DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors Product data sheet
PNP general purpose transistors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
complements: BC846W, BC847W and BC848W.
NPN
MARKING
T YPE NUMBER MARKING CODE
BC856W 3D*
BC856AW 3A*
BC856BW 3B*
BC857W 3H*
BC857AW 3E*
BC857BW 3F*
BC857CW 3G*
BC858W 3M*
(1)
BC856W; BC857W;
BC858W
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Fig.1 Simplified outline (SOT323; SC70) and
symbol.
3
1
1
2
MAM048
3
2
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BC856W − −80 V
BC857W − −50 V
BC858W − −30 V
collector-emitter voltage open base
BC856W − −65 V
BC857W − −45 V
BC858W − −30 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 625 K/W
ambient
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure IC = −200 μA; VCE = −5 V;
collector-base cut-off curren t VCB = −30 V; IE = 0 − −1 −15 nA
VCB = −30 V; IE = 0;
= 150 °C
T
j
− − −4 μA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
DC current gain IC = −2 mA; VCE = −5 V
BC856W 125 − 475
BC857W; BC858W 125 − 800
BC856AW; BC857AW 125 − 250
BC856BW; BC857BW 220 − 475
BC857CW 420 − 800
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV
IC = −100 mA; IB = −5 mA;
1
note
− −250 −600 mV
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −700 − mV
IC = −100 mA; IB = −5 mA;
note
1
− −850 − mV
base-emitter voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV
IC = −10 mA; VCE = −5 V − − −820 mV
collector capacitance VCB = −10 V; IE = Ie = 0;
f
= 1 MHz
emitter capacitance VEB = −0.5 V; IC = Ic = 0;
= 1 MHz
f
transition frequency VCE = −5 V; IC = −10 mA;
f
= 100 MHz
− − 3 pF
− − 12 pF
100 − − MHz
− − 10 dB
= 2 kΩ; f = 1 kHz;
R
S
= 200 Hz
B
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Feb 04 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
500
handbook, halfpage
h
FE
MGT711
400
(1)
300
200
100
0
−10−2−10
−1
(2)
(3)
−1 −10 −102−10
IC (mA)
BC857AW; VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT712
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 − 102−10
3
IC (mA)
BC857AW; VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)(3)
−1 −10 −10
MGT713
2
IC (mA)
BC857AW; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
−1000
−800
−600
(1)
(2)
(3)
MGT714
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857AW; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04 5
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
1000
handbook, halfpage
h
FE
MGT715
800
600
(1)
400
(2)
200
0
−10−2−10
−1
(3)
−1 −10 −102−10
IC (mA)
BC857BW; VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT716
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 − 102−10
3
IC (mA)
BC857BW; VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(3)
(2)
−1 −10 −10
MGT717
2
IC (mA)
BC857BW; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MGT718
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857BW; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04 6
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
1000
handbook, halfpage
h
FE
(1)
MGT719
800
600
(2)
400
(3)
200
0
−10−2−10
−1
−1 −10 −102−10
IC (mA)
BC857CW; VCE = −5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.10 DC curre nt gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT720
−1000
−800
(1)
(2)
−600
−400
(3)
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857CW; VCE = −5 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)
(3)
−1 −10 −10
MGT721
2
IC (mA)
BC857CW; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MGT722
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857CW; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.13 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
2002 Feb 04 7
NXP Semiconductors Product data sheet
3
PNP general purpose transistors BC856W; BC857W; BC858W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
c
L
p
X
v M
A
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.3
0.10
IEC JEDEC EIAJ
2.2
1.8
E
1.35
1.15
REFERENCES
1.3
e1H
e
0.65
2.2
2.0
L
Qwv
p
E
0.45
0.15
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
2002 Feb 04 8
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective s pecification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2002 Feb 04 9
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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The information presented in this documen t d oes not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Document order number: 9397 750 09168
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