NXP BC848B, BC848W Schematic [ru]
BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package PNP
BC848B SOT23 - TO-236AB BC858B
BC848W SOT323 SC-70 - BC858W
1.2 Features
NXP JEITA JEDEC
complement
General-purpose transistors
SMD plastic packages
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
h
CEO
C
FE
collector-emitter voltage open base - - 30 V
collector current - - 100 mA
DC current gain VCE=5V;
=2mA
I
C
BC848B 200 290 450
BC848W 110 - 800
NXP Semiconductors
4
1
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
1base
2emitter
3 collector
BC848 series
30 V, 100 mA NPN general-purpose transist ors
3
3
1
3. Ordering information
Table 4. Ordering information
Type number Package
BC848B - plastic surface mounted package; 3 leads SOT23
BC848W SC-70 plastic surface mounted package; 3 leads SOT323
4. Marking
Table 5. Marking codes
Type number Marking code
BC848B 1K*
BC848W 1M*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
12
006aaa14
2
sym02
Name Description Version
[1]
BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 2 of 12
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BC848 series
30 V, 100 mA NPN general-purpose transist ors
collector-base voltage open emitter - 30 V
collector-emitter voltage open base - 30 V
emitter-base voltage open collector - 5 V
collector current - 100 mA
peak collector current single pulse;
≤ 1ms
t
p
peak base current single pulse;
≤ 1ms
t
p
total power dissipation T
amb
≤ 25 °C
SOT23 - 250 mW
SOT323 - 200 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
-200mA
-200mA
[1]
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
thermal resistance from
junction to ambient
SOT23 - - 500 K/W
SOT323 - - 625 K/W
in free air
[1]
BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 3 of 12
NXP Semiconductors
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
NF noise figure V
BC848 series
30 V, 100 mA NPN general-purpose transist ors
=25°C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE=5V; IC=10μA-150-
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage IC=2mA; VCE=5V
transition frequency VCE=5V; IC=10mA;
collector capacitance VCB=10V; IE=ie=0A;
VCB=30V; IE=0A - - 15 nA
=30V; IE=0A;
V
CB
= 150 °C
T
j
--5μA
VEB=5V; IE= 0 A - - 100 nA
=5V; IC=2mA
V
CE
BC848B 200 290 450
BC848W 11 0 - 800
IC=10mA; IB= 0.5 mA - 90 250 mV
= 100 mA; IB=5mA
I
C
IC=10mA; IB=0.5mA
= 100 mA; IB=5mA
I
C
=10mA; VCE=5V
I
C
[1]
- 200 600 mV
[2]
-700-mV
[2]
-900-mV
[3]
580 660 700 mV
[3]
- - 770 mV
100 - - MHz
f = 100 MHz
-2.53pF
f=1MHz
=5V; IC=200μA;
CE
- 2 10 dB
RS=2kΩ; f = 1 kHz;
B=200Hz
[1] Pulse test: tp≤ 300 μs; δ≤0.02.
[2] V
[3] V
BC848_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 4 of 12
decreases by approximately 1.7 mV/K with increasing temperature.
BEsat
decreases by approximately 2 mV/K with increasing temperature.
BE
Loading...