig.13
opt
=8mA; VCE=2V; f=2GHz;
=
; see Fig.13
opt
Class-AB; <1:2; tp=5ms;
=3.6V; ICQ=1mA; f=2GHz
V
CE
=80mA; VCE=2V; f=2GHz;
C
Z
S=ZSopt
; ZL=Z
Lopt
; note 2
21 GHz
16 dB
12 dB
1.2 dB
1.8 dB
20 dBm
28 dBm
Notes
1. G
2. Z
is the maximum power gain, if K > 1. If K < 1 then G
max
is optimized for noise; ZL is optimized for gain.
S
=MSG; seeFigs6,7and8.
max
1998 Oct 21 4
NXP Semiconductors Product specification
Fig.3 DC current gain as a function of collector
current; typical values.
VCE=2V.
handbook, halfpage
0 50 100 150
100
0
80
MGR624
IC (mA)
h
FE
60
40
20
IC=0; f=1MHz.
Fig.4 F eedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
800
400
600
200
0
15
MGR625
234
VCB (V)
C
re
(fF)
Fig.5 Transition frequency as a function of
collector current; typical values.
f=2GHz; VCE=2V; T
amb
=25C.
handbook, halfpage
30
20
10
0
MGR626
10 10
2
10
3
IC (mA)
f
T
(GHz)
f=900MHz; VCE=2V.
Fig.6 Gain as a function of collector current;
typical values.
handbook, halfpage
0 40 80 160
30
10
0
20
MGR627
120
IC (mA)
gain (dB)
MSG
S
21
G
max
NPN wideband transistor BFG480W
1998 Oct 21 5
NXP Semiconductors Product specification
VCE=2V; f=2 GHz.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0 40 80 160
20
0
16
MGR628
IC (mA)
gain (dB)
120
12
8
4
S
21
G
max
IC=80mA; VCE=2V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
0
10 10
2
10
3
10
4
MGR629
10
20
30
40
gain (dB)
f (MHz)
MSG
S
21
G
max
NPN wideband transistor BFG480W
1998 Oct 21 6
NXP Semiconductors Product specification
Fig.9 Common emitter input reflection coefficient (S11); typical values.
IC=80mA; VCE=2V; Zo=50
handbook, full pagewidth
MGR630
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
45°
90°
135°
40 MHz
3 GHz
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
IC=80mA; VCE=2V.
handbook, full pagewidth
MGR631
25 20 15 10 5
180°
135°
90°
45°
0°
45°
90°
135°
40 MHz
3 GHz
NPN wideband transistor BFG480W
1998 Oct 21 7
NXP Semiconductors Product specification
IC=80mA; VCE=2V.
Fig.11 Common emitter reverse transmission coeffic ient (S12); typical values.
handbook, full pagewidth
MGR632
0.5 0.4 0.3 0.2 0.1
180°
135°
90°
45°
0°
45°
90°
135°
40 MHz
3 GHz
Fig.12 Common emitter output reflection coefficient (S22); typical values.
IC=80mA; VCE=2V; Zo=50
handbook, full pagewidth
MGR633
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
45°
90°
135°
40 MHz
3 GHz
NPN wideband transistor BFG480W
1998 Oct 21 8
NXP Semiconductors Product specification
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE=2V.
handbook, halfpage
02040 80
4
3
1
0
2
MGR634
IC (mA)
F
min
(dB)
60
900 MHz
2 GHz
NPN wideband transistor BFG480W

Noise data

V
= 2 V; typical values.
CE
f
(MHz)
I
C
(mA)
F
min
(dB)
mag
angle
()
900 2 1.1 0.41 96.1 0.21
4 1.1 0.31 106.6 0.14 6 1.2 0.27 118.4 0.12 8 1.2 0.26 131.7 0.10 10 1.3 0.28 143.2 0.10 20 1.6 0.39 166.2 0.07 40 2.0 0.49 176.0 0.07 60 2.3 0.57 179.5 0.07 80 2.9 0.45 177.3 0.18
2000 2 2.4 0.57 171.9 0.09
4 2.0 0.49 178.9 0.08
61.80.46175.7 0.09
81.80.44171.7 0.09 10 1.8 0.43 168.4 0.09 12 1.8 0.44 165.3 0.10 14 1.8 0.44 163.7 0.10 20 1.9 0.46 158.3 0.11 40 2.3 0.52 150.2 0.14 60 2.6 0.56 147.7 0.18 80 2.8 0.60 146.1 0.22
rn

APPLICATION INFORMATION

RF performance at T
MODE OF OPERATION
Pulsed; class-AB; <1:2; t
60 C in a common emitter test circuit (see Figs 18 and 19).
s
f
(GHz)
= 5 ms 2 3.6 1 100 typ. 13.5 typ. 45
p
V
(V)
CE
I
CQ
(mA)
P
L
(mW)
G
(dB)
p
C
(%)
1998 Oct 21 9
NXP Semiconductors Product specification
Fig.14 Power gain and collector efficiency as a
function of load power; typical values.
Pulsed, class-AB operation; <1;2; tp=5ms. f=2GHz; VCE= 2.4 V; ICQ= 1 mA; tuned at PL=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR635
PL (dBm)
G
p
(dB)
G
p
80
60
20
0
40
22
η
C
(%)
η
C
Fig.15 Power gain and collector efficiency as a
function of load power; typical values.
Pulsed, class-AB operation; <1;2; tp=5ms. f=2GHz; VCE= 3.6 V; ICQ= 1 mA; tuned at PL=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR636
PL (dBm)
G
p
(dB)
G
p
80
60
20
0
40
22
η
C
(%)
η
C
Fig.16 Input impedance as function of frequency
(series components); typical values.
VCE=3.6V; ICQ=1mA; PL=100mW; Ts 60 C.
handbook, halfpage
1.8 1.85 1.9 2
10
0
8
MGR637
1.95
6
4
2
Z
i
(Ω)
f (GHz)
r
i
x
i
Fig.17 Load impedance as a function of frequency
(series components); typical values.
VCE=3.6V; ICQ=1mA; PL=100mW; Ts 60 C.
handbook, halfpage
1.8 1.85 1.9 2
30
0
MGR638
1.95
20
10
Z
L
(Ω)
f (GHz)
R
L
X
L
NPN wideband transistor BFG480W
1998 Oct 21 10
NXP Semiconductors Product specification
Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
handbook, full pagewidth
MGM221
V
C
V
S
R1
TR1
L1
L4
L5
C4
C2
DUT
R2
C3
C1
RF input
50 Ω
RF output
50 Ω
L2
L3
C6
R3
C7
C5
NPN wideband transistor BFG480W
List of components used in test circuit (see Figs 18 and 19)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF C2, C4 multilayer ceramic chip capacitor; note 1 2 pF C3, C6 multilayer ceramic chip capacitor, note 1 15 pF C7 multilayer ceramic chip capacitor; note 1 1 nF L1, L4 stripline; note 2 100 18 x 0.2 mm L2 stripline; note 2 50 5x0.8mm L3 stripline; note 2 50 6x0.8mm L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300 R1 metal film resistor 220 ; 0.4 W R2, R3 metal film resistor 10 ; 0.4 W TR1 N PN transistor BC817 9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric ( tan = 0.0019) ; thic kness 0.64 mm, copper cladding = 35 m.
=6.15,
r
1998 Oct 21 11
NXP Semiconductors Product specification
Fig.19 Printed-circuit board and component layout for 2 GHz clas s-AB test circuit in Fig.18.
Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
MBK827
45
35
C4
C6
C7R3
R2
R1
TR1
C5
L3
L4
L5
output
C2
L1
L2
input
C1
C3
DUT
V
C
V
S
NPN wideband transistor BFG480W
1998 Oct 21 12
NXP Semiconductors Product specification
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A
1
L
p
Q
detail X
c
H
E
E
v M
A
AB
0 1 2 mm
scale
X
21
43
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
w M
B
97-05-21 06-03-16
b
p
UNIT
A
1
max
b
p
cD
E
b
1
HEL
p
Qwv
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
0.7
0.5
2.2
1.8
1.35
1.15
e
2.2
2.0
1.3
e
1
0.2y0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
e
1
A
e
y
b
1
NPN wideband transistor BFG480W

PACKAGE OUTLINE

1998 Oct 21 13
NXP Semiconductors Product specification
NPN wideband transistor BFG480W

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product status of device(s) de scribed in this document may have changed sinc e this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
DEFINITIONS Product specification The information and data
provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
DISCLAIMERS Limited warranty and liability Information in this
document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
(1)
PRODUCT STATUS
(2)
DEFINITION
development.
Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication he reof.
Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications wher e failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inc l usion and/or use is at the customer’s own risk.
Applications Applications that ar e described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the ris ks associated with their applications and products.
1998 Oct 21 14
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applicat ions and products using NXP Semiconductors products in or de r to avoid a default of the applications and the prod ucts or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Rec ommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In cas e an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data The Quick reference data is an extract of the product data given in t he Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with auto motive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from cus tom er d esign and use o f the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights .
1998 Oct 21 15
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
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The information presented in this document does not form part of any quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/03/pp16 Date of release: 1998 Oct21
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