How it Works
NXP
Loading...
BC856
Schematic [ru]
10 pgs161.9 Kb0

NXP BC856, BC856A, BC856B, BC857, BC857A Schematic [ru]

...
Download
DATA SH EET
DISCRETE SEMICONDUCTORS
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858

FEATURES

• Low current (max. 100 mA)
• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.
complements: BC846, BC847 and BC848.
NPN

MARKING

T YPE NUMBER MARKING CODE
BC856 3D* BC856A 3A* BC856B 3B* BC857 3H* BC857A 3E* BC857B 3F* BC857C 3G* BC858B 3K*
(1)

PINNING

PIN DESCRIPTION
1 base 2 emitter 3 collector
handbook, halfpage
Top view
3
21
3
1
2
MAM256
Note
1. * = p: made in Hong Kong. * = t: made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
* = W: made in China.

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BC856 − plastic surface mounted package; 3 leads SOT23 BC857 − plastic surface mounted package; 3 leads SOT23 BC858 − plastic surface mounted package; 3 leads SOT23
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V I I I P T T T
CBO
CEO
EBO C CM BM
tot
stg
j
amb
collector-base voltage open emitter
BC856 − −80 V BC857 − −50 V BC858 − −30 V
collector-emitter voltage open base
BC856 − −65 V BC857 − −45 V
BC858 − −30 V emitter-base voltage open collector − −5 V collector current (DC) − −100 mA peak collector current − −200 mA peak base current − −200 mA total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C junction temperature − 150 °C operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
R
th(j-a)
thermal resistance from junction to
in free air; note 1 500 K/W
ambient
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure IC = −200 μA; VCE = −5 V;
collector-base cut-off curren t VCB = −30 V; IE = 0 − −1 −15 nA
VCB = −30 V; IE = 0;
= 150 °C
T
j
− − −4 μA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA DC current gain IC = −2 mA; VCE = −5 V
BC856 125 − 475
BC857 125 − 800
BC856A; BC857A 125 − 250
BC856B; BC857B; BC858B 220 − 475
BC857C 420 − 800 collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV
IC = −100 mA; IB = −5 mA;
1
note
− −250 −650 mV
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −700 − mV
IC = −100 mA; IB = −5 mA; note
1
− −850 − mV
base-emitter voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV
IC = −10 mA; VCE = −5 V − − −820 mV
collector capacitance VCB = −10 V; IE = Ie = 0;
f
= 1 MHz
transition frequency VCE = −5 V; IC = −10 mA;
= 100 MHz
f
− 4.5 − pF
100 − − MHz
− 2 10 dB
R
= 2 kΩ; f = 1 kHz;
S
= 200 Hz
B
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
500
handbook, halfpage
h
FE
MGT711
400
(1)
300
200
100
0
−10−2−10
−1
(2)
(3)
−1 −10 −102−10 IC (mA)
BC857A; VCE = −5 V. (1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT712
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 −102−10
3
IC (mA)
BC857A; VCE = −5 V. (1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)(3)
−1 −10 −10
MGT713
2
IC (mA)
BC857A; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
−1000
−800
−600
(1)
(2)
(3)
MGT714
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857A; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
1000
handbook, halfpage
h
FE
MGT715
800
600
(1)
400
(2)
200
0
−10−2−10
−1
(3)
−1 −10 −102−10 IC (mA)
BC857B; VCE = −5 V. (1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT716
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 −102−10
3
IC (mA)
BC857B; VCE = −5 V. (1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(3)
(2)
−1 −10 −10
MGT717
2
IC (mA)
BC857B; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat (mV)
MGT718
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857B; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858
1000
handbook, halfpage
h
FE
(1)
MGT719
800
600
(2)
400
(3)
200
0
−10−2−10
−1
−1 −10 −102−10
IC (mA)
BC857C; VCE = −5 V. (1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.10 DC curre nt gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT720
−1000
−800
(1)
(2)
−600
−400
(3)
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857C; VCE = −5 V. (1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)
(3)
−1 −10 −10
MGT721
2
IC (mA)
BC857C; IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat (mV)
MGT722
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857C; IC/IB = 20.
= −55 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.13 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
NXP Semiconductors Product data sheet
3
PNP general purpose transistors BC856; BC857; BC858

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04 06-03-16
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856; BC857; BC858

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC
60134) may cause permanent damage to
Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property righ ts.
Printed in The Netherlands R75/06/pp10 Date of release: 2004 Jan 16 Document order number: 9397 750 12397
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use