NXP 74AHC1G00GV, 74AHC1G00GW, 74AHCT1G00GV, 74AHCT1G00GW Schematic [ru]

74AHC1G00; 74AHCT1G00

2-input NAND gate

Rev. 06 — 30 May 2007 Product data sheet

1. General description

74AHC1G00 and 74AHCT1G00 are high-speed Si-gate CMOS devices. They provide a
2-input NAND function.

The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

2. Features

n Symmetrical output impedance
n High noise immunity
n Low power dissipation
n Balanced propagation delays
n SOT353-1 and SOT753 package options
n ESD protection:

u HBM JESD22-A114E: exceeds 2000 V
u MM JESD22-A115-A: exceeds 200 V
u CDM JESD22-C101C: exceeds 1000 V

n Specified from −40 °C to +125 °C

3. Ordering information

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

74AHC1G00GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package;
74AHCT1G00GW
74AHC1G00GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753
74AHCT1G00GV

5 leads; body width 1.25 mm

SOT353-1

NXP Semiconductors

74AHC1G00; 74AHCT1G00

4. Marking

Table 2. Marking codes

Type number Marking

74AHC1G00GW AA
74AHC1G00GV A00
74AHCT1G00GW CA
74AHCT1G00GV C00

5. Functional diagram

2-input NAND gate

1

B

2

A

mna097

4

Y

1
2

&

mna098

4

B

A

Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram

6. Pinning information

6.1 Pinning

74AHC1G00

74AHCT1G00

Fig 4. Pin configuration

1

BV

2

A

3

GND Y

001aaf092

5

CC

4

Y

mna099

6.2 Pin description

Table 3. Pin description

Symbol Pin Description

B 1 data input
A 2 data input
GND 3 ground (0 V)
Y 4 data output
V

CC

74AHC_AHCT1G00_6 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 06 — 30 May 2007 2 of 11

5 supply voltage

NXP Semiconductors

74AHC1G00; 74AHCT1G00

2-input NAND gate

7. Functional description

Table 4. Function table

H = HIGH voltage level; L = LOW voltage level

Inputs Output
A B Y

LLH
LHH
HLH
HHL

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V
V
I

IK

I

OK

I

O

I

CC

I

GND

T
P

CC
I

stg
tot

supply voltage −0.5 +7.0 V
input voltage −0.5 +7.0 V
input clamping current VI < −0.5 V −20 - mA
output clamping current VO < −0.5 V or VO>VCC+ 0.5 V

[1]

- ±20 mA
output current −0.5 V < VO <VCC+ 0.5 V - ±25 mA
supply current - 75 mA
ground current −75 - mA
storage temperature −65 +150 °C
total power dissipation T

= −40 °C to +125 °C

amb

[2]

- 250 mW

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of P

derates linearly with 4.0 mW/K.

tot

9. Recommended operating conditions

Table 6. Recommended operating conditions

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 74AHC1G00 74AHCT1G00 Unit

Min Typ Max Min Typ Max

V

CC

V

I

V

O

T

amb

∆t/∆V input transition rise

74AHC_AHCT1G00_6 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 06 — 30 May 2007 3 of 11

supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
input voltage 0 - 5.5 0 - 5.5 V
output voltage 0 - V

CC

0-VCCV

ambient temperature −40 +25 +125 −40 +25 +125 °C

= 3.3 V ± 0.3 V - - 100 - - - ns/V

V

and fall rate

CC

= 5.0 V ± 0.5 V - - 20 - - 20 ns/V

V

CC

NXP Semiconductors

74AHC1G00; 74AHCT1G00

2-input NAND gate

10. Static characteristics

Table 7. Static characteristics

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max Min Max

For type 74AHC1G00

V

IH

HIGH-level
input voltage

V

IL

LOW-level
input voltage

V

OH

HIGH-level
output voltage

V

OL

LOW-level
output voltage

I

I

input leakage
current

I

CC

C

I

supply current VI=VCCor GND; IO = 0 A;

input
capacitance

For type 74AHCT1G00

V

IH

HIGH-level
input voltage

V

IL

LOW-level
input voltage

V

OH

HIGH-level
output voltage

V

OL

LOW-level
output voltage

I

I

input leakage
current

VCC= 2.0 V 1.5 - - 1.5 - 1.5 - V

= 3.0 V 2.1 - - 2.1 - 2.1 - V

V

CC

= 5.5 V 3.85 - - 3.85 - 3.85 - V

V

CC

VCC= 2.0 V - - 0.5 - 0.5 - 0.5 V

= 3.0 V - - 0.9 - 0.9 - 0.9 V

V

CC

= 5.5 V - - 1.65 - 1.65 - 1.65 V

V

CC

VI= VIH or V

IL

IO= −50 µA; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V

= −50 µA; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V

I

O

= −50 µA; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V

I

O

= −4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V

I

O

= −8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V

I

O

VI= VIH or V

IL

IO= 50 µA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V

= 50 µA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V

I

O

= 50 µA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V

I

O

= 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V

I

O

= 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V

I

O

VI= 5.5 V or GND;
V

= 0 V to 5.5 V

CC

- - 0.1 - 1.0 - 2.0 µA

- - 1.0 - 10 - 40 µA

V

= 5.5 V

CC

- 1.5 10 - 10 - 10 pF

VCC= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V

VCC= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V

VI= VIH or VIL; VCC= 4.5 V

= −50 µA 4.4 4.5 - 4.4 - 4.4 - V

I

O

= −8.0 mA 3.94 - - 3.8 - 3.70 - V

I

O

VI= VIH or VIL; VCC= 4.5 V

= 50 µA - 0 0.1 - 0.1 - 0.1 V

I

O

= 8.0 mA - - 0.36 - 0.44 - 0.55 V

I

O

VI= 5.5 V or GND;
V

= 0 V to 5.5 V

CC

- - 0.1 - 1.0 - 2.0 µA

74AHC_AHCT1G00_6 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 06 — 30 May 2007 4 of 11