NXP BFG480W Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D124

BFG480W

NPN wideband transistor

Product specification
Supersedes data of 1998 Jul 09

1998 Oct 21

NXP Semiconductors Product specification

Fig.1 Simplified outline SOT343R.

Marking code: P6.

handbook, halfpage

Top view

MSB842

21

43

NPN wideband transistor BFG480W

FEATURES

 High power gain
 High efficiency
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance
 Linear and non-linear operation.

APPLICATIONS

 RF front end with high linearity system demands

(CDMA)

 Common emitter class AB driver.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1emitter
2base
3emitter
4 collector

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CEO

I

C

P

tot

f

T

G

max

F noise figure I
G

p



C

collector-emitter voltage open base  4.5 V
collector current (DC) 80 250 mA
total power dissipation Ts 60 C  360 mW
transition frequency IC=80mA; VCE= 2 V; f =2 GHz; T
maximum gain IC=80mA; VCE= 2 V; f = 2 GHz; T

=8mA; VCE= 2 V; f = 2 GHz; S= 

C

power gain Pulsed; class-AB;  <1:2; tp=5ms;

= 3.6 V; f = 2 GHz; PL=100mW

V

CE

collector efficiency Pulsed; class-AB;  <1:2; tp=5ms;

V

= 3.6 V; f = 2 GHz; PL=100mW

CE

=25C21  GHz

amb

=25C16  dB

amb

opt

1.8  dB

13.5  dB

45  %

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

1998 Oct 21 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 40 80 160

500

0

400

MGR623

Ts (°C)

P

tot

(mW)

120

300

200

100

NPN wideband transistor BFG480W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134 ).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter  14.5 V
collector-emitter voltage open base  4.5 V
emitter-base voltage open collector  1V
collector current (DC)  250 mA
total power dissipation Ts 60 C; note 1; see Fig.2  360 mW
storage temperature 65 +150 C
operating junction temperature  150 C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 250 K/W

1998 Oct 21 3

NXP Semiconductors Product specification

S

21

2

NPN wideband transistor BFG480W

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

F noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown volt a ge IC=50A; IE=0 14.5 V
collector-emitter breakdown voltage IC=5mA; IB=0 4.5 V
emitter-base breakdown voltage IE=100A; IC=0 1 V
collector-base leakage current VCE=5V; VBE=0 70 nA
DC current gain IC=80mA; VCE= 2 V; see Fig.3 40 60 100
collector capacitance IE=ie=0; VCB=2V; f=1MHz  1.4  pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz  2.2  pF
feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;

 340  fF

see Fig.4

transition frequency IC=80mA; VCE=2V; f=2GHz;

=25C; see Fig.5

T

amb

maximum power gain; note 1 IC=80mA; VCE=2V; f=2GHz;

=25C; seeFigs7and8

T

amb

insertion power gain I

output power at 1 dB gain
compression

=80mA; VCE=2V; f=2GHz;

C

T

=25C; see Fig.8

amb

=8mA; VCE= 2 V; f = 900 MHz;

C

= 



S

I

C



S

; see Fig.13

opt

=8mA; VCE=2V; f=2GHz;

= 

; see Fig.13

opt

Class-AB;  <1:2; tp=5ms;

=3.6V; ICQ=1mA; f=2GHz

V

CE

=80mA; VCE=2V; f=2GHz;

C

Z

S=ZSopt

; ZL=Z

Lopt

; note 2

 21  GHz

 16  dB

 12  dB

 1.2  dB

 1.8  dB

 20  dBm

 28  dBm

Notes

1. G

2. Z

is the maximum power gain, if K > 1. If K < 1 then G

max

is optimized for noise; ZL is optimized for gain.

S

=MSG; seeFigs6,7and8.

max

1998 Oct 21 4

NXP Semiconductors Product specification

Fig.3 DC current gain as a function of collector

current; typical values.

VCE=2V.

handbook, halfpage

0 50 100 150

100

0

80

MGR624

IC (mA)

h

FE

60

40

20

IC=0; f=1MHz.

Fig.4 F eedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

0

800

400

600

200

0

15

MGR625

234

VCB (V)

C

re

(fF)

Fig.5 Transition frequency as a function of

collector current; typical values.

f=2GHz; VCE=2V; T

amb

=25C.

handbook, halfpage

30

20

10

0

MGR626

10 10

2

10

3

IC (mA)

f

T

(GHz)

f=900MHz; VCE=2V.

Fig.6 Gain as a function of collector current;

typical values.

handbook, halfpage

0 40 80 160

30

10

0

20

MGR627

120

IC (mA)

gain
(dB)

MSG

S

21

G

max

NPN wideband transistor BFG480W

1998 Oct 21 5