NXP BFG480W Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D124

BFG480W

NPN wideband transistor

Product specification
Supersedes data of 1998 Jul 09

1998 Oct 21

NXP Semiconductors Product specification

Fig.1 Simplified outline SOT343R.

Marking code: P6.

handbook, halfpage

Top view

MSB842

21

43

NPN wideband transistor BFG480W

FEATURES

 High power gain
 High efficiency
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance
 Linear and non-linear operation.

APPLICATIONS

 RF front end with high linearity system demands

(CDMA)

 Common emitter class AB driver.

DESCRIPTION

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.

QUICK REFERENCE DATA

PINNING

PIN DESCRIPTION

1emitter
2base
3emitter
4 collector

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CEO

I

C

P

tot

f

T

G

max

F noise figure I
G

p



C

collector-emitter voltage open base  4.5 V
collector current (DC) 80 250 mA
total power dissipation Ts 60 C  360 mW
transition frequency IC=80mA; VCE= 2 V; f =2 GHz; T
maximum gain IC=80mA; VCE= 2 V; f = 2 GHz; T

=8mA; VCE= 2 V; f = 2 GHz; S= 

C

power gain Pulsed; class-AB;  <1:2; tp=5ms;

= 3.6 V; f = 2 GHz; PL=100mW

V

CE

collector efficiency Pulsed; class-AB;  <1:2; tp=5ms;

V

= 3.6 V; f = 2 GHz; PL=100mW

CE

=25C21  GHz

amb

=25C16  dB

amb

opt

1.8  dB

13.5  dB

45  %

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

1998 Oct 21 2

NXP Semiconductors Product specification

Fig.2 Power derating curve.

handbook, halfpage

0 40 80 160

500

0

400

MGR623

Ts (°C)

P

tot

(mW)

120

300

200

100

NPN wideband transistor BFG480W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134 ).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter  14.5 V
collector-emitter voltage open base  4.5 V
emitter-base voltage open collector  1V
collector current (DC)  250 mA
total power dissipation Ts 60 C; note 1; see Fig.2  360 mW
storage temperature 65 +150 C
operating junction temperature  150 C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point 250 K/W

1998 Oct 21 3

NXP Semiconductors Product specification

S

21

2

NPN wideband transistor BFG480W

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

e

C

re

f

T

G

max

F noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown volt a ge IC=50A; IE=0 14.5 V
collector-emitter breakdown voltage IC=5mA; IB=0 4.5 V
emitter-base breakdown voltage IE=100A; IC=0 1 V
collector-base leakage current VCE=5V; VBE=0 70 nA
DC current gain IC=80mA; VCE= 2 V; see Fig.3 40 60 100
collector capacitance IE=ie=0; VCB=2V; f=1MHz  1.4  pF
emitter capacitance IC=ic=0; VEB=0.5V; f=1MHz  2.2  pF
feedback capacitance IC=0; VCB= 2 V; f = 1 MHz;

 340  fF

see Fig.4

transition frequency IC=80mA; VCE=2V; f=2GHz;

=25C; see Fig.5

T

amb

maximum power gain; note 1 IC=80mA; VCE=2V; f=2GHz;

=25C; seeFigs7and8

T

amb

insertion power gain I

output power at 1 dB gain
compression

=80mA; VCE=2V; f=2GHz;

C

T

=25C; see Fig.8

amb

=8mA; VCE= 2 V; f = 900 MHz;

C

= 



S

I

C



S

; see Fig.13

opt

=8mA; VCE=2V; f=2GHz;

= 

; see Fig.13

opt

Class-AB;  <1:2; tp=5ms;

=3.6V; ICQ=1mA; f=2GHz

V

CE

=80mA; VCE=2V; f=2GHz;

C

Z

S=ZSopt

; ZL=Z

Lopt

; note 2

 21  GHz

 16  dB

 12  dB

 1.2  dB

 1.8  dB

 20  dBm

 28  dBm

Notes

1. G

2. Z

is the maximum power gain, if K > 1. If K < 1 then G

max

is optimized for noise; ZL is optimized for gain.

S

=MSG; seeFigs6,7and8.

max

1998 Oct 21 4

NXP Semiconductors Product specification

Fig.3 DC current gain as a function of collector

current; typical values.

VCE=2V.

handbook, halfpage

0 50 100 150

100

0

80

MGR624

IC (mA)

h

FE

60

40

20

IC=0; f=1MHz.

Fig.4 F eedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

0

800

400

600

200

0

15

MGR625

234

VCB (V)

C

re

(fF)

Fig.5 Transition frequency as a function of

collector current; typical values.

f=2GHz; VCE=2V; T

amb

=25C.

handbook, halfpage

30

20

10

0

MGR626

10 10

2

10

3

IC (mA)

f

T

(GHz)

f=900MHz; VCE=2V.

Fig.6 Gain as a function of collector current;

typical values.

handbook, halfpage

0 40 80 160

30

10

0

20

MGR627

120

IC (mA)

gain
(dB)

MSG

S

21

G

max

NPN wideband transistor BFG480W

1998 Oct 21 5

NXP Semiconductors Product specification

VCE=2V; f=2 GHz.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

0 40 80 160

20

0

16

MGR628

IC (mA)

gain
(dB)

120

12

8

4

S

21

G

max

IC=80mA; VCE=2V.

Fig.8 Gain as a function of frequency;

typical values.

handbook, halfpage

50

0

10 10

2

10

3

10

4

MGR629

10

20

30

40

gain
(dB)

f (MHz)

MSG

S

21

G

max

NPN wideband transistor BFG480W

1998 Oct 21 6

NXP Semiconductors Product specification

Fig.9 Common emitter input reflection coefficient (S11); typical values.

IC=80mA; VCE=2V; Zo=50

handbook, full pagewidth

MGR630

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

Fig.10 Common emitter forward transmission coefficient (S21); typical values.

IC=80mA; VCE=2V.

handbook, full pagewidth

MGR631

25 20 15 10 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN wideband transistor BFG480W

1998 Oct 21 7

NXP Semiconductors Product specification

IC=80mA; VCE=2V.

Fig.11 Common emitter reverse transmission coeffic ient (S12); typical values.

handbook, full pagewidth

MGR632

0.5 0.4 0.3 0.2 0.1

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

Fig.12 Common emitter output reflection coefficient (S22); typical values.

IC=80mA; VCE=2V; Zo=50

handbook, full pagewidth

MGR633

0

0.2

0.6

0.4

0.8

1.0

1.0

5

2

1

0.5

0.2

0

0.2

0.5

1

2

5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

NPN wideband transistor BFG480W

1998 Oct 21 8

NXP Semiconductors Product specification

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE=2V.

handbook, halfpage

02040 80

4

3

1

0

2

MGR634

IC (mA)

F

min

(dB)

60

900 MHz

2 GHz

NPN wideband transistor BFG480W

Noise data

V

= 2 V; typical values.

CE

f

(MHz)

I

C

(mA)

F

min

(dB)



mag



angle

()

900 2 1.1 0.41 96.1 0.21

4 1.1 0.31 106.6 0.14
6 1.2 0.27 118.4 0.12
8 1.2 0.26 131.7 0.10
10 1.3 0.28 143.2 0.10
20 1.6 0.39 166.2 0.07
40 2.0 0.49 176.0 0.07
60 2.3 0.57 179.5 0.07
80 2.9 0.45 177.3 0.18

2000 2 2.4 0.57 171.9 0.09

4 2.0 0.49 178.9 0.08

61.80.46175.7 0.09

81.80.44171.7 0.09
10 1.8 0.43 168.4 0.09
12 1.8 0.44 165.3 0.10
14 1.8 0.44 163.7 0.10
20 1.9 0.46 158.3 0.11
40 2.3 0.52 150.2 0.14
60 2.6 0.56 147.7 0.18
80 2.8 0.60 146.1 0.22

rn

APPLICATION INFORMATION

RF performance at T

MODE OF OPERATION

Pulsed; class-AB;  <1:2; t

 60 C in a common emitter test circuit (see Figs 18 and 19).

s

f

(GHz)

= 5 ms 2 3.6 1 100 typ. 13.5 typ. 45

p

V

(V)

CE

I

CQ

(mA)

P

L

(mW)

G

(dB)

p



C

(%)

1998 Oct 21 9

NXP Semiconductors Product specification

Fig.14 Power gain and collector efficiency as a

function of load power; typical values.

Pulsed, class-AB operation;  <1;2; tp=5ms.
f=2GHz; VCE= 2.4 V; ICQ= 1 mA; tuned at PL=100mW.

handbook, halfpage

10 14 18 26

16

12

4

0

8

MGR635

PL (dBm)

G

p

(dB)

G

p

80

60

20

0

40

22

η

C

(%)

η

C

Fig.15 Power gain and collector efficiency as a

function of load power; typical values.

Pulsed, class-AB operation;  <1;2; tp=5ms.
f=2GHz; VCE= 3.6 V; ICQ= 1 mA; tuned at PL=100mW.

handbook, halfpage

10 14 18 26

16

12

4

0

8

MGR636

PL (dBm)

G

p

(dB)

G

p

80

60

20

0

40

22

η

C

(%)

η

C

Fig.16 Input impedance as function of frequency

(series components); typical values.

VCE=3.6V; ICQ=1mA; PL=100mW; Ts 60 C.

handbook, halfpage

1.8 1.85 1.9 2

10

0

8

MGR637

1.95

6

4

2

Z

i

(Ω)

f (GHz)

r

i

x

i

Fig.17 Load impedance as a function of frequency

(series components); typical values.

VCE=3.6V; ICQ=1mA; PL=100mW; Ts 60 C.

handbook, halfpage

1.8 1.85 1.9 2

30

0

MGR638

1.95

20

10

Z

L

(Ω)

f (GHz)

R

L

X

L

NPN wideband transistor BFG480W

1998 Oct 21 10

NXP Semiconductors Product specification

Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.

handbook, full pagewidth

MGM221

V

C

V

S

R1

TR1

L1

L4

L5

C4

C2

DUT

R2

C3

C1

RF input

50 Ω

RF output

50 Ω

L2

L3

C6

R3

C7

C5

NPN wideband transistor BFG480W

List of components used in test circuit (see Figs 18 and 19)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2, C4 multilayer ceramic chip capacitor; note 1 2 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100  18 x 0.2 mm
L2 stripline; note 2 50  5x0.8mm
L3 stripline; note 2 50  6x0.8mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 N PN transistor BC817 9335 895 20215

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
tan  = 0.0019) ; thic kness 0.64 mm, copper cladding = 35 m.

=6.15,

r

1998 Oct 21 11

NXP Semiconductors Product specification

Fig.19 Printed-circuit board and component layout for 2 GHz clas s-AB test circuit in Fig.18.

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

handbook, full pagewidth

MBK827

45

35

C4

C6

C7R3

R2

R1

TR1

C5

L3

L4

L5

output

C2

L1

L2

input

C1

C3

DUT

V

C

V

S

NPN wideband transistor BFG480W

1998 Oct 21 12

NXP Semiconductors Product specification

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT343R

D

A

A

1

L

p

Q

detail X

c

H

E

E

v M

A

AB

0 1 2 mm

scale

X

21

43

Plastic surface-mounted package; reverse pinning; 4 leads SOT343R

w M

B

97-05-21
06-03-16

b

p

UNIT

A

1

max

b

p

cD

E

b

1

HEL

p

Qwv

mm

0.1

1.1

0.8

0.4

0.3

0.25

0.10

0.7

0.5

2.2

1.8

1.35

1.15

e

2.2

2.0

1.3

e

1

0.2y0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.23

0.13

e

1

A

e

y

b

1

NPN wideband transistor BFG480W

PACKAGE OUTLINE

1998 Oct 21 13

NXP Semiconductors Product specification

NPN wideband transistor BFG480W

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or co mpleting a design.

2. The product status of device(s) de scribed in this document may have changed sinc e this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

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reserves the right to make changes to information
published in this document, including without limitation
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inc l usion and/or use is at
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Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

1998 Oct 21 14

NXP Semiconductors Product specification

NPN wideband transistor BFG480W

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
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or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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specifications, and (b) whenever customer uses the
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Semiconductors’ specifications such use shall be solely at
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the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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1998 Oct 21 15

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R77/03/pp16 Date of release: 1998 Oct21